Abstract: A method of driving an electrophoretic display apparatus, wherein during displaying an image on the display unit, executing a pixel electrode pulse driving in which a pulse periodically alternating between first and second potentials is input to the pixel electrode corresponding to the pixel of which a display state is changed, the first or second potential is input to the pixel electrode corresponding to the pixel of which a display state is not to be changed, and a potential equal to that of the pixel electrode corresponding to the pixel of which a display state is not to be changed is input to the common electrode.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N1, a p-type electrode P1, and a passivation film F1. The second ESD layer has pits X having a mean pit diameter D. The mean pit diameter D is 500 ? to 3,000 ?. An InGaN layer included in the n-side superlattice layer has a thickness Y satisfying the following condition: ?0.029×D+82.8?Y??0.029×D+102.8.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process and the latter process where the supply amount of the Mg dopant gas is different. The supply amount of the Mg dopant gas in the latter process is half or less than that in the former process. The thickness of a first p-cladding layer formed in the former process is 60% or less than that of the p-cladding layer, and 160 ? or less.

Abstract: A control method of an electro-optical device includes: performing a first supply process for supplying an electric potential corresponding to the changed gray level to a pixel electrode of a first pixel; performing a second supply process for supplying the same electric potential as an electric potential of a counter electrode to a pixel electrode of a second pixel; extracting a contour image from a difference between an image before the image rewriting and an image after the image rewriting; determining whether or not the first supply process is being performed, in units of a pixel, for contour display pixels that display the contour image; and performing a contour elimination process for supplying an electric potential for eliminating the contour image to the pixel electrode of a pixel, for which it is determined that the first supply process is not being performed, among the contour display pixels.

Abstract: In a refresh period, a voltage for alternatingly inverting a memory display element between a first gray level and a second gray level is applied. The number of inversions in the refresh period when the temperature of the memory display element is low is lower than the number of inversions in the refresh period when the temperature of the memory display element is high.

Abstract: An adjustment phase, a clearing phase, and a gray level control phase are used when changing the gray levels of pixels. A plurality of pixels are aligned to a predetermined gray level in the adjustment phase. In the adjustment phase, the gray level of a pixel is changed earlier the greater a gray level difference between the gray level of the pixel and the predetermined gray level is.

Abstract: In order to achieve a desired gray level in an optical state of a bi-stable display element, voltage application is carried out so that the gray level follows a predetermined gray level change loop through a erasing period, a reset period, and a write period.

Abstract: A ferritic Cr-contained steel having a reduced thermal expansion coefficient is provided. The ferritic Cr-contained steel contains C of 0.03% or less, Mn of 5.0% or less, Cr of 6 to 40%, N of 0.03% or less, Si of 5% or less, and W of 2.0% to 6.0% in percent by mass, and Fe and inevitable impurities as the remainder, wherein precipitated W is 0.1% or less in percent by mass, and an average thermal expansion coefficient between 20° C. and 800° C. is less than 12.6×10-6/° C.

Abstract: An electrophoretic display device driving method includes: applying a first voltage between a first electrode and a common electrode to display a highest or lowest gray scale at a first pixel, subsequently applying a second voltage between a second electrode and the common electrode to display an intermediate gray scale at a second pixel, and subsequently applying a third voltage between a third electrode and the common electrode to display the other of the highest and lowest gray scale at a third pixel; then, with each electrode in a high-impedance state, applying a first auxiliary voltage between one of the first and third electrodes and the common electrode; and thereafter, applying a second auxiliary voltage between the other of the first and third electrode and the common electrode, the second electrode is in the high-impedance state while the auxiliary voltages are applied to the first and third electrodes.

Abstract: An electrophoresis display device includes electrophoresis display elements, corresponding to pixels of a display unit, each having a structure where a dispersion medium containing electrophoresis particles is interposed between a common electrode and a pixel electrode, a driving unit that applies a voltage between the common electrode and the pixel electrodes and drives the electrophoresis display elements, and a control unit that controls the driving unit. An image rewrite period, during which a rewrite display operation is performed on the electrophoresis display elements, includes a reset period and an image signal introducing period. During the image signal introducing period, the electrophoresis display elements are driven with a first data input pulse and a second data input pulse.

Abstract: On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 ? to 100 ? is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N1, a p-type electrode P1, and a passivation film F1. The second ESD layer has pits X having a mean pit diameter D. The mean pit diameter D is 500 ? to 3,000 ?. An InGaN layer included in the n-side superlattice layer has a thickness Y satisfying the following condition: ?0.029×D+82.8?Y??0.029×D+102.8.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process and the latter process where the supply amount of the Mg dopant gas is different. The supply amount of the Mg dopant gas in the latter process is half or less than that in the former process. The thickness of a first p-cladding layer formed in the former process is 60% or less than that of the p-cladding layer, and 160 ? or less.

Abstract: An exemplary content providing system includes a server in which a learning management system is established using teaching material data and a client terminal which downloads the teaching material data from the server and presents the data. The teaching material data includes teaching material management data and content data, which are associated with each other. The client terminal includes a processor which downloads the content data from the server at a predetermined time, and a storage device which stores the content data that has been downloaded. The processor downloads management data, which is associated with the content data downloaded, at or after the predetermined time, and combines the management data and the content data together according to the association between the management data and the content data, thereby generating teaching material data to present.

Abstract: A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InyGa1-yN (0<y<1) layer, an AlxGa1-xN (0<x<1) layer, and a GaN layer. The n-type-layer-side cladding layer has a four-layer periodic structure including a second GaN layer interposed between the InyGa1-yN (0<y<1) layer and the AlxGa1-xN (0<x<1) layer.

Abstract: A device includes: first and second substrates; an electrophoretic element between the substrates and including a dispersion medium containing electrophoretic particles; pixel electrodes on the first substrate; a common electrode opposite the pixel electrodes on the second substrate; a unit supplying an image signal having a first or second potential<the first potential to the pixel electrodes according to image data; and another unit supplying a common potential to the common electrode. The image signal is supplied in predetermined frame periods in an image signal supply period according to image data associated with the same frame image as the image data. The common potential is switched into a third potential?the first potential and>the second potential and a fourth potential<the third potential and?the second potential, and the switched potentials are supplied to the common electrode in the frame periods.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800° C. to 950° C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage.

Abstract: There is provided a method for driving an electrophoresis display device equipped with a plurality of pixel electrodes, each of the pixel electrode being provided for every pixel, a common electrode provided to oppose the plurality of pixel electrodes, and an electrophoresis element containing electrophoresis particles, the electrophoresis element being sandwiched by the plurality of pixel electrodes and the common electrode. The method includes driving the electrophoresis element and updating a display by a common voltage swing drive method in which a rectangular wave in which a first potential and a second potential are repeated is applied to the common electrode for not less than one cycle during a display update time in which the first potential or the second potential for moving the electrophoresis particles is applied to each of the pixel electrodes. A frequency of the rectangular wave is not less than 20 Hz.

Abstract: On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 ? to 100 ? is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.

Abstract: The soft Cr-containing steel includes, on a % by mass basis, C: from about 0.001% to about 0.020%, Si: more than about 0.10% and less than about 0.50%, Mn: less than about 2.00%, P: less than about 0.060%, S: less than about 0.008%, Cr: from about 12.0% to about 16.0%, Ni: from about 0.05% to about 1.00%, N: less than about 0.020%, Nb: from about 10×(C+N) to about 1.00%, Mo: more than about 0.80% and less than about 3.00%, wherein the contents of alloying elements, represented by Si and Mo, respectively, on a % by mass, satisfy the formula Si?1.2-0.4 Mo, so as to prevent precipitation of the Laves phase and to stably secure an effect of increasing high-temperature strength due to solid solution Mo.