Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 ?m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

Abstract: To provide a sensor mounting structure which enables mounting an automotive sensor directly to the wall section of a part to be detected, without using screws, and also mounting a pressure detector directly to a pressure air passage without using a pressure inlet pipe. The non-circular sensor mounting hole is provided for inserting a part of the sensor housing into the wall section of the part to be detected. In the sensor housing the first locking portion (pawl) and the second locking portion (flange) are integrally formed by molding. The housing 1 is allowed to be inserted into the mounting hole under the condition that the pawl is directed to a specific orientation, and, after insertion, is turned through a specific angle. Therefore the pawl is engaged on the inside surface of the wall section. The flange is engaged on the outside surface of the wall section. The pawl and the flange are designed to hold the wall section of the part to be detected, thereby mounting the sensor.

Abstract: To provide a sensor mounting structure which enables mounting an automotive sensor directly to the wall section of a part to be detected, without using screws, and also mounting a pressure detector directly to a pressure air passage without using a pressure inlet pipe. The non-circular sensor mounting hole is provided for inserting a part of the sensor housing into the wall section of the part to be detected. In the sensor housing the first locking portion (pawl) and the second locking portion (flange) are integrally formed by molding. The housing 1 is allowed to be inserted into the mounting hole under the condition that the pawl is directed to a specific orientation, and, after insertion, is turned through a specific angle. Therefore the pawl is engaged on the inside surface of the wall section. The flange is engaged on the outside surface of the wall section. The pawl and the flange are designed to hold the wall section of the part to be detected, thereby mounting the sensor.

Abstract: An endoscope in accordance with the present invention comprises an inserting unit main body, and a head unit that is freely detachably attached to the distal end of the inserting unit main body and that includes an image pickup device which picks up an image of an object and a light emitting element which irradiates illumination light to the object.

Abstract: The soft Cr-containing steel includes, on a % by mass basis, C: from about 0.001% to about 0.020%, Si: more than about 0.10% and less than about 0.50%, Mn: less than about 2.00%, P: less than about 0.060%, S: less than about 0.008%, Cr: from about 12.0% to about 16.0%, Ni: from about 0.05% to about 1.00%, N: less than about 0.020%, Nb: from about 10×(C+N) to about 1.00%, Mo: more than about 0.80% and less than about 3.00%, wherein the contents of alloying elements, represented by Si and Mo, respectively, on a % by mass, satisfy the formula Si≦1.2−0.4Mo, so as to prevent precipitation of the Laves phase and to stably secure an effect of increasing high-temperature strength due to solid solution Mo.

Abstract: A plasma process apparatus for performing a plasma process on a target substrate 4 includes a process chamber 5 in which the target substrate 4 is installed, a gas inlet 6 for introducing a gas into the process chamber 5, and a plasma discharge production section 15 provided in the process chamber 5. The plasma discharge production section 15 includes a first electrode 2a and a second electrode 2b that is closer to the target substrate 4 than the first electrode 2a is. Only surfaces of the first electrode 2a and the second electrode 2b which can be seen in the normal line direction of the target substrate 4 function as plasma discharge surfaces. Thus, a high quality film is realized even at a low target substrate temperature, and the film formation is performed with high gas dissociation efficiency.

Abstract: The soft Cr-containing steel includes, on a % by mass basis, C: from about 0.001% to about 0.020%, Si: more than about 0.10% and less than about 0.50%, Mn: less than about 2.00%, P: less than about 0.060%, S: less than about 0.008%, Cr: from about 12.0% to about 16.0%, Ni: from about 0.05% to about 1.00%, N: less than about 0.020%, Nb: from about 10×(C+N) to about 1.00%, Mo: more than about 0.80% and less than about 3.00%, wherein the contents of alloying elements, represented by Si and Mo, respectively, on a % by mass, satisfy the formula Si ≦1.2−0.4 Mo, so as to prevent precipitation of the Laves phase and to stably secure an effect of increasing high-temperature strength due to solid solution Mo.

Abstract: The present invention provides a martensitic stainless steel sheet which is hard to be softened by tempering caused by heating during the use of a disk brake, can maintain the predetermined hardness, and has excellent punching workability, bending workability before quenching, and a particularly small shear drop, and in which a predetermined hardness after quenching is constantly achieved, in a low carbon martensitic stainless steel sheet used only after quenching. Specifically, the sheet contains, on the basis of mass percent, 0.030% to 0.100% C; 0.50% or less of Si; 1.00% to 2.50% Mn; more than 10.00% to 15.00% Cr; at least one selected from the group consisting-of 0.01% to 0.50% Ti, 0.01% to 0.50% V, 0.01% to 1.00% Nb, and 0.01% to 1.00% Zr; N in an amount defined by the following expression, N: 0.005% to (Ti+V)×{fraction (14/50)}+(Nb+Zr)×{fraction (14/90)}; and the balance being Fe and incidental impurities. The sheet further contains, on the basis of mass percent, more than 0.

Abstract: A ferritic stainless steel sheet for fuel tanks and fuel pipes comprises, by mass percent, about 0.1% or less of C; about 1.0% or less of Si; about 1.5% or less of Mn; about 0.06% or less of P; about 0.03% or less of S; about 1.0% or less of Al; about 11% to about 20% Cr; about 2.0% or less of Ni; about 0.5% to about 3.0% Mo; about 0.02% to about 1.0% V; about 0.04% or less of N; at least one of about 0.01% to about 0.8% Nb and about 0.01% to about 1.0% Ti; and the balance being Fe and incidental impurities. The ferritic stainless steel sheet is produced by rough-rolling a slab having the above composition; hot-rolling the rough-rolled sheet under a linear pressure of at least about 3.5 MN/m at a final pass in the finish rolling; cold-rolling the hot-rolled sheet at a gross reduction rate of at least about 75%; and annealing the cold-rolled sheet. The cold-rolling step includes one rolling stage or at least two rolling stages including intermediate annealing.

Abstract: The invention is intended to provide a small and highly reliable pressure sensor, which has a smaller number of components and can be produced by using a mold for resin molding in common. A sensor unit (11) is molded with resin. and includes a semiconductor chip (1) for converting the change in pressure of a medium introduced through an introduction hole for measurement into an electric signal. A lead member (12) has one end exposed in a connector (23) and is electrically connected to the semiconductor chip (1) in the sensor unit (11) beforehand. Pressure is applied to the semiconductor chip (1) through a pipe (22). An outer case (21) is integrally formed of synthetic resin by insert molding of the sensor unit (11), the lead member (12) and the pipe (22).

Abstract: An S/N ratio of an output of a semiconductor pressure sensor is improved, the sensor being of an electrostatic capacitance type pressure sensor for generating an output based upon a ratio between capacitances of a pressure sensitive capacitance element and a reference capacitance element. This semiconductor pressure sensor has: a pressure sensitive capacitance element having an electrostatic capacitance Cs changing with a pressure to be detected; a reference capacitance element having an electrostatic capacitance Cr not changing with the pressure; and a unit for detecting the pressure by outputting a signal corresponding to a ratio between the capacitances Cs and Cr, wherein an initial value Cr0 of the capacitance Cr and an initial value Cs0 of the capacitance Cs are defined by 1.2<Cr0/Cs0<1.8. The Cr0/Cs0 ratio is adjusted by changing the electrode area or the like of both the elements.

Abstract: A power control device for controlling a power of a light source of an optical beam directed to an optical medium. The power control device includes a reflected light detector for detecting reflected light from the optical medium when irradiated by an optical beam which is following a track; an arithmetic unit for calculating from the reflected light a transmissivity of light transmitted from a disk surface to a recording layer or an amount of directed light on the recording layer of the medium; and power control means for controlling the power of the light source for emission based on a calculation result produced by the arithmetic unit.

Abstract: The present invention provides a pressure detector capable of easily responding to changes in specification. The pressure detector has a sensor unit for detecting pressure and electronic parts for reducing electrical disturbance which are electrically joined to an exposed part of lead material of an opening of an external case. Thermoset resin is injected and set in the opening to obtain fixed members. An external electronic part for compensating for transient voltage resistance and electromagnetic failure resistance of a single one-chip semiconductor sensor can be mounted, and cost can be reduced by miniaturization, light weight, and reduction in man-hours required for assembly.

Abstract: The present invention provides a pressure detector capable of easily responding to changes in the specification. The pressure detector that the sensor unit 11 for detecting pressure and the electronic parts 35 and 36 for reducing electrical disturbance are electrically joined to the exposed part 24 of the lead material of the opening 28 of the external case 28 and the thermoset resin 38 is injected and set in the opening, thus the members are fixed can be obtained. An external electronic part for compensating for the transient voltage resistance and electromagnetic failure resistance of a single one-chip semiconductor sensor can be mounted and the cost can be reduced by miniaturization, lightweight, and reduction in the assembly man-hour.

Abstract: A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.

Abstract: A circuit for protecting a load from an overvoltage can be integrated together with the load on the same chip by an MOS transistor manufacture process. This overvoltage protecting circuit is composed of a surge protection circuit, an overvoltage detecting circuit and a switching circuit. The surge protection circuit including two MOS transistors operates so that a surge voltage applied to a power supply receiving terminal is clamped by virtue of the source-drain breakdown voltage of the two MOS transistors, thereby absorbing the surge energy. The overvoltage detecting circuit including two MOS transistors operates so that a DC voltage supplied from the surge protection circuit is monitored with the source-drain voltage of the two MOS transistors taken as a reference voltage, thereby detecting an overvoltage. An overvoltage detection output brings an MOS transistor of the switching circuit into a turned-off condition to protect the load.

Abstract: A sensor device is provided which included a digital arithmetic processing unit which performs arithmetic processing through a program stored therein in advance, a pulse generator for generating pulses through the program, and a unit for causing the output voltage of the sensor device to stay at either a power source voltage concerned or the ground voltage, when the pulses from the pulse generator are interrupted, thereby, a sensor device using digital arithmetic processing and outputting analogue voltages is provided allowing the host system to judge easily whether the sensor device is operating normally or is failing.

Abstract: A 4-cycle engine includes an oil tank mounted to one side of an engine body, and an oil slinger accommodated in the oil tank and adapted to scatter an oil stored in said oil tank to generate a lubricating oil mist. In the 4-cycle engine, a timing transmitting case is interposed between the engine body and the oil tank, so that heat transmission from the engine body to the oil tank is shielded. Thus, the oil tank can be disposed at a location spaced apart from the engine body without bringing about an increase in size of the engine, thereby suppressing the heat transmission from the engine body to the oil tank to the utmost to prevent overheating of the oil in the oil tank.

Abstract: The present invention provides Cr-containing steel that has satisfactory levels in all of toughness, strength (hardness) and corrosion resistance of HAZ, and that is suitably used as parts for welded structures.

Abstract: A ferritic stainless steel sheet which has not only superior high-temperature fatigue characteristics, but also superior workability at room temperatures. The steel sheet contains, by weight percent, C: not more than 0.02%, Si: 0.2 to 1.0%, Mn: not more than 1.5%, Cr: 11.0 to 20.0%, Ni: 0.05 to 2.0%, Mo: 1.0 to 2.0%, Al: not more than 1.0%, Nb: 0.2 to 0.8%, and N: not more than 0.02%, balance essentially Fe, and an aspect ratio (dRD/dTD) of grain size in planes at ¼ and ¾ sheet thickness, seen a direction normal to a sheet surface, in the range of 1.03 to 1.35. The steel sheet has a thickness greater than 0.3 mm but not greater than 2.5 mm, and a yield strength Y.S.≦360 MPa and an r-value≧1.3 at 30° C., and wherein after maintaining the steel sheet at 900° C. for one hour, the Y.S.≧18.0 MPa.