Abstract: A dielectric recording medium unit is provided with: the dielectric recording/reproducing head; a tracking mechanism of the dielectric recording/reproducing head; the dielectric recording medium placed facing to a probe of dielectric recording/reproducing head; and a X-Y stage for parallel-translating the dielectric recording medium These components are stored in a package. The package is provided with: an electrical connection device for allowing the electrical connection with an external apparatus; and mechanical connection devices for allowing the mechanical connection with the external apparatus.

Abstract: The dielectric recording medium is provided with a dielectric material, a conductive thin film, and a substrate. The conductive thin film and the substrate are bonded by a resin adhesive. The dielectric material is constructed of a ferroelectric single crystal having a uniform thickness, and its one surface is used for a recording and/or reproducing surface, on the order of mm on a side and about 5000 Å thick. The conductive thin film, about 1000 to 2000 Å thick, is placed on a surrounding portion and a back surface of the recording and/or reproducing surface of the dielectric material. The substrate is intended to preserve the thin dielectric material and maintain the planarity, and concave portions are formed on the adhesive surface. The concave portions absorb excessive resin adhesive when the dielectric material is bonded onto the substrate, which makes the adhesive surface uniform and flat.

Abstract: A dielectric recording medium is provided with three layers of: a dielectric material, an electric conductor, and a substrate, and has a groove on the recording surface of the dielectric material. The groove is provided with one or a plurality of grooves. When a voltage is applied to a probe, the dielectric material just under the probe is polarized depending on an electric field generated between the electric conductor and the probe, which allows recording. Moreover, the groove facilitates the probe tracking since the probe scans along this groove.

Abstract: A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.

Abstract: The dielectric material is, for example, a ferroelectric single crystal having a uniform thickness, and its one surface is used for a recording and reproducing surface on which a probe for recording and reproducing works. LiTaO3 is used as the dielectric material. The conductive thin film, which is, for example, about 1000 to 2000 Å thick, is placed on a surrounding portion of a recording and reproducing surface, a back surface, and a side surface of the dielectric material. This conductive thin film, to which aluminum is added by a method of deposition, is connected to a common electrode of a recording and reproducing apparatus. The substrate is intended to preserve the dielectric material, which is thin, and it uses silicon or the like in a predetermined thickness, for example. A conductive paste is a material for sticking to the substrate the dielectric material having the conductive thin film thereon, and indium and silver paste are used for it.

Abstract: The record condition extraction system (1) of a dielectric recording medium is intended to obtain an applied voltage and an applied time length to be recorded when recording information in the dielectric recording medium. The record condition extraction system (1) is provided with: an applied voltage setting device (11); an applied time length setting device (12); a record control device (13); an applied voltage/applied time length record device (14); a record device (15); a dot radius measurement device (16); a dot radius record device (17); an optimum dot radius detection device (18); a record condition determination device (19); and an output device (20). The applied voltage setting device (11) and the applied time length setting device (12) set a voltage and a time applied to a probe (31) of the record device (15), respectively.

Abstract: A dielectric information apparatus is provided with a plurality of electrodes (14) for recording information in a small area of a dielectric substance (12) and an earthed electrode (13). The electrodes (14, 13) are placed such that the dielectric substance (12) is sandwiched between the electrodes (14) and the electrode (13). The dielectric information apparatus reads out the information recorded in the small area of a dielectric thin film (12) by applying alternating current signals to the first electrodes (14). The polarization direction of the small area and the direction of an applied electric field decide the dielectric constant of the small area, and the oscillation frequency of an oscillator 20 is determined by a capacitance Cs corresponding to the dielectric constant. An oscillation signal of the oscillator 20 is demodulated at a FM demodulator 21, and the information is detected from the demodulated signal at a signal detector 22.

Abstract: A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

Abstract: The present invention reduces the waveguide loss in an optical coupling between an optical waveguide layer and a photodetector. A cladding layer having a first refractive index is formed on a photodetector formed on a substrate by repeating spin-coating and curing of SOG. The cladding layer is formed in such a way as to gently cover a step portion between the photodetector and a light shielding layer. An optical waveguide layer which can allow propagating light to be coupled to the photodetector is formed on the cladding layer. This structure can suppress steep curvature of the optical waveguide layer above the photodetector.

Abstract: A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.

Abstract: The present invention discloses an optical IC including a photo-detector formed on a substrate, at least one light-blocking film layer formed in a portion of the main surface of the substrate other than the portion where the light-detector is formed, at least two insulator film layers formed so as to cover the light-blocking film layer, a clad layer formed consecutively over the photo-detector and the insulator film layers, and an optical wave-guide path layer formed on the clad layers, in which the insulator film layers are formed so as to form a plurality of staircase-like steps toward the photo-detector.

Abstract: The present invention reduces the waveguide loss in an optical coupling between an optical waveguide layer and a photodetector. A cladding layer having a first refractive index is formed on a photodetector formed on a substrate by repeating spin-coating and curing of SOG. The cladding layer is formed in such a way as to gently cover a step portion between the photodetector and a light shielding layer. An optical waveguide layer which can allow propagating light to be coupled to the photodetector is formed on the cladding layer. This structure can suppress steep curvature of the optical waveguide layer above the photodetector.

Abstract: A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

Abstract: A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

Abstract: In an application layer, time txn necessary for packet transmission is calculated, and a packet pkn is transferred together with the time txn for packet transmission to the device driver of a data link layer. Then, in the data link layer, the amount of data is controlled based on the time transferred together with the packet. Thus, the amount of data transmitted per unit time from a transmission terminal on a packet network to the network can be controlled.

Abstract: A raw material feeding apparatus is provided for a film-forming apparatus in which a thin film is formed from a solid matter as a raw material during chemical vapor-phase deposition. The apparatus includes sub-containers each having an opening for introduction of a gas, an opening for discharge of a gas, a bottom, on which a solid raw material is spread between the inlet opening and the outlet opening, and a wall defining a gap, in which a gas being introduced and discharged is made to contact the solid raw material spread on the bottom while the gas is moved on the surfaces of the material. The apparatus also includes a raw material container for receiving and holding the sub-containers. The apparatus also includes a heating device for heating the raw material container, and carrier gas conveying tubes for introducing a carrier gas into the raw material container and including a passage communicated to the outlet openings of the sub-containers.

Abstract: A wavelength converting device for converting a wavelength of a light is provided. The wavelength control device including: a waveguide layer for guiding the light; a substrate having a lattice constant is different from a lattice constant of the waveguide layer; and a buffer layer which is disposed between the waveguide layer and the substrate and which has a lattice constant between the lattice constant of the waveguide layer and the lattice constant of the substrate.

Abstract: A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

Abstract: A wavelength converting device for converting a wavelength of a light is provided. The wavelength converting device includes: a substrate comprising MgO; a waveguide membrane comprising KNbO.sub.3, for guiding the light; a buffer membrane which is disposed between the substrate and the waveguide membrane and which comprises KTa.sub.x Nb.sub.(1-x) O.sub.3. A mixing rate of Ta in the KTa.sub.x Nb.sub.(1-x) O.sub.3 in the buffer membrane is in a range of 40 atom % to 60 atom % at a surface of the buffer membrane touching the substrate, and is 0 atom % at a surface of the buffer membrane touching the waveguide membrane.

Abstract: When a potassium-containing substance is formed in to a film using an organic potassium complex as a potassium source by the CVD method, it is prevented that the film formation rate is changed with the lapse of time, and the potassium content in the film thus formed is changed.As a potassium source for vaporization used for depositing the potassium-containing substance on a substrate by the CVD method, a .beta.-diketone complex of potassium that has been melted by heating to a temperature higher than its melting point and then cooled to be solidified is used.