Patents by Inventor Atsushi Sano

Atsushi Sano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STABILIZED LITHIUM POWDER, AND NEGATIVE ELECTRODE AND LITHIUM ION SECONDARY BATTERY USING THE SAME
    Publication number: 20160099465
    Abstract: Stabilized lithium powder according to an embodiment of this disclosure includes lithium particles. Each lithium particle includes an inorganic compound on a surface thereof, the inorganic compound contains lithium hydroxide, and the lithium hydroxide is contained by 2.0 wt % or less relative to the entire stabilized lithium powder.
    Type: Application
    Filed: October 5, 2015
    Publication date: April 7, 2016
    Inventors: Masahiro TSUCHIYA, Tomohiko HASEGAWA, Kazuya KAI, Atsushi SANO
  • STABILIZED LITHIUM POWDER
    Publication number: 20160099467
    Abstract: Stabilized lithium powder according to an embodiment of this disclosure includes powder particles satisfying a relation of C?0.90, where C represents average circularity of the powder particles. And a lithium secondary battery according to an embodiment of this disclosure comprises a negative electrode doped with lithium from the stabilized lithium powder for a lithium ion second battery according to an embodiment of this disclosure, a positive electrode, and an electrolyte.
    Type: Application
    Filed: October 5, 2015
    Publication date: April 7, 2016
    Inventors: Tomohiko HASEGAWA, Masahiro TSUCHIYA, Atsushi SANO
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
    Publication number: 20160086791
    Abstract: The present invention increases controllability of a composition ratio of a multi-element film that contains a predetermined element and at least one element selected from the group consisting of boron, oxygen, carbon and nitrogen. There is provided a method of manufacturing a semiconductor device, including: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming the first film being free of borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and (b) forming the second film having a borazine ring structure and including at least boron and nitrogen.
    Type: Application
    Filed: September 21, 2015
    Publication date: March 24, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi SANO, Yoshiro HIROSE
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
    Publication number: 20160079056
    Abstract: A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
    Type: Application
    Filed: September 16, 2015
    Publication date: March 17, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Katsuyoshi HARADA, Yoshiro HIROSE, Atsushi SANO
  • Film forming method and recording medium for performing the method
    Patent number: 9281181
    Abstract: A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: March 8, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Positive electrode material for lithium ion secondary battery, positive electrode for lithium ion secondary battery, and lithium ion secondary battery
    Patent number: 9263736
    Abstract: A positive electrode material for a lithium ion secondary battery contains a first compound represented by Li3V2(PO4)3 and one or more second compounds selected from vanadium oxide and lithium vanadium phosphate.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: February 16, 2016
    Assignee: TDK CORPORATION
    Inventors: Keitaro Otsuki, Atsushi Sano, Tomohiko Kato
  • Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
    Patent number: 9257275
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: February 9, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • SUBSTRATE PROCESSING APPARATUS
    Publication number: 20160024650
    Abstract: A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate.
    Type: Application
    Filed: July 21, 2015
    Publication date: January 28, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki TOYODA, Hiroshi ASHIHARA, Atsushi SANO, Naonori AKAE, Hidehiro YANAI
  • All-solid-state lithium-ion secondary battery and production method thereof
    Patent number: 9246193
    Abstract: An all-solid-state lithium-ion secondary battery has an anode, a cathode, a solid electrolyte layer disposed between the anode and the cathode, and at least one of a first intermediate layer disposed between the anode and the solid electrolyte layer, and a second intermediate layer disposed between the cathode and the solid electrolyte layer.
    Type: Grant
    Filed: March 24, 2008
    Date of Patent: January 26, 2016
    Assignee: TDK CORPORATION
    Inventor: Atsushi Sano
  • Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
    Patent number: 9245745
    Abstract: A method of manufacturing a semiconductor device, includes: forming a film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a first precursor containing the predetermined element and a halogen group to the substrate; supplying a second precursor containing the predetermined element and an amino group to the substrate; and supplying a reducing agent not containing halogen, nitrogen and carbon to the substrate.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: January 26, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Crash energy absorber of railcar
    Patent number: 9242655
    Abstract: A crash energy absorber is provided at a front portion of a carbody of a railcar and configured to crush by a load from a front side to absorb crash energy. The crash energy absorber includes: a main absorbing portion extending in a front-rear direction; and a pair of sub absorbing portions respectively provided at upper and lower sides of the main absorbing portion. Each of the pair of sub absorbing portions is formed integrally with the main absorbing portion via breakable portions each extending in the front-rear direction.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: January 26, 2016
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Makoto Taguchi, Atsushi Sano, Toshiyuki Yamada, Hideki Kumamoto, Seiichiro Yagi, Masayuki Tomizawa
  • Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
    Patent number: 9234277
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas containing the predetermined element and a halogen element to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: January 12, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Ryuji Yamamoto, Atsushi Sano
  • Negative electrode and lithium ion secondary battery
    Patent number: 9236604
    Abstract: A negative electrode includes a negative electrode active material layer containing a negative electrode active material mainly containing silicon and silicon oxide. In the negative electrode, the ratio of the film thickness of the negative electrode active material layer to the particle size distribution D99 is in the range of 1.2 to 2.0, the value of the D99 is in the range of 7 to 27 ?m, and the negative electrode active material layer has a density ranging from 1.2 to 1.6 g/cm3.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: January 12, 2016
    Assignee: TDK CORPORATION
    Inventors: Yasuhiro Ikeda, Atsushi Sano
  • Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
    Patent number: 9196476
    Abstract: A thin film having a high resistance to HF and a low dielectric constant is formed with high productivity. A method of manufacturing a semiconductor device, includes performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas containing a predetermined element, carbon and a halogen element and having a chemical bond between the predetermined element and carbon to a substrate; and (b) supplying a reactive gas including a borazine compound to the substrate, wherein the cycle is performed under a condition where a borazine ring structure in the borazine compound and at least a portion of the chemical bond between the predetermined element and carbon in the source gas are preserved to form a thin film including the borazine ring structure and the chemical bond between the predetermined element and carbon on the substrate.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: November 24, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • LITHIUM ION SECONDARY BATTERY
    Publication number: 20150333365
    Abstract: Provided is an all-solid lithium ion secondary battery including a sintered body including a solid electrolyte layer and a positive electrode layer and a negative electrode layer which are stacked alternately with the solid electrolyte layer interposed therebetween, wherein: the positive electrode layer, the negative electrode layer, and the solid electrolyte layer include a compound containing lithium and boron; and a content of lithium and boron contained in the compound to a total of a positive electrode active material included in the positive electrode layer, a negative electrode active material included in the negative electrode layer, and a solid electrolyte included in the solid electrolyte layer is respectively 4.38 mol % to 13.34 mol % in terms of Li2CO3 and 0.37 mol % to 1.11 mol % in terms of H3BO3.
    Type: Application
    Filed: May 8, 2015
    Publication date: November 19, 2015
    Inventors: Hiroshi SATO, Atsushi SANO
  • Film forming method and recording medium for performing the method
    Patent number: 9190298
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate, and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second precursor including the predetermined element and the halogen group to the substrate, and supplying a third precursor to the substrate.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: November 17, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Katsuyoshi Harada, Yoshiro Hirose, Tsukasa Kamakura, Atsushi Sano, Yugo Orihashi
  • Floor structure of railcar
    Patent number: 9180894
    Abstract: Provided is a floor structure of a railcar in which thickness of a heat insulating material can be reduced while having predetermined heat resistance. The floor structure of the railcar includes a underframe having a pair of side sills extending in a railcar longitudinal direction and a cross beam arranged between the side sills and extending in a railcar width direction, a structural floor provided on an upper surface of the underframe, and a first heat insulating material arranged on a lower side of the structural floor via an air layer for the structural floor.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: November 10, 2015
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Makoto Taguchi, Atsushi Sano, Toshiyuki Yamada, Osamu Muragishi, Masashi Kawamura, Yuji Kamei, Shuichi Mizuma
  • Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
    Patent number: 9177786
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas to the substrate, and supplying excited species from each of a plurality of excitation units provided at a side of the substrate to the substrate. Each of the plurality of excitation units generates the excited species by plasma-exciting a reaction gas. In supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: November 3, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose, Kiyohiko Maeda, Kazuyuki Okuda, Ryuji Yamamoto
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
    Publication number: 20150311060
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
    Type: Application
    Filed: July 6, 2015
    Publication date: October 29, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi SANO, Yoshiro HIROSE
  • NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY
    Publication number: 20150311519
    Abstract: A negative electrode active material for a lithium ion secondary battery includes secondary particles formed by primary particles containing iron oxide that are linked in a chain.
    Type: Application
    Filed: April 22, 2015
    Publication date: October 29, 2015
    Inventors: Yasuyuki KAWANAKA, Tomohiko KATO, Atsushi SANO