Abstract: A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.

Abstract: A nonaqueous electrolyte for a lithium-ion secondary battery containing 0.1 ppm to 20 ppm of vanadium in terms of vanadium ions, and containing cyclic carbonate and chain carbonate is used.

Abstract: A nonaqueous electrolytic solution includes a cyclic carbonate and a chain carbonate, and contains a glycol sulfate derivative represented by formula (I) below and fluoroethylene carbonate: [wherein each of R1 and R2 independently represents at least one selected from the group consisting of a hydrogen atom and a hydrocarbon group having 1 to 5 carbon atoms].

Abstract: A lithium ion secondary battery includes a positive electrode including a positive electrode active material having a composition represented by the formula (1) LixNiyCozMtO2??(1) (wherein the element M is at least one kind selected from the group consisting of Mg, Ba, Al, Ti, Mn, V, Fe, Zr, and Mo and x, y, z, and t satisfy the following formulae: 0.9?x?1.2, 0?y?1.1, 0?z?1.1, and 0?t?1.1), and a negative electrode including a negative electrode active material mainly containing silicon and silicon oxide, and having an absorbance of 0.01 to 0.035 at 2110±10 cm?1 according to an FT-IR method.

Abstract: [Problem] To provide a lithium ion secondary battery having excellent high-rate discharge characteristics. [Solution] Excellent high-rate discharge characteristics are obtained by a lithium ion secondary battery in which a compound represented by Lia(NixCoyAl1-x-y)O2 (where 0.95?a?1.05, 0.5?x?0.9, 0.05?y?0.2, and 0.7?x+y?1.0) is used as a positive electrode active material in a positive electrode, the positive electrode has an electrode density of 3.75 to 4.1 g/cm3, and the positive electrode has a BET specific surface area of 1.3 to 3.5 m2/g as an electrode.

Abstract: A negative electrode active material for a lithium ion secondary battery includes secondary particles formed by primary particles containing iron oxide that are linked in a chain.

Abstract: An active material that can achieve sufficient discharge capacity at high discharging rate, an electrode including the active material, and a lithium ion secondary battery including the electrode, and a method for manufacturing the active material are provided. The active material includes a LiVOPO4 powder, a first carbon powder, and a second carbon powder. A relational expression of 0.05?A1/A2?0.5 is satisfied, where A1 represents the ratio of the G band peak height observed around 1580 cm?1 in Raman spectrum of the first carbon powder to the 2D band peak height observed around 2700 cm?1 in the Raman spectrum of the first carbon powder, and A2 represents the ratio of the G band peak height observed around 1580 cm?1 in Raman spectrum of the second carbon powder to the 2D band peak height observed around 2700 cm?1 in the Raman spectrum of the second carbon powder.

Abstract: To provide an active material with high capacity, high initial charge-discharge efficiency, and high average discharge voltage. An active material according to the present invention includes a first active material and a second active material, wherein the ratio (?) of the second active material (B) to the total amount by mole of the first active material (A) and the second active material (B) satisfies 0.4 mol %???18 mol % [where ?=(B/(A+B))×100].

Abstract: It is an object of the present invention to provide a compressor that has a simple structure, produces a damping effect and improves aerodynamic performance. In a compressor including stator blades 4 circumferentially mounted to an inner circumferential surface side of a casing 6 forming a annular path; and an inner barrel 7 supported by the casing and arranged on the radially inside of the stator blade as a partition wall on the radial side of the annular path; the stator blade includes an outer shroud 10 mounted to an inner circumferential surface of the casing at a position facing the inner barrel, and an inner shroud 11 supporting a blade portion at an inner diameter side, the inner shroud being disposed in an annular groove formed in an outer circumferential surface of the inner barrel facing the inner shroud. The stator blade including the outer shroud 10, the inner shroud 11 and the blade portions 9 are formed in a monolithic structure by milling.

Abstract: A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.

Abstract: In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.

Abstract: A seat hack frame (100) for a vehicle made of a fiber-reinforced composite material containing a thermoplastic resin matrix and a reinforcing fiber, the seat back frame (100) including a seat back frame body (1), a metal plate (3) welded to the seat back frame body (1) at a reclining device (2) attaching position, and a metal reclining device (2) weld joined to the metal plate (3).

Abstract: A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate.

Abstract: A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.

Abstract: A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.

Abstract: A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.

Abstract: A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

Abstract: A liquefied gas tank installed in a surrounding structural body includes: a tank main body in which a liquefied gas is storable, the tank main body including a plurality of planar portions and corner portions between the planar portions, the corner portions having less rigidity than that of the planar portions; a bottom supporting body that supports the tank main body from below the tank main body; and a plurality of side supporting bodies that support the tank main body from side of the tank main body. The tank main body is configured to stand by itself by being supported by the bottom supporting body when the tank main body stores no cargo, and be supported by the bottom supporting body and the side supporting bodies when the liquefied gas is stored in the tank main body.