Abstract: Provided is a solid-state imaging device including a first photoelectric-conversion-portion selectively receiving a first wavelength light in incident light and performing photoelectric conversion; and a second photoelectric-conversion-portion selectively receiving a second wavelength light which is shorter than the first wavelength, wherein the first photoelectric-conversion-portion is laminated above the second photoelectric-conversion-portion in an imaging area of a substrate so that the second photoelectric-conversion-portion receives the light transmitting the first photoelectric-conversion-portion, wherein a transmitting portion is formed in the first photoelectric-conversion-portion so that the second wavelength light transmits the second photoelectric-conversion-portion more than other portions, and wherein the transmitting portion is formed to include a portion satisfying the following Equation within a width D defined in the direction of the imaging area, a refraction index n of a peripheral portion

Abstract: A solid-state imaging device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

Abstract: A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.

Abstract: A solid-state image capturing device includes a first detecting unit for detecting a first wavelength component and a second detecting unit for detecting a second wavelength component which has a longer wavelength than at least the first wavelength component and wherein in a depth direction, an active region where a first type dopant of the second detecting unit is located is deeper than an active region where a first electroconductive type dopant of the first detecting unit is located. A signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.

Abstract: A solid-state imaging device, includes: a pixel array area including an unit pixel having a photoelectric conversion element and a transfer gate; a first supply voltage control means for supplying a first control voltage to a control electrode of the transfer gate; a second supply voltage control means for sequentially supplying one or plural second control voltages having a voltage value different from the first control voltage to the control electrode; a third supply voltage control means for supplying a third control voltage having the same voltage value as the second control voltages once or plural times prior to one or plural supplies of the second control voltages; a first driving means for reading signal charges from the transfer gate when the first control voltage is supplied; and a second driving means for reading signal charges from the transfer gate once and more when the second control voltage is sequentially applied.

Abstract: A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

Abstract: A physical information acquisition device uses a device including a detection unit for detecting electromagnetic waves, and a unit signal generating unit for generating and outputting the corresponding unit signal based on the amount of electromagnetic waves detected by the detection unit for detecting a physical quantity distribution in which the unit components are disposed on the same substrate in a predetermined sequence, for acquiring physical information for a predetermined application based on the unit signal.

Abstract: A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens.

Abstract: A solid-state imaging device including an array of a plurality of first pixels and a plurality of second pixels with higher sensitivity than the first pixels, a first control signal line that controls the first pixels, and a second control signal line that controls the second pixels, wherein the first control signal line and the second control signal line are driven independent of each other.

Abstract: A polymer compound having a monosaccharide or an oligosaccharide residue, or an amino acid or peptide residue bound to a monosaccharide or an oligosaccharide residue bound to a side chain of a water-soluble polymer through a linker containing a selectively cleavable bond, the water-soluble polymer containing 20 to 80 mol % of (meth)acrylic acid residue.

Abstract: A straight-type finish, which has improved storage characteristics and is capable of preventing synthetic fibers from becoming electrically charged and uneven dyeing from being generated, contains a lubricant and a functional improvement agent at specified ratios. A metal organic sulfonate of a specified type is contained at least as a part of the functional improvement agent at a specified mass % of the total.

Abstract: A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor.

Abstract: An optical member includes high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light.

Abstract: A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group.

Abstract: A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light.

Abstract: A processing agent for synthetic fibers contains four specified kinds of components (Components A, B, C and D) each by a specified amount and also by a specified total amount so as to have improved characteristics of preventing occurrence of fluffs. yard breaking and uneven dyeing when applied to synthetic fibers at a specified rate.

Abstract: A solid-state image capturing device, includes a semiconductor board, upon which same semiconductor board are disposed in a predetermined order: a first detecting unit for detecting a first wavelength region component within an electromagnetic wave; and a second detecting unit for detecting a second wavelength region component which is longer wavelength side than at least the first wavelength region component, wherein in the depth direction from the surface of the semiconductor board, a valid region where a first electroconductive type dopant of the second detecting unit is formed reaches a portion deeper than a valid region where a first electroconductive type dopant of the first detecting unit is formed.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer.