Patents by Inventor Atsushi Tokuda

Atsushi Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11976356
    Abstract: A vaporization supply apparatus 1 includes a preheating section 2 for preheating a liquid raw material L, a vaporization section 3 provided on top of the preheating section 2 for heating and vaporizing the preheated liquid raw material L sent from the preheating section 2, a flow rate control device 4 provided on top of the vaporization section 3 for controlling the flow rate of a gas G sent from the vaporization section 3, and heaters 5 for heating the preheating section 2, the vaporization section 3 and the flow rate control device 4.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: May 7, 2024
    Assignee: FUJIKIN INCORPORATED
    Inventors: Takatoshi Nakatani, Atsushi Hidaka, Ichiro Tokuda, Keisuke Nakatsuji
  • Patent number: 10518445
    Abstract: Provided are that a cage for a rolling bearing in which seizure or break is not generated under a condition of a high temperature and a high speed in which a dm·n value is not less than 80×104, and a rolling bearing using the cage. The rolling bearing 1 is provided with an inner ring 2, an outer ring 3, a plurality of rolling elements 4 interposed between the inner ring and the outer ring and a cage 5 which retains the rolling elements 4. The cage 5 is formed by injection molding a resin composition. The resin composition comprises polyamide resin made from a dicarboxylic acid component and a diamine component as a base resin and a fiber reinforcing member added. The dicarboxylic acid component contains terephthalic acid as a main component. The diamine component contains 1,10-diaminodecane as a main component. The fiber reinforcing member contains 15 to 50 mass % of glass fibers or 10 to 35 mass % of carbon fibers based on the whole resin composition.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: December 31, 2019
    Assignee: NTN CORPORATION
    Inventors: Takumi Hayashi, Atsushi Tokuda
  • Publication number: 20170348881
    Abstract: Provided are that a cage for a rolling bearing in which seizure or break is not generated under a condition of a high temperature and a high speed in which a dm·n value is not less than 80×104, and a rolling bearing using the cage. The rolling bearing 1 is provided with an inner ring 2, an outer ring 3, a plurality of rolling elements 4 interposed between the inner ring and the outer ring and a cage 5 which retains the rolling elements 4. The cage 5 is formed by injection molding a resin composition. The resin composition comprises polyamide resin made from a dicarboxylic acid component and a diamine component as a base resin and a fiber reinforcing member added. The dicarboxylic acid component contains terephthalic acid as a main component. The diamine component contains 1,10-diaminodecane as a main component. The fiber reinforcing member contains 15 to 50 mass % of glass fibers or 10 to 35 mass % of carbon fibers based on the whole resin composition.
    Type: Application
    Filed: December 21, 2015
    Publication date: December 7, 2017
    Inventors: Takumi HAYASHI, Atsushi TOKUDA
  • Patent number: 9445461
    Abstract: A method is provided to produce a high-frequency heat treatment coil including a heating section for heating a heat treatment portion of an outer joint member for a constant velocity universal joint. The heating section is formed by machining in an integrated manner, and is joined to another section to complete the high-frequency heat treatment coil.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: September 13, 2016
    Assignee: NTN CORPORATION
    Inventors: Takeshi Shimasawa, Shintaro Suzuki, Atsushi Tokuda
  • Patent number: 9263691
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: February 16, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Publication number: 20150188071
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: March 12, 2015
    Publication date: July 2, 2015
    Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
  • Patent number: 8994017
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: March 31, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Publication number: 20140246423
    Abstract: Provided are a high-frequency heat treatment coil that can be assembled with high dimension accuracy and can perform high-quality heat treatment, a method of producing such a high-frequency heat treatment coil, a constant velocity universal joint subjected to high-quality heat treatment, and a drive shaft and a propeller shaft using such a constant velocity universal joint. The method is provided to produce a high-frequency heat treatment coil including a heating section (71a, 71b, 71c) for heating a heat treatment portion of an outer joint member (51) for a constant velocity universal joint. The heating section (71a, 71b, 71c) is formed by machining in an integrated manner, and the heating section (71a, 71b, 71c) is joined to another section to complete the high-frequency heat treatment coil.
    Type: Application
    Filed: November 2, 2012
    Publication date: September 4, 2014
    Applicant: NTN CORPORATION
    Inventors: Takeshi Shimasawa, Shintaro Suzuki, Atsushi Tokuda
  • Patent number: 8758905
    Abstract: A quinoxaline derivative represented by a formula (1) is provided. In the formula (1), R9 and R10 and R11 and R12 are bonded to each other to form an aromatic ring, and Ar1 to Ar4 each independently represents an aryl group or a heterocyclic group.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: June 24, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Atsushi Tokuda, Hiroko Abe, Ryoji Nomura, Satoshi Seo
  • Publication number: 20140091297
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: December 10, 2013
    Publication date: April 3, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
  • Patent number: 8610109
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: December 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 8337940
    Abstract: A method for manufacturing a display device of the present invention comprises the steps of forming insulating barriers which surround electrode and project upward from the surface of the electrode, and bringing the whole substrate into contact with water after applying the solution including an acceptor in wet process. According to the present invention, an organic conductive layer can be uniformly formed over a substrate in wet process even if the substrate does not have a smooth surface and has distribution in wettability of the surface.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: December 25, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Atsushi Tokuda
  • Publication number: 20120286257
    Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Ar1 and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.
    Type: Application
    Filed: July 25, 2012
    Publication date: November 15, 2012
    Inventors: Satoko SHITAGAKI, Atsushi TOKUDA, Hiroko ABE, Ryoji NOMURA, Satoshi SEO
  • Patent number: 8283052
    Abstract: It is an object to provide a new substance excellent in electron-transporting property, and a light-emitting element and a light-emitting device using the substance. A quinoxaline derivative represented by the general formula (G1) is provided. In the general formula (G1), each of R1 to R4 represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms; and each of Ar1 and Ar2 represents an aryl group having 6 to 25 carbon atoms. Such a quinoxaline derivative is excellent in electron-transporting property and very effective as an electron-transporting material in a light-emitting element and the like.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: October 9, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakazu Egawa, Atsushi Tokuda, Satoko Shitagaki
  • Patent number: 8231984
    Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Arl and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: July 31, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Atsushi Tokuda, Hiroko Abe, Ryoji Nomura, Satoshi Seo
  • Patent number: 7951470
    Abstract: According to the present invention, a light-emitting element, a light-emitting device, and a lighting system, each of which has a broad spectrum like sunlight and has high color rendering properties, can be obtained. One embodiment of the present invention has a light-emitting device which includes at least two kinds of luminescence center materials, and at least one kind of the luminescence center materials is a quinoxaline derivative represented by the following general formula (1): wherein R1 to R4 are individually hydrogen or an alkyl group having 4 carbon atoms (a straight-chain structure or a branch structure).
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: May 31, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsushi Tokuda, Masakazu Egawa
  • Publication number: 20100237342
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: June 4, 2010
    Publication date: September 23, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
  • Patent number: 7737437
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: June 15, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 7709883
    Abstract: An object is to provide a nonvolatile semiconductor memory device which is excellent in a writing property and a charge retention property. In addition, another object is to provide a nonvolatile semiconductor memory device capable of reducing writing voltage. A nonvolatile semiconductor memory device includes a semiconductor layer or a semiconductor substrate including a channel formation region between a pair of impurity regions that are formed apart from each other, and a first insulating layer, a plurality of layers formed of different nitride compounds, a second insulating layer, and a control gate that are formed in a position which is over the semiconductor layer or the semiconductor substrate and overlaps with the channel formation region.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: May 4, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Tamae Takano, Atsushi Tokuda, Ryota Tajima, Shunpei Yamazaki
  • Publication number: 20100069636
    Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Arl and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.
    Type: Application
    Filed: September 11, 2009
    Publication date: March 18, 2010
    Inventors: Satoko Shitagaki, Atsushi Tokuda, Hiroko Abe, Ryoji Nomura, Satoshi Seo