Abstract: A cathode and an electrolytic capacitor including the cathode which can suppress production of hydrogen gas are provided. The cathode of the electrolytic capacitor includes cathode foil formed of valve action metal and a conductive layer formed on a surface of the cathode foil. A natural immersion potential of the cathode foil when immersed in an electrolyte solution is at a higher side than a natural immersion potential of reference cathode foil formed of the valve action metal with purity of 99.9%.

Abstract: A working machine includes a working part; a motor configured to drive the working part; a motor housing covering at least a part of the motor; an outer housing covering at least a part of the motor and at least a part of the motor housing; and a light emitter disposed at a part of the motor housing that is covered by the outer housing. The outer housing includes an opening at a part of the outer housing that faces the light emitter. The opening allows light emitted from the light emitter to pass through the opening.

Abstract: A broadcast receiving apparatus having a seek function of sweeping a received frequency, stopping the sweeping if the level of the received signal is equal to or higher than a threshold level of an S meter signal in SD check (SD check results in H determination), and setting a reception state with the received frequency includes a signal meter configured to detect the level of the received signal, and an AGC circuit configured to control the level of the received signal with the field strength of an input signal. In this case, if the direct current value to be applied to the PIN diode is equal to or higher than a predetermined direct current value, the threshold level of the S meter signal is changed to a lower value under a state where the AGC circuit is operating because a neighboring interfering channel exists.

Abstract: A reflection type encoder, which receives a plurality of light-receiving signals from a single scale, includes a light source, a scale having a plurality of patterns formed thereon to which light is irradiated from the light source, and a light-receiving element for receiving light reflected from each of the plurality of patterns, wherein a plurality of patterns each having different thicknesses are formed on a single track of the scale by using a dielectric substance, light of a plurality of wavelengths each having different brightnesses in accordance with differences in the thickness of the dielectric substance is irradiated from the light source, and a light-receiving signal is obtained for the respective thicknesses of the dielectric substance. Therefore, the scale can be downsized by overlapping a plurality of patterns on the same track.

Abstract: A scale for a photoelectric encoder effectively protects the base of the scale from corrosion, rust, and flaws. The scale includes a base, a light-absorbing layer including a DLC layer formed on at least one surface of the base, and light-reflecting layers with a higher reflectance than that of the light-absorbing layer with respect to light falling within a wavelength range and formed into a grating on the light-absorbing layer.

Abstract: A photoelectric encoder includes: a scale provided with a first optical grating; a detector unit opposed to the scale; and a light source integrated with the scale, the light source emitting light to be modulated by the first optical grating and received by the detector unit.

Abstract: A reflection type encoder, which receives a plurality of light-receiving signals from a single scale, includes a light source, a scale having a plurality of patterns formed thereon to which light is irradiated from the light source, and a light-receiving element for receiving light reflected from each of the plurality of patterns, wherein a plurality of patterns each having different thicknesses are formed on a single track of the scale by using a dielectric substance, light of a plurality of wavelengths each having different brightnesses in accordance with differences in the thickness of the dielectric substance is irradiated from the light source, and a light-receiving signal is obtained for the respective thicknesses of the dielectric substance. Therefore, the scale can be downsized by overlapping a plurality of patterns on the same track.

Abstract: A scale for a photoelectric encoder effectively protects the base of the scale from corrosion, rust, and flaws. The scale includes a base, a light-absorbing layer including a DLC layer formed on at least one surface of the base, and light-reflecting layers with a higher reflectance than that of the light-absorbing layer with respect to light falling within a wavelength range and formed into a grating on the light-absorbing layer.

Abstract: On the side of a first main surface of a module base, a transmitter is provided which includes wiring patterns formed on the first main surface and electronic components provided on the wiring patterns. On the side of a second main surface of the module base, a receiver is provided which includes wiring patterns formed on the second main surface and electronic components provided on the wiring patterns. A motherboard has an opening formed therein, and an electronic circuit module is mounted on the motherboard, with the receiver inserted into the opening.

Abstract: A sensor block that includes a plurality of sensor chips in combination. Each sensor chip includes a semiconductor substrate having a detection unit formed therein, and two glass substrates bonded to both sides of the semiconductor substrate. One of the glass substrates is shared among the sensor chips and serves as a base block to support the sensor chips.

Abstract: A first metal layer of tungsten is formed on a substrate in a scale. A second metal layer of chromium is formed on the first metal layer. The second metal layer is selectively removed with a mask of resist and an etching stopper of the first metal layer to form an optical grating.

Abstract: A first AGC voltage and a second AGC voltage are taken from the final stage of a radio-frequency circuit and the output side of a bandpass filter, respectively, and the gain of the radio-frequency circuit is controlled on the basis of the two AGC voltages. The pass-band width of the bandpass filter is approximately two times greater than the frequency interval of FM broadcast signals. The second AGC voltage is set higher than the first AGC voltage in the pass-band of the bandpass filter.

Abstract: A first metal layer of tungsten is formed on a substrate in a scale. A second metal layer of chromium is formed on the first metal layer. The second metal layer is selectively removed with a mask of resist and an etching stopper of the first metal layer to form an optical grating.

Abstract: There is provided a displacement measuring apparatus efficiently productive and easily applicable to high precise measurement of displacement with contact probe detection for hardly-measurable works in the art such as micro-works and deep parts in complicated structures. A scale member includes a spindle and a scale both supported by a parallel leaf spring movable on a scale substrate. The spindle is arranged in coaxial with a measurement axis in the scale member. The L & S slit-processed scale is integrated with the spindle and supported by the parallel leaf spring to move together with the spindle along the measurement axis. The spindle, scale and parallel leaf spring are coupled to the scale substrate interposing an anchor of the parallel leaf spring therebetween. The spindle, scale and parallel leaf spring are formed in an integral structure and only the anchor contacts the scale substrate while the spindle, scale and parallel leaf spring slightly float from the scale substrate.

Abstract: An implementation base (10) is formed of a silicon substrate (11) having a recess (12) on a surface. Wire layers (13) are formed on the silicon substrate (11), continuously extending from the bottom of and via the side of the recess (12) to the top surface. A semiconductor chip (14) is implemented in the recess (12) of the implementation base (10) in a flip-chip manner to configure a functional device unit.

Abstract: A first AGC voltage and a second AGC voltage are taken from the final stage of a radio-frequency circuit and the output side of a bandpass filter, respectively, and the gain of the radio-frequency circuit is controlled on the basis of the two AGC voltages. The pass-band width of the bandpass filter is approximately two times greater than the frequency interval of FM broadcast signals. The second AGC voltage is set higher than the first AGC voltage in the pass-band of the bandpass filter.

Abstract: A transmission electrode 10 and a detection electrode 12 are placed in an electrode section of a sensor and are capacity-coupled with a reception electrode placed on an opposed scale. Capacity change between the transmission electrode 10 and the reception electrode caused by displacement is detected with the detection electrode 12. A plurality of signals different in phase are supplied to the transmission electrode 10. The signal lines are wired like a zigzag using an upper layer and a lower layer and the distances between the signal lines and the detection electrode 12 are made substantially equal for making uniform the crosstalk amounts relative to the detection electrode 12.

Abstract: A transmission electrode 10 and a detection electrode 12 are placed in an electrode section of a sensor and are capacity-coupled with a reception electrode placed on an opposed scale. Capacity change between the transmission electrode 10 and the reception electrode caused by displacement is detected with the detection electrode 12. A plurality of signals different in phase are supplied to the transmission electrode 10. The signal lines are wired like a zigzag using an upper layer and a lower layer and the distances between the signal lines and the detection electrode 12 are made substantially equal for making uniform the crosstalk amounts relative to the detection electrode 12.

Abstract: A semiconductor device allowing reduction in area occupied by a bipolar transistor as well as a method of manufacturing the same are obtained. The semiconductor device includes a substrate, first conductivity type regions, a collector region, base regions and emitter regions. The first conductivity type region is formed on the substrate, and has a main surface. The collector region is formed in the first conductivity type region. The base region is located in the first conductivity type region and on the collector region. The emitter region is located in the first conductivity type region and on the base region. The first conductivity type region is provided with grooves extending to the collector region, and isolation grooves disposed around a vertical bipolar transistor. The grooves are filled with conductors of the second conductivity type. The isolation grooves are filled with isolation conductors of the second conductivity type.

Abstract: A semiconductor device including a capacitor element which has a high withstand voltage, a large capacitance, and little parasitic resistance and parasitic capacitance. On interlayer insulating films provided on a semiconductor device, there is formed a lower electrode of a capacitor element coated with an alumina thin film through use of a portion of a first metal layer to be used for forming a first wiring layer. An electrode to constitute a portion of an upper electrode of the capacitor element is formed from a second metal layer so as to come into contact with the alumina thin film provided on the surface of the lower electrode. On the electrode, an upper electrode of the capacitor element is formed through use of a portion of a third metal layer to be used for forming a second wiring layer. Further, an lead electrode connected to the lower electrode is formed through use of a portion of the third metal layer by removal of a portion of the alumina thin film provided on the surface of the lower electrode.