Abstract: A semiconductor device includes: a substrate; a breakdown voltage holding insulating film; an element portion including a lower element and an upper element; a lead-out wire; a first electrode pad; a second electrode pad being one end portion of the upper element; and a top layer protective film covering the upper element so that the second electrode pad is exposed from a second contact hole. The breakdown voltage holding insulating film and the top layer protective film extend to a region outside the first electrode pad in a direction of extension of the lead-out wire. An electrically conductive pad double stack portion is disposed on an upper surface of the second electrode pad. The top layer protective film covers a peripheral portion of the pad double stack portion.

Abstract: A vibration device includes a quartz substrate including a first vibration section, a second vibration section, and a third vibration section, a pair of first excitation electrodes formed at two principal surfaces of the quartz substrate, a pair of second excitation electrodes so formed as to sandwich the second vibration section in the thickness direction of the quartz substrate, and a pair of third excitation electrodes so formed as to sandwich the third vibration section in the thickness direction of the quartz substrate. At least one of the pair of second excitation electrodes is formed at a first inclining surface that inclines with respect to the two principal surfaces. At least one of the pair of third excitation electrodes is formed at a second inclining surface that inclines with respect to the two principal surfaces. The second inclining surface inclines with respect to the first inclining surface.

Abstract: Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter.

Abstract: The invention provides a laminated film which includes a substrate film, and a coating layer including a polyvinyl alcohol-based copolymer and an inorganic lamellar compound on at least one surface of the substrate film. The laminated film satisfies requirements (a) to (d): (a) the substrate film is a stretched film containing a propylene-based resin; (b) an attached amount of the coating layer is 0.10-0.50 g/m2; (c) in a total reflection infrared absorption spectrum of the laminated film, a ratio (P1/P2) of a peak intensity (P1) having an absorption maximum in a domain of 1040±10 cm?1 to a peak intensity (P2) having an absorption maximum in a domain of 3300±10 cm?1 is within a range of 3.0 to 25.0; and (d) a Martens hardness of a coating layer-side surface of the laminated film measured with a test force of 0.1 mN is 248 N/mm2 or less.

Abstract: A thermally conductive resin composition includes a first resin phase, a second resin phase, and a thermally conductive filler. The first resin phase and the second resin phase are phase-separated. The thermally conductive filler in the first resin phase has a density higher than a density of the thermally conductive filler in the second resin phase.

Abstract: A thermally conductive resin composition includes a first resin phase, a second resin phase, and a thermally conductive filler. The first resin phase and the second resin phase are phase-separated. The thermally conductive filler in the first resin phase has a density higher than a density of the thermally conductive filler in the second resin phase.

Abstract: A recording material conveying device includes: a first conveyor that constitutes a conveyance path of a recording material; a second conveyor that branches from the first conveyor and constitutes a conveyance path of the recording material different from the conveyance path of the first conveyor; and a detector that detects recording material characteristics of the recording material, the detector being arranged in the second conveyor on a downstream side in a conveyance direction of the recording material with respect to a branch portion where the first conveyor and the second conveyor branch.

Abstract: A package includes: a first portion having defined therein a mounting region in which an electronic component is mounted; and a second portion connected to the first portion. An area of the second portion is larger than an area of the first portion in plain view viewed from the direction normal to a surface through which the first portion and the second portion are connected.

Abstract: Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.

Abstract: A coil component includes a primary winding generating a magnetic field by current input from outside, and a secondary winding an induced current generated by the magnetic field passes. The primary winding includes ring-shaped primary first/second turns as viewed in first direction. The secondary winding includes ring-shaped secondary first/second turns as viewed in first direction. The primary and secondary first turns are alternately arranged in first direction to form a first tubular portion. The primary and secondary second turns are alternately arranged in first direction to form a second tubular portion. The second tubular portion is located inside the first tubular portion as viewed in first direction. The input current in each primary first turn and the input current in each primary second turn flow in the same direction.

Abstract: This semiconductor light-emitting device includes a substrate having a substrate main surface, a semiconductor light-emitting element having a light-emitting element main surface mounted on the substrate main surface and facing the same side as the substrate main surface, and a light-emitting element side surface that is a light-emitting surface facing a direction intersecting the light-emitting element main surface, a switching element and a capacitor mounted on the substrate main surface and serving as drive elements used in driving the semiconductor light-emitting element, a translucent member formed from a material having a greater linear expansion coefficient than the substrate and transmitting light emitted from the light-emitting side surface, the translucent member covering the light-emitting element side surface, and a sealing resin formed from a material that has a smaller linear expansion coefficient than the translucent member, the sealing resin sealing the semiconductor light-emitting element, th

Abstract: Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.

Abstract: A driving circuit controls driving of a switching element by outputting a driving signal to the switching element. The driving circuit includes an air-core transformer having a plurality of primary windings and a secondary winding magnetically coupled to each of the plurality of primary windings. An AC signal is input to each of the plurality of primary windings of the air-core transformer. The plurality of primary windings includes a first primary winding and a second primary winding. There is a phase difference between an AC signal input to the first primary winding and an AC signal input the second primary winding.

Abstract: An audio signal processing system and method is executed by an audio signal processing device to decode an audio packet to obtain decoded audio and determine an occurrence of a discontinuity occurring with a sudden increase of an amplitude of the decoded audio obtained by decoding the audio packet. The audio packet may be received correctly after an occurrence of a packet loss, and corrected to improve subjective quality of the decoded audio, wherein correcting the discontinuity of the decoded audio comprises causing distances between ISF/LSF parameters corresponding to a frame in which a packet loss has occurred to be equal.

Abstract: An audio signal transmission device for encoding an audio signal includes an audio encoding unit that encodes an audio signal and a side information encoding unit that calculates and encodes side information from a look-ahead signal. An audio signal receiving device for decoding an audio code and outputting an audio signal includes: an audio code buffer that detects packet loss based on a received state of an audio packet, an audio parameter decoding unit that decodes an audio code when an audio packet is correctly received, a side information decoding unit that decodes a side information code when an audio packet is correctly received, a side information accumulation unit that accumulates side information obtained by decoding a side information code, an audio parameter missing processing unit that outputs an audio parameter upon detection of audio packet loss, and an audio synthesis unit that synthesizes decoded audio from the audio parameter.

Abstract: Semiconductor device includes: semiconductor elements electrically connected in parallel; pad portion electrically connected to the semiconductor elements; and terminal portion electrically connected to the pad portion. As viewed in thickness direction, the semiconductor elements are aligned along first direction perpendicular to the thickness direction. The pad portion includes closed region surrounded by three line segments each formed by connecting two of first, second and third vertex not disposed on the same straight line. As viewed in thickness direction, the first vertex overlaps with one semiconductor element located in outermost position in first sense of the first direction. As viewed in the thickness direction, the second vertex overlaps with one semiconductor element located in outermost position in second sense of the first direction. As viewed in the thickness direction, the third vertex is located on perpendicular bisector of the line segment connecting the first and second vertex.

Abstract: Provided is a register that can more surely suppress abnormal noise caused by air passing through a space between a damper and a retainer. An inner wall of an upper side wall of the retainer is formed with a plurality of rib parts provided on a downstream side relative to an outer periphery on the downstream side of a plate member in a closed state of a damper. The plurality of rib parts is arranged in a direction parallel to a turning axis of the damper, and adjacent rib parts are formed into different shapes. A soft seal member is provided with a plurality of protrusion parts on an upper surface of the outer periphery on the downstream side of the plate member.

Abstract: An objective of the present invention is to correct a temporal envelope shape of a decoded signal with a small information volume and to reduce perceptible distortions.