Patents by Inventor Atsushi Yamaguchi

Atsushi Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10068584
    Abstract: An objective of the present invention is to correct a temporal envelope shape of a decoded signal with a small information volume and to reduce perceptible distortions.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: September 4, 2018
    Assignee: NTT DOCOMO, INC.
    Inventors: Kei Kikuiri, Atsushi Yamaguchi
  • Patent number: 10062565
    Abstract: A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: August 28, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Shinya Takado, Norikazu Ito, Atsushi Yamaguchi
  • Patent number: 10060165
    Abstract: A door lock device has a high degree of freedom in the disposition of an open link for switching between a locked state and an unlocked state and has low operational resistance when being put into the locked state. When there is a malfunction in which the open link is jammed by the dust and therefore does not move from a lock waiting position to an unlock waiting position even when an unlock action is performed, when an outside handle interlock lever is turned, a sliding-contact tilt guide provided on a support body slides and makes sliding-contact with the open link and forcibly tilts the open link, and as a result, it becomes unnecessary to increase an energizing force of a torsion coil spring as a precaution against such malfunction. This makes it possible to reduce the operational resistance when the door lock device is put into the locked state.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: August 28, 2018
    Assignee: AISIN SEIKI KABUSHIKI KAISHA
    Inventors: Atsushi Yamaguchi, Takeshi Tada, Yasuhiko Sono, Masashi Taniyama, Yusuke Kojima, Atsushi Katsurayama, Takashi Nishio, Kazunori Kojima, Masanari Iwata, Yusuke Yamada
  • Publication number: 20180233473
    Abstract: Provided is a paste thermosetting resin composition containing solder powder, a thermosetting resin binder, an activator, and a thixotropy imparting agent. The solder powder has a melting point ranging from 100° C. to 240° C., inclusive. The thermosetting resin binder contains a main agent and a curing agent. The main agent contains a di- or higher functional oxetane compound.
    Type: Application
    Filed: December 6, 2016
    Publication date: August 16, 2018
    Inventors: YASUO FUKUHARA, ATSUSHI YAMAGUCHI
  • Patent number: 10050295
    Abstract: Provided is a solid electrolyte laminate comprising a solid electrolyte layer having proton conductivity and a cathode electrode layer laminated on one side of the solid electrolyte layer and made of lanthanum strontium cobalt oxide (LSC). Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte laminate can further comprise an anode electrode layer made of nickel-yttrium doped barium zirconate (Ni—BZY). This solid electrolyte laminate is suitable for a fuel cell operating in an intermediate temperature range less than or equal to 600° C.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: August 14, 2018
    Assignees: Sumitomo Electric Industries, Ltd., Kyoto University
    Inventors: Chihiro Hiraiwa, Masatoshi Majima, Atsushi Yamaguchi, Naho Mizuhara, Tetsuya Uda, Yohei Noda
  • Publication number: 20180227655
    Abstract: An electronic device includes a housing that has a sound hole formed in an outer surface of the housing, a sound collection member that is disposed in the housing, a sound path that extends from the sound hole to the sound collection member, and a waterproof member that is disposed in the sound path and that reduces a possibility of water reaching the sound collection member via the sound hole, wherein the sound path includes a first path that has a first end coupled to the sound hole and that bends more than once from the first end to a second end of the first path, and a second path that is positioned closer to the sound collection member than the first path is and to which the waterproof member is affixed, the second path extending while having a cross-sectional shape corresponding to a shape of the waterproof member.
    Type: Application
    Filed: January 19, 2018
    Publication date: August 9, 2018
    Applicant: FUJITSU LIMITED
    Inventor: Atsushi Yamaguchi
  • Publication number: 20180197580
    Abstract: A holding frame for an electronic device that is to be inserted and extracted into and from a pair of grooves formed in a chassis so as to face each other, the holding frame includes a pair of plates that are parallel to each other and that form portions of the holding frame, the portions extending along the grooves, three protrusions that are arranged along the grooves and that protrude from the plates toward the grooves, and two support portions that are arranged at portions of the holding frame each of which corresponds to a center portion between a corresponding two of the three protrusions, the two support portions supporting the electronic device between the plates and the electronic device.
    Type: Application
    Filed: December 21, 2017
    Publication date: July 12, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Shinichirou OKAMOTO, Shinichirou Kouno, Satoru Yamada, Atsushi Yamaguchi
  • Publication number: 20180158678
    Abstract: A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.
    Type: Application
    Filed: January 12, 2018
    Publication date: June 7, 2018
    Applicant: ROHM CO., LTD.
    Inventors: Shinya TAKADO, Norikazu ITO, Atsushi YAMAGUCHI
  • Patent number: 9983010
    Abstract: In connection with a voyage in which a ship visits several ports on a sailing route, when a user inputs a berthing period at each port on the sailing route on a screen in a computer for managing voyage information displayed by a terminal device, the terminal device specifies, with regard to each sectional sailing route between two neighboring ports on the sailing route, fuel consumption rate when the ship sails on the sectional sailing route based on a sailing speed determined by the input berthing periods and parameters of maritime weather conditions under which the ship sails on the sectional sailing route. The terminal device calculates fuel consumption required for sailing on each sectional sailing route and total fuel consumption required for sailing the entire sailing route using the specified fuel consumption rates.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: May 29, 2018
    Assignee: Nippon Yusen Kabushiki Kaisha
    Inventors: Takafumi Nanri, Atsushi Yamaguchi, Masaharu Urabe, Ryo Kakuta
  • Patent number: 9967642
    Abstract: An electronic device includes: a case having an aperture; a board located within the case; a microphone located at a position corresponding to the aperture of the case; a partition wall located between the board and the case to surround a periphery of the microphone; and a sound absorbing material having a density of 46 kg/m3 to 69 kg/m3, and located in a space partitioned by the board, the partition wall, and the case to cover the microphone.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: May 8, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Atsushi Yamaguchi, Daisuke Mihara, Tatsuya Fukushi
  • Publication number: 20180122394
    Abstract: An audio signal transmission device for encoding an audio signal includes an audio encoding unit that encodes an audio signal and a side information encoding unit that calculates and encodes side information from a look-ahead signal. An audio signal receiving device for decoding an audio code and outputting an audio signal includes: an audio code buffer that detects packet loss based on a received state of an audio packet, an audio parameter decoding unit that decodes an audio code when an audio packet is correctly received, a side information decoding unit that decodes a side information code when an audio packet is correctly received, a side information accumulation unit that accumulates side information obtained by decoding a side information code, an audio parameter missing processing unit that outputs an audio parameter upon detection of audio packet loss, and an audio synthesis unit that synthesizes decoded audio from the audio parameter.
    Type: Application
    Filed: December 26, 2017
    Publication date: May 3, 2018
    Applicant: NTT DOCOMO, INC.
    Inventors: Kimitaka Tsutsumi, Kei Kikuiri, Atsushi Yamaguchi
  • Patent number: 9935625
    Abstract: The gate drive circuit includes: a gate resistance RG1 connected to a gate G1 of a switching device Q1; and a gated diode DG1 connected in parallel to the gate resistance RG1, wherein a relationship of Vth(Di)<Vth(Tr) is satisfied, where Vth(Di) is a forward threshold voltage of the gated diode DG1, and Vth(Tr) is a threshold voltage of the switching device Q1. There is provided: a gate drive circuit having high speed switching performance in which a misoperation is suppressed and surge voltage is reduced; and a power supply mounted with such a gate drive circuit.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: April 3, 2018
    Assignee: ROHM CO., LTD.
    Inventor: Atsushi Yamaguchi
  • Patent number: 9925612
    Abstract: A semiconductor component includes a semiconductor package having a mountable face, a bump, and a coating part. The bump is made of first solder and is formed on the mountable face. The coating part formed of a first composition containing solder powder made of second solder, a flux component, and a first thermosetting resin binder coats the top end of the bump.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: March 27, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yasuo Fukuhara, Atsushi Yamaguchi
  • Patent number: 9917338
    Abstract: A battery pack includes a battery module including a plurality of cells, a housing that accommodates the battery module and is thermally coupled to the battery module, and a temperature adjuster that is thermally coupled and attached to the housing. The temperature adjuster changes a temperature of the housing.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: March 13, 2018
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Hidefumi Oishi, Takayuki Kato, Hirohisa Kato, Hiromi Ueda, Fumihiko Ishiguro, Naoto Morisaku, Kazuki Maeda, Takashi Sakai, Shintaro Watanabe, Atsushi Yamaguchi, Yuki Chujo
  • Publication number: 20180068669
    Abstract: An audio signal processing device comprises a discontinuity detector configured to determine an occurrence of a discontinuity from a sudden increase of an amplitude of decoded audio obtained by decoding the first audio packet which is received correctly after an occurrence of a packet loss, and a discontinuity corrector for correcting the discontinuity of the decoded audio.
    Type: Application
    Filed: September 15, 2017
    Publication date: March 8, 2018
    Applicant: NTT DOCOMO, INC.
    Inventors: Kimitaka Tsutsumi, Kei Kikuiri, Atsushi Yamaguchi
  • Patent number: 9905419
    Abstract: A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: February 27, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Shinya Takado, Norikazu Ito, Atsushi Yamaguchi
  • Patent number: 9881627
    Abstract: An audio signal transmission device for encoding an audio signal includes an audio encoding unit that encodes an audio signal and a side information encoding unit that calculates and encodes side information from a look-ahead signal. An audio signal receiving device for decoding an audio code and outputting an audio signal includes: an audio code buffer that detects packet loss based on a received state of an audio packet, an audio parameter decoding unit that decodes an audio code when an audio packet is correctly received, a side information decoding unit that decodes a side information code when an audio packet is correctly received, a side information accumulation unit that accumulates side information obtained by decoding a side information code, an audio parameter missing processing unit that outputs an audio parameter upon detection of audio packet loss, and an audio synthesis unit that synthesizes decoded audio from the audio parameter.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: January 30, 2018
    Assignee: NTT DoCoMo, Inc.
    Inventors: Kimitaka Tsutsumi, Kei Kikuiri, Atsushi Yamaguchi
  • Patent number: 9876248
    Abstract: Provided is a solid electrolyte made of yttrium-doped barium zirconate having hydrogen ion conductivity, a doped amount of yttrium being 15 mol % to 20 mol %, and a rate of increase in lattice constant at 100° C. to 1000° C. with respect to temperature changes being substantially constant. Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte can be formed as a thin film, and a solid electrolyte laminate can be obtained by laminating electrode layers on this solid electrolyte. This solid electrolyte can be applied to an intermediate temperature operating fuel cell.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: January 23, 2018
    Assignees: SUMITOMO ELECTIC INDUSTRIES, LTD., KYOTO UNIVERSITY
    Inventors: Chihiro Hiraiwa, Masatoshi Majima, Atsushi Yamaguchi, Naho Mizuhara, Tetsuya Uda, Donglin Han, Akiko Kuramitsu
  • Patent number: 9852751
    Abstract: This thin film magnetic head includes: a magnetic pole including an end surface exposed on an air bearing surface; and a heating element including a first branch and a second branch and configured to heat a vicinity of the magnetic pole. The first branch and the second branch each expand along a stacking surface and are coupled in parallel to each other. The stacking surface intersects the air bearing surface.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: December 26, 2017
    Assignee: TDK CORPORATION
    Inventors: Katsuki Kurihara, Atsushi Yamaguchi, Yosuke Antoku
  • Patent number: 9843659
    Abstract: A mobile electronic device includes: a housing; an acoustic-component contained in the housing; a sound hole formed in the housing, the sound hole being configured to allow communication between an inside and an outside of the housing; a non-breathable waterproof film disposed inside the housing, the waterproof film being configured to cover the sound hole; a compressible member compressed by being pressed against the housing during assembly of the acoustic-component to the housing, the compressible member being configured to form an acoustic-component chamber together with at least the waterproof film, the acoustic-component chamber being configured to hermetically seal the acoustic-component; and an opening configured to allow communication between an inside and an outside of the acoustic-component chamber within the housing, the opening being configured to allow air in the acoustic-component chamber to escape to the outside before the opening is closed in the process of compressing the compressible member.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: December 12, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Atsushi Yamaguchi, Shingo Yamaguchi