Abstract: A protocol chip and a communication conversion circuit are provided in a channel adapter package that is in charge of communications with a host. The communication conversion circuit communicates with the protocol chip using a procedure that conforms to a communication protocol. The communication conversion circuit communicates with a microprocessor using a procedure that is common to multiple communication protocols. It appears from the microprocessor as though communications are being carried out with the same type of channel adapter package.

Abstract: A protocol chip and a communication conversion circuit are provided in a channel adapter package that is in charge of communications with a host. The communication conversion circuit communicates with the protocol chip using a procedure that conforms to a communication protocol. The communication conversion circuit communicates with a microprocessor using a procedure that is common to multiple communication protocols. It appears from the microprocessor as though communications are being carried out with the same type of channel adapter package.

Abstract: A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

Abstract: A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: A photovoltaic device including a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a carbon atom concentration has a maximum peak in the vicinity of a p/n interface between the plurality of unit devices.

Abstract: A deposited film forming method and apparatus includes a belt-like member continuously conveyed through a film-forming chamber, one side of which is formed of the belt-like member. A reactive gas is introduced into the film-forming chamber, the interior of the film-forming chamber is evacuated, a high-frequency power induces a plasma therein, and a deposited film is formed on the belt-like member A discharge confining means is provided opposite to a deposited film forming side of the belt-like member to maintain constant contact with the belt-like member while it changes shape.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1×1018 atom/cm3 to 1×1020 atom/cm3, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.

Abstract: A source gas is fed into a discharge space of a reactor and an electric power is applied to generate discharge in the discharge space to decompose the source gas, thereby forming a deposited film. A plurality of discharge means are disposed in the reactor. In the deposited-film formation, the following steps are switched from one to another at a given timing: i) a first step of applying an electric power to a first discharge means to generate discharge to form the deposited film and ii) a second step of applying an electric power to a second discharge means to generate discharge to form the deposited film.

Abstract: The present invention provides a photovoltaic device including a plurality of unit devices stacked, each unit device consisting of a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a carbon atom concentration have maximum peaks in the vicinity of a p/n interface between the plurality of unit devices, thereby stabilizing the p/n interface and improving the interfacial characteristics and the film adhesion to attain a high photoelectric conversion efficiency of the photovoltaic device.

Abstract: The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1×1018 atom/cm3 to 1×1020 atom/cm3, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.

Abstract: Provided are a deposited film forming method and a deposited film forming apparatus capable of reducing discharge leakage and sparks and maintaining a stable discharge even with increase in conveyance speed, increase in film-forming speed, replacement of a roll, or the like. The deposited film forming method and apparatus is configured so that, while a belt-like member is continuously conveyed in a longitudinal direction thereof, the belt-like member is passed through a film-forming chamber, one side of which is formed of the belt-like member and which is placed in a vacuum-sealable reaction vessel, a reactive gas is introduced into the film-forming chamber, the interior of the film-forming chamber is evacuated by an evacuator to be maintained at a given pressure, a high-frequency power is introduced into the film-forming chamber to induce a plasma therein, and a deposited film is formed on the belt-like member passing through the film-forming chamber.

Abstract: To provide a deposited-film forming process and a deposited-film forming apparatus that may cause no scratches on the film forming surface to improve yield and enable stable discharge to thereby continuously form deposited films having uniform quality and uniform thickness, deposited films are formed by lengthwise continuously transporting a belt-like substrate so as to form a part of a discharge space, wherein the substrate is transported while bringing the transverse sectional shape of the substrate which forms a part of the discharge space into a curved shape by a roller.

Abstract: A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.

Abstract: A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.