Patents by Inventor Atsushi Yasuno

Atsushi Yasuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic elements and process and apparatus for their formation
    Patent number: 5589007
    Abstract: A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.
    Type: Grant
    Filed: September 5, 1995
    Date of Patent: December 31, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasushi Fujioka, Shotaro Okabe, Masahiro Kanai, Hideo Tamura, Atsushi Yasuno, Akira Sakai, Tadashi Hori