Abstract: A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammonium hydroxide), to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid.

Abstract: A substrate processing apparatus includes a substrate holding means that holds a substrate horizontally, a substrate rotating means that rotates a substrate held by the substrate holding means about a vertical rotation axis passing through the substrate, a discharging member that discharges a processing liquid toward the substrate, and a high-temperature processing liquid pipe that supplies a processing liquid of a temperature higher than that of the discharging member to the flow passage. The discharging member includes a plurality of discharge ports respectively disposed at a plurality of positions different in distance from the rotation axis and a flow passage connected sequentially to the plurality of discharge ports in order from outside to inside. The discharging member discharges a processing liquid supplied from the flow passage to the plurality of discharge ports from the plurality of discharge ports toward the substrate.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step of making liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, be discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

Abstract: A substrate treatment apparatus includes: a chamber; a substrate being treated with a treatment liquid in the chamber; a temperature measuring unit which measures an internal air temperature of the chamber and/or a temperature of the treatment liquid; a temperature adjusting unit which changes the internal air temperature and/or the temperature of the treatment liquid; a storage unit which stores a map defining a relationship between the air temperature and the treatment liquid temperature so that a treatment liquid temperature level for a given air temperature level is lower than the given air temperature level; and a temperature controlling unit which sets a target value of the internal air temperature of the chamber or the temperature of the treatment liquid based on the map and a measurement value detected by the temperature measuring unit, and controls the temperature adjusting unit based on the target value.

Abstract: A substrate processing apparatus includes a substrate holding means that holds a substrate horizontally, a substrate rotating means that rotates a substrate held by the substrate holding means about a vertical rotation axis passing through the substrate, a discharging member that discharges a processing liquid toward the substrate, and a high-temperature processing liquid pipe that supplies a processing liquid of a temperature higher than that of the discharging member to the flow passage. The discharging member includes a plurality of discharge ports respectively disposed at a plurality of positions different in distance from the rotation axis and a flow passage connected sequentially to the plurality of discharge ports in order from outside to inside. The discharging member discharges a processing liquid supplied from the flow passage to the plurality of discharge ports from the plurality of discharge ports toward the substrate.

Abstract: A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid.

Abstract: A substrate treatment apparatus includes: a chamber; a substrate being treated with a treatment liquid in the chamber; a temperature measuring unit which measures an internal air temperature of the chamber and/or a temperature of the treatment liquid; a temperature adjusting unit which changes the internal air temperature and/or the temperature of the treatment liquid; a storage unit which stores a map defining a relationship between the air temperature and the treatment liquid temperature so that a treatment liquid temperature level for a given air temperature level is lower than the given air temperature level; and a temperature controlling unit which sets a target value of the internal air temperature of the chamber or the temperature of the treatment liquid based on the map and a measurement value detected by the temperature measuring unit, and controls the temperature adjusting unit based on the target value.