Abstract: Methods and systems for mode converters for grating couplers may include a photonic chip comprising a waveguide, a grating coupler, and a mode converter, with the waveguide being coupled to the grating coupler via the mode converter. The mode converter may include waveguide material and tapers defined by tapered regions, where the tapered regions do not have waveguide material. The photonic chip may receive an optical signal in the mode converter from the waveguide, where the received optical signal has a light profile that may be spatially deflected in the mode converter to configure a desired profile in the grating coupler. A long axis of the tapers may be parallel to a direction of travel of the optical signal. The long axis of the tapers may point towards the input waveguide of the grating couplers, which may be linear.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses. The devices may be fabricated on semiconductor-on-insulator (SOI) wafers utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

Abstract: Methods and systems for a chip-on-wafer-on-substrate assembly are disclosed and may include in an optical communication system comprising an electronics die and a substrate. The electronics die is bonded to a first surface of a photonic interposer and the substrate is coupled to a second surface of the photonic interposer opposite to the first surface. An optical fiber and a light source assembly are coupled to the second surface of the interposer in one or more cavities formed in the substrate. A continuous wave (CW) optical signal may be received in the photonic interposer from the light source assembly, and a modulated optical signal may be communicated between the optical fiber and photonic interposer. The received CW optical signal may be coupled to an optical waveguide in the photonic interposer using a grating coupler.

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an optical communication system including a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.

Abstract: Methods and systems for silicon photonics wavelength division multiplexing transceivers are disclosed and may include, in a transceiver integrated in a silicon photonics chip: generating a first modulated output optical signal at a first wavelength utilizing a first electrical signal, generating a second modulated output optical signal at a second wavelength utilizing a second electrical signal, communicating the first and second modulated output optical signals into an optical fiber coupled to the chip utilizing a multiplexing grating coupler in the chip. A received input optical signal may be split into a modulated input optical signal at the first wavelength and a modulated input optical signal at the second wavelength utilizing a demultiplexing grating coupler in the chip. The first and second modulated input optical signals may be converted to first and second electrical input signals utilizing first and second photodetectors in the chip.

Abstract: Methods and systems for coupling a light source assembly to an optical integrated circuit are disclosed and may include a system comprising a laser source assembly having a laser, a rotator, and a mirror, where the laser source assembly is coupled to a die including an angled grating coupler and a waveguide. The system may generate an optical signal utilizing the laser, rotate the polarization of the optical signal utilizing the rotator, reflect the rotated optical signal onto the grating coupler on the die, and couple the optical signal to the waveguide, where an angle between a grating coupler axis that is parallel to the waveguide and a plane of incidence of the optical signal reflected to the angled grating coupler is non-zero. The angle between the grating coupler axis and the plane of incidence of the optical signal reflected to the angled grating coupler may be 45 degrees.

Abstract: Methods and systems for partial integration of wavelength division multiplexing and bi-directional solutions are disclosed and may include, an optical transceiver on a silicon photonics integrated circuit coupled to a planar lightwave circuit (PLC). The silicon photonics integrated circuit may include a first modulator and first light source that operates at a first wavelength and a second modulator and second light source that operates at a second wavelength. The transceiver and PLC are operable to modulate a first continuous wave (CW) optical signal from the first light source utilizing the first modulator and modulate a second CW optical signal from the second light source utilizing the second modulator. The modulated signals may be communicated from the modulators to the PLC utilizing a first pair of grating couplers in the IC and combined in the PLC.

Abstract: Methods and systems for stabilized directional couplers are disclosed and may include a system comprising first and second directional couplers formed by first and second waveguides, where one of the waveguides may comprise a length extender between the directional couplers. The directional couplers may be formed by reduced spacing between the waveguides on opposite sides of the length extender. An input optical signal may be communicated into one of the waveguides, where at least a portion of the input optical signal may be coupled between the waveguides in the first directional coupler and at least a portion of the coupled optical signal may be coupled between the waveguides in the second directional coupler. Optical signals may be communicated out of the system with magnitudes at a desired percentage of the input optical signal. The length extender may add phase delay for signals in one of the first and second waveguides.

Abstract: A system for integrated power combiners is disclosed and may include receiving optical signals in input optical waveguides and phase-modulating the signals to configure a phase offset between signals received at a first optical coupler, where the first optical coupler may generate output signals having substantially equal optical powers. Output signals of the first optical coupler may be phase-modulated to configure a phase offset between signals received at a second optical coupler, which may generate an output signal having an optical power of essentially zero and a second output signal having a maximized optical power. Optical signals received by the input optical waveguides may be generated utilizing a polarization-splitting grating coupler to enable polarization-insensitive combining of optical signals. Optical power may be monitored using optical detectors. The monitoring of optical power may be used to determine a desired phase offset between the signals received at the first optical coupler.

Abstract: Methods and systems for mode converters for grating couplers may include a photonic chip comprising a waveguide, a grating coupler, and a mode converter, with the waveguide being coupled to the grating coupler via the mode converter. The mode converter may include waveguide material and tapers defined by tapered regions, where the tapered regions do not have waveguide material. The photonic chip may receive an optical signal in the mode converter from the waveguide, where the received optical signal has a light profile that may be spatially deflected in the mode converter to configure a desired profile in the grating coupler. A long axis of the tapers may be parallel to a direction of travel of the optical signal. The long axis of the tapers may point towards the input waveguide of the grating couplers, which may be linear.

Abstract: Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in an integrated circuit, a multi-wavelength grating coupler, and first and second optical sources coupled to the integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical sources, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract: Methods and systems for grating couplers incorporating perturbed waveguides are disclosed and may include in a semiconductor photonics die, communicating optical signals into and/or out of the die utilizing a grating coupler on the die, where the grating coupler comprises perturbed waveguides. The perturbed waveguides may include rows of continuous waveguides with scatterers extending throughout a length of the perturbed waveguides a variable width along their length. The grating coupler may comprise a single polarization grating coupler comprising perturbed waveguides and a non-perturbed grating. The grating coupler may comprise a polarization splitting grating coupler (PSGC) that includes two sets of perturbed waveguides at a non-zero angle, or a plurality of non-linear rows of discrete shapes. The PSGC may comprise discrete scatterers at an intersection of the sets of perturbed waveguides. The grating coupler may comprise individual scatterers between the perturbed waveguides.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include in an optoelectronic transceiver comprising photonic and electronic devices from two complementary metal-oxide semiconductor (CMOS) die with different silicon layer thicknesses for the photonic and electronic devices, the CMOS die bonded together by metal contacts: communicating optical signals and electronic signals to and from said optoelectronic transceiver utilizing a received continuous wave optical signal as a source signal. A first of the CMOS die includes the photonic devices and a second includes the electronic devices. Electrical signals may be communicated between electrical devices to the optical devices utilizing through-silicon vias coupled to the metal contacts. The metal contacts may include back-end metals from a CMOS process. The electronic and photonic devices may be fabricated on SOI wafers, with the SOI wafers being diced to form the CMOS die.

Abstract: Methods and systems for silicon photonics wavelength division multiplexing transceivers are disclosed and may include, in a transceiver integrated in a silicon photonics chip: generating a first modulated output optical signal at a first wavelength utilizing a first electrical signal, generating a second modulated output optical signal at a second wavelength utilizing a second electrical signal, communicating the first and second modulated output optical signals into an optical fiber coupled to the chip utilizing a multiplexing grating coupler in the chip. A received input optical signal may be split into a modulated input optical signal at the first wavelength and a modulated input optical signal at the second wavelength utilizing a demultiplexing grating coupler in the chip. The first and second modulated input optical signals may be converted to first and second electrical input signals utilizing first and second photodetectors in the chip.