Patents by Inventor Atul Champaklal Ajmera

Atul Champaklal Ajmera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned silicide (salicide) process for strained silicon MOSFET on SiGe and structure formed thereby
    Publication number: 20030068883
    Abstract: A method of forming a semiconductor substrate (and resultant structure), includes providing a semiconductor substrate to be silicided including a source and drain formed therein on respective sides of a gate, depositing a metal film over the gate, source and drain regions, reacting the metal film with Si at a first predetermined temperature, to form a metal-silicon alloy, etching the unreacted metal, depositing a silicon film over the source drain and gate regions, annealing the substrate at a second predetermined temperature, to form a metal-Si2 alloy, and selectively etching the unreacted Si.
    Type: Application
    Filed: November 5, 2002
    Publication date: April 10, 2003
    Applicant: International Business Machines Corporation
    Inventors: Atul Champaklal Ajmera, Cyril Cabral, Roy Arthur Carruthers, Kevin Kok Chan, Guy Moshe Cohen, Paul Michael Kozlowski, Christian Lavoie, Joseph Scott Newbury, Ronnen Andrew Roy
  • Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
    Patent number: 6503833
    Abstract: A method of forming a semiconductor substrate (and resultant structure), includes providing a semiconductor substrate to be silicided including a source and drain formed therein on respective sides of a gate, depositing a metal film over the gate, source and drain regions, reacting the metal film with Si at a first predetermined temperature, to form a metal-silicon alloy, etching the unreacted metal, depositing a silicon film over the source drain and gate regions, annealing the substrate at a second predetermined temperature, to form a metal-Si2 alloy, and selectively etching the unreacted Si.
    Type: Grant
    Filed: November 15, 2000
    Date of Patent: January 7, 2003
    Assignee: International Business Machines Corporation
    Inventors: Atul Champaklal Ajmera, Cyril Cabral, Jr., Roy Arthur Carruthers, Kevin Kok Chan, Guy Moshe Cohen, Paul Michael Kozlowski, Christian Lavoie, Joseph Scott Newbury, Ronnen Andrew Roy