Patents by Inventor Atul Katoch

Atul Katoch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210287729
    Abstract: Word-line drivers, memories, and methods of operating word-line drivers are provided. A word-line driver coupled to an array of memory cells includes a decoder powered by a first power supply. The decoder is configured to decode an address to provide a plurality of word-line signals. The word-line driver also includes a plurality of output stages powered by a second power supply that is different than the first power supply. Each of the output stages includes a first transistor having a gate controlled by a first control signal and an inverter. The inverter is coupled between the first transistor and a ground and has an input coupled to the decoder to receive one of the word-line signals. The word-line driver also includes pull-down circuitry coupled between the gates of the first transistors and the ground and activated by a second control signal.
    Type: Application
    Filed: June 2, 2021
    Publication date: September 16, 2021
    Inventors: Ali Taghvaei, Atul Katoch
  • Publication number: 20210241825
    Abstract: Signal edge sharpener circuitry is operably connected to the word lines in a memory array to pull up a rising edge of a signal on the word line and/or to pull down a falling edge of the signal on the word line. Pulling the signal up and/or down reduces the amount of time the word line is asserted and reduces the amount of time between precharge operations.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 5, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Atul Katoch
  • Publication number: 20210201989
    Abstract: A memory device includes a memory array that includes one or more rows of memory cells and one or more columns of memory cells. The comparator circuitry is operably connected to at least one column of memory cells in the one or more columns of memory cells. The comparator circuitry includes a precompute circuit and a select circuit operably connected to the outputs of the precompute circuit. The precompute circuit is operable to precompute a comparison operation to produce a first precompute signal and a second precompute signal. The select circuit is operable to receive a first cell data signal from a memory cell in the column of memory cells. Based at least on the first cell data signal, the select circuit selects either the first precompute signal or the second precompute signal to output from the comparator circuitry as a signal read from the memory cell.
    Type: Application
    Filed: October 30, 2020
    Publication date: July 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jaspal Singh SHAH, Atul KATOCH
  • Patent number: 11031063
    Abstract: Word-line drivers, memories, and methods of operating word-line drivers are provided. A word-line driver coupled to an array of memory cells includes a decoder powered by a first power supply. The decoder is configured to decode an address to provide a plurality of word-line signals. The word-line driver also includes a plurality of output stages powered by a second power supply that is different than the first power supply. Each of the output stages includes a first transistor having a gate controlled by a first control signal and an inverter. The inverter is coupled between the first transistor and a ground and has an input coupled to the decoder to receive one of the word-line signals. The word-line driver also includes pull-down circuitry coupled between the gates of the first transistors and the ground and activated by a second control signal.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ali Taghvaei, Atul Katoch
  • Publication number: 20210166750
    Abstract: A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
    Type: Application
    Filed: February 15, 2021
    Publication date: June 3, 2021
    Inventors: Atul Katoch, Adrian Earle
  • Patent number: 10984854
    Abstract: Signal edge sharpener circuitry is operably connected to the word lines in a memory array to pull up a rising edge of a signal on the word line and/or to pull down a falling edge of the signal on the word line. Pulling the signal up and/or down reduces the amount of time the word line is asserted and reduces the amount of time between precharge operations.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: April 20, 2021
    Inventor: Atul Katoch
  • Publication number: 20210098052
    Abstract: A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. A first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. A global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. A bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.
    Type: Application
    Filed: September 2, 2020
    Publication date: April 1, 2021
    Inventors: Atul Katoch, Sahil Preet Singh
  • Publication number: 20210098050
    Abstract: Signal edge sharpener circuitry is operably connected to the word lines in a memory array to pull up a rising edge of a signal on the word line and/or to pull down a falling edge of the signal on the word line. Pulling the signal up and/or down reduces the amount of time the word line is asserted and reduces the amount of time between precharge operations.
    Type: Application
    Filed: October 1, 2019
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Atul Katoch
  • Patent number: 10923184
    Abstract: An SRAM device has a voltage input terminal configured to receive a first signal at a first voltage level. A level shifter is connected to the voltage input terminal to receive the first signal, and the level shifter is configured to output a second signal at a second voltage level higher than the first voltage level. A memory cell has a word line and a bit line. The word line is connected to the output terminal of the level shifter to selectively receive the second signal at the second voltage level, and the bit line is connected to the voltage input terminal to selectively receive the first signal at the first voltage level. A sense amplifier is connected to the bit line and is configured to provide an output of the memory cell. The sense amplifier has a sense amplifier input connected to the output terminal of the level shifter to selectively receive the second signal at the second voltage level.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: February 16, 2021
    Inventors: Sanjeev Kumar Jain, Atul Katoch
  • Patent number: 10923182
    Abstract: A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: February 16, 2021
    Inventors: Atul Katoch, Adrian Earle
  • Publication number: 20210005232
    Abstract: A memory device Input/Output includes a memory cell having a local bit line. A first IO circuit is coupled to the local bit line and is configured to output a local IO signal to a global bit line. A second IO circuit is coupled to the global bit line and is configured to output a global IO signal. A latch circuit is configured to latch the local IO signal in response to a data signal on the local bit line.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Atul Katoch, Ali Taghvaei
  • Patent number: 10878867
    Abstract: A circuit includes a plurality of memory cells, a first tracking word line driver, and a second tracking word line driver. The first tracking word line driver outputs a first signal in response to a first region of the plurality of memory cells being accessed, the first signal having a first pulse width. The second tracking word line driver outputs a second signal in response to a second region of the plurality of memory cells being accessed, the second signal having a second pulse width, the second pulse width being different from the first pulse width.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Atul Katoch, Hyunsung Hong
  • Patent number: 10789994
    Abstract: A memory macro includes: word lines; memory cells arranged in an array, the array including rows and columns, the rows corresponding to the word lines, each memory cell being configured to receive a first reference voltage, and each column having voltage supply nodes corresponding to corresponding ones of the memory cells in the column; and switching circuits corresponding to the columns, each switching circuit being configured to selectively provide a first voltage value of a first voltage source or a second voltage value of a second voltage source to the voltage supply nodes; and wherein the first and second voltage values differ by a predetermined voltage value; each of the first and second voltage values is different than a second reference supply voltage; and the word lines are configured to receive the second voltage value as a voltage value representing a high logical value of the word lines.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Atul Katoch, Cormac Michael O'Connell
  • Patent number: 10783938
    Abstract: A memory device Input/Output includes a memory cell having a local bit line. A first IO circuit is coupled to the local bit line and is configured to output a local IO signal to a global bit line. A second IO circuit is coupled to the global bit line and is configured to output a global IO signal. A latch circuit is configured to latch the local IO signal in response to a data signal on the local bit line.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Atul Katoch, Ali Taghvaei
  • Publication number: 20200293417
    Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I. ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
  • Publication number: 20200286541
    Abstract: Word-line drivers, memories, and methods of operating word-line drivers are provided. A word-line driver coupled to an array of memory cells includes a decoder powered by a first power supply. The decoder is configured to decode an address to provide a plurality of word-line signals. The word-line driver also includes a plurality of output stages powered by a second power supply that is different than the first power supply. Each of the output stages includes a first transistor having a gate controlled by a first control signal and an inverter. The inverter is coupled between the first transistor and a ground and has an input coupled to the decoder to receive one of the word-line signals. The word-line driver also includes pull-down circuitry coupled between the gates of the first transistors and the ground and activated by a second control signal.
    Type: Application
    Filed: May 27, 2020
    Publication date: September 10, 2020
    Inventors: Ali Taghvaei, Atul Katoch
  • Patent number: 10770122
    Abstract: A device for providing gated data signals includes a delay path configured to receive an input signal and output the input signal that is delayed from the input signal by a time interval; a gating signal generator configured to supply a gating signal; a gating circuit configured to receive the data signal from the delay path at the data input, receive the gating signal at the gating input, and output at the data output an output signal indicative of the received data signal when the gating signal is present at the gating input; and a delay controller configured to receive a variable delay control signal and set the delay time interval according to the delay control signal.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Atul Katoch, Sanjeev Kumar Jain, Marcin Dziok
  • Patent number: 10705934
    Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: July 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hung Chang, Atul Katoch, Chia-En Huang, Ching-Wei Wu, Donald G. Mikan, Jr., Hao-I Yang, Kao-Cheng Lin, Ming-Chien Tsai, Saman M. I. Adham, Tsung-Yung Chang, Uppu Sharath Chandra
  • Patent number: 10699766
    Abstract: Word-line drivers, memories, and methods of operating word-line drivers are provided. A word-line driver coupled to an array of memory cells includes a decoder powered by a first power supply. The decoder is configured to decode an address to provide a plurality of word-line signals. The word-line driver also includes a plurality of output stages powered by a second power supply that is different than the first power supply. Each of the output stages includes a first transistor having a gate controlled by a first control signal and an inverter. The inverter is coupled between the first transistor and a ground and has an input coupled to the decoder to receive one of the word-line signals. The word-line driver also includes pull-down circuitry coupled between the gates of the first transistors and the ground and activated by a second control signal.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ali Taghvaei, Atul Katoch
  • Publication number: 20200075085
    Abstract: A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
    Type: Application
    Filed: August 20, 2019
    Publication date: March 5, 2020
    Inventors: Atul Katoch, Adrian Earle