Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A projection objective for imaging a pattern arranged in an object surface of the projection objective onto an image surface of the projection objective using ultraviolet radiation has a plurality of optical elements including transparent optical elements transparent for radiation at an operating wavelength ?, where 260 nm>?>150 nm, an image-side pupil surface arranged between the object surface and the image surface, and an aperture-defining lens group arranged between the image-side pupil surface and the image surface for converging radiation coming from the image-side pupil surface towards the image surface to define an image-side numerical aperture NA, where 0.7?NA?1.4. The aperture-defining lens group includes at least one high-index lens made from a transparent high-index material having a refractive index nHI, where nHI>nSIO2 and where nSIO2 is the refractive index of silicon dioxide (SiO2) at the operating wavelength.

Abstract: An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.

Abstract: In a catadioptric projection objective for imaging a pattern of a mask arranged in an object surface (as) of the projection objective into an image field arranged in the image surface (IS) of the projection objective, with a demagnifying imaging scale, having at least one concave mirror (CM) and at least one intermediate image, the object plane and the image plane are originated parallel to one another. A deflection system (DS) for deflecting bundles of rays from one part of the projection objective into another part of the projection objective is arranged between the object plane and the image plane. The deflection system contains an image rotating reflection device which is designed to effect an image rotation through 180° by multiple reflection at planar reflection surfaces situated at an angle with respect to one anther, whereby the imaging scale has the same sign in two planes perpendicular to an optical axis and perpendicular to one another.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Abstract: In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ? i = 1 k ? ? ? i ? ? V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, ?i is a refractive power in mm?1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.

Abstract: A catadioptric projection objective for imaging of a pattern, which is arranged on the object plane of the projection objective, on the image plane of the projection objective has a first objective part for imaging of an object field to form a first real intermediate image, a second objective part for production of a second real intermediate image using the radiation coming from the first objective part; and a third objective part for imaging of the second real intermediate image on the image plane. The second objective part is a catadioptric objective part with a concave mirror A first folding mirror for deflection of the radiation coming from the object plane in the direction of the concave mirror and a second folding mirror for deflection of the radiation coming from the concave mirror in the direction of the image plane are provided.

Abstract: In some embodiments, the disclosure provides a projection lens configured to configured to image radiation from an object plane of the projection lens to an image plane of the projection lens. The projection lens can, for example, be used in a microlithographic projection exposure apparatus. The projection lens includes a last lens on the image plane side. The last lens includes at least one intrinsically birefringent material. The material can be, for example, magnesium oxide, a garnet, lithium barium fluoride and/or a spinel. The last lens can have a thickness d which satisfies the condition 0.8*y0, max<d<1.5*y0, max, where y0, max denotes the maximum distance of an object field point from the optical axis.

Abstract: The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.

Abstract: A projection exposure lens has an object plane, optical elements for separating beams, a concave mirror, an image plane, a first lens system arranged between the object plane and the optical elements for separating beams, a second double pass lens system arranged between the optical elements for separating beams and the concave mirror, a third lens system arranged between the optical elements for separating beams and the image plane. The second lens system has a maximum of five lenses.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.