Abstract: An electronic device can include a substrate having a primary surface; a monocrystalline semiconductor film overlying the primary surface of the substrate; and a polycrystalline compound semiconductor layer adjacent to the monocrystalline semiconductor film. In an embodiment, the polycrystalline compound semiconductor layer has a dopant concentration at most 1×1016 atoms/cm3, a donor concentration of greater than 1×1017 donors/cm3, and is part of a contact of an electrode of a transistor. In another embodiment, the electronic device can further include an interconnect over the polycrystalline compound semiconductor layer, wherein a combination of the interconnect and polycrystalline compound semiconductor layer form an ohmic contact. In a further embodiment, a polycrystalline compound semiconductor layer can be adjacent to the monocrystalline semiconductor film, wherein an energy level of a conduction band of the polycrystalline compound semiconductor layer is lower than its Fermi energy level.