Abstract: A High Electron Mobility Transistor (HEMT) device can include an AlN buffer layer on a substrate and an epi-GaN channel layer on the AlN buffer layer. An AlN barrier layer can be on the Epi-GaN channel layer to provide a channel region in the epi-GaN channel layer. A GaN drain region can be recessed into the epi-GaN channel layer at a first end of the channel region and a GaN source region can be recessed into the epi-GaN channel layer at a second end of the channel region opposite the first end of the channel region. A gate electrode can include a neck portion with a first width that extends a first distance above the AlN barrier layer between the GaN drain region and the GaN source region to a head portion of the gate electrode having a second width that is greater than the first width.

Abstract: A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire-n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.

Abstract: Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, the shift to the aluminum nitride (AlN) platform is disclosed. AlN allows for smarter, highly-scaled heterostructure design that improves the output power and thermal management of GaN amplifiers. Beyond improvements over the incumbent amplifier technology, AlN allows for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with aluminum nitride. It is on this AlN platform that nitride electronics may maximize their full high-power, highspeed potential for mm-wave communication and high-power logic applications.

Abstract: A High Electron Mobility Transistor (HEMT) device can include an AlN buffer layer on a substrate and an epi-GaN channel layer on the AlN buffer layer. An AlN barrier layer can be on the Epi-GaN channel layer to provide a channel region in the epi-GaN channel layer. A GaN drain region can be recessed into the epi-GaN channel layer at a first end of the channel region and a GaN source region can be recessed into the epi-GaN channel layer at a second end of the channel region opposite the first end of the channel region. A gate electrode can include a neck portion with a first width that extends a first distance above the AlN barrier layer between the GaN drain region and the GaN source region to a head portion of the gate electrode having a second width that is greater than the first width.