Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

Abstract: Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source.

Abstract: A method of forming a film structure (e.g., film stacks) comprising titanium (Ti) and/or titanium nitride (TiN). The Ti film structure is formed by alternately depositing and then plasma treating thin films (less than about 100 Å thick) of titanium. The TiN film structure is formed by alternately depositing and then plasma treating thin films (less than about 300 Å thick) of titanium nitride. The titanium films are formed using a plasma reaction of titanium tetrachloride (TiCl4) and a hydrogen-containing gas. The titanium nitride films are formed by thermally reacting titanium tetrachloride with a nitrogen-containing gas. The subsequent plasma treatment steps comprise a nitrogen/hydrogen-containing plasma.

Abstract: Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.

Abstract: In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiCl4 gas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NH3 gas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiCl4 gas and the NH3 gas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.

Abstract: Generally, a substrate processing apparatus is provided. In one aspect of the invention, a substrate processing apparatus is provided. In one embodiment, the substrate processing apparatus includes one or more chamber bodies coupled to a gas distribution system. The chamber bodies define at least a first processing region and a second processing region within the chamber bodies. The gas distribution system includes a first, a second and a third gas supply circuit. The first gas supply circuit is teed between the first and second processing regions and is adapted to supply a first processing gas thereto. The second gas supply circuit is coupled to the first processing region and adapted to supply a second process gas thereto. The third gas supply circuit is coupled to the second processing region and is adapted to supply a third process gas thereto. Alternatively, the processing regions may be disposed in a single chamber body.

Abstract: A method of forming a film structure (e.g., film stack) comprising titanium (Ti) and titanium nitride (TiN) films is disclosed. In one aspect of the invention, a titanium silicide (TiSix) layer is formed on a Ti film, followed by deposition of a TiN film on the TiSix layer. The TiSix layer protects the underlying Ti film from chemical attack by TiCl4-based chemistry during subsequent TiN layer deposition. In another aspect of the invention, a cap layer of TiN is deposited between the Ti and TiN layers of a Ti/TiN film structure. The TiN cap layer inhibits chlorine migration from the overlying TiN layer into an underlying contact region, such as, for example, the source or drain of a transistor.

Abstract: A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.