Patents by Inventor Avgerinos Gelatos
Avgerinos Gelatos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336227Abstract: Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Inventors: TAKASHI KURATOMI, AVGERINOS GELATOS, TAE HONG HA, XUESONG LU, SZUHENG HO, WEI LEI, MARK LEE, RAYMOND HUNG, XIANMIN TANG
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Patent number: 11424132Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.Type: GrantFiled: October 2, 2019Date of Patent: August 23, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Takashi Kuratomi, Avgerinos Gelatos, Tae Hong Ha, Xuesong Lu, Szuheng Ho, Wei Lei, Mark Lee, Raymond Hung, Xianmin Tang
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Publication number: 20200144073Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.Type: ApplicationFiled: October 2, 2019Publication date: May 7, 2020Inventors: TAKASHI KURATOMI, AVGERINOS GELATOS, TAE HONG HA, XUESONG LU, SZUHENG HO, WEI LEI, MARK LEE, RAYMOND HUNG, XIANMIN TANG
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Patent number: 8927423Abstract: Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.Type: GrantFiled: December 14, 2012Date of Patent: January 6, 2015Assignee: Applied Materials, Inc.Inventors: Xinyu Fu, Wei Tang, Kavita Shah, Srinivas Gandikota, San H. Yu, Avgerinos Gelatos
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Publication number: 20130157460Abstract: Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.Type: ApplicationFiled: December 14, 2012Publication date: June 20, 2013Inventors: Xinyu Fu, Wei Tang, Kavita Shah, Srinivas Gandikota, San H. Yu, Avgerinos Gelatos
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Patent number: 7779784Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.Type: GrantFiled: June 6, 2005Date of Patent: August 24, 2010Assignee: Applied Materials, Inc.Inventors: Chen-An Chen, Avgerinos Gelatos, Michael X. Yang, Ming Xi, Mark M. Hytros
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Patent number: 7605083Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.Type: GrantFiled: May 28, 2008Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Publication number: 20080227291Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.Type: ApplicationFiled: May 28, 2008Publication date: September 18, 2008Inventors: KEN K. LAI, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 7384867Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: GrantFiled: August 18, 2005Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Publication number: 20070095285Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.Type: ApplicationFiled: December 19, 2006Publication date: May 3, 2007Inventors: Randhir Thakur, Alfred Mak, Ming Xi, Walter Glenn, Ahmad Khan, Ayad Al-Shaikh, Avgerinos Gelatos, Salvador Umotoy
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Publication number: 20060251801Abstract: Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device. In general the method includes a novel method of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer. The processes discussed below are less complex and less time consuming than other conventional contact level interconnect formation processes and thus will have an improved device yield.Type: ApplicationFiled: March 20, 2006Publication date: November 9, 2006Inventors: Timothy Weidman, Srinivas Gandikota, Michael Stewart, Avgerinos Gelatos, Arulkumar Shanmugasundram
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Publication number: 20060251800Abstract: Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process.Type: ApplicationFiled: March 20, 2006Publication date: November 9, 2006Inventors: Timothy Weidman, Kapila Wijekoon, Zhize Zhu, Avgerinos Gelatos, Amit Khandelwal, Arulkumar Shanmugasundram, Michael Yang, Fang Mei, Farhad Moghadam
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Publication number: 20060246217Abstract: Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.Type: ApplicationFiled: March 20, 2006Publication date: November 2, 2006Inventors: Timothy Weidman, Michael Stewart, Zhize Zhu, Arulkumar Shanmugasundram, Srinivas Gandikota, Avgerinos Gelatos
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Publication number: 20060128150Abstract: In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.Type: ApplicationFiled: December 10, 2004Publication date: June 15, 2006Inventors: Srinivas Gandikota, Madhu Moorthy, Amit Khandelwal, Avgerinos Gelatos, Mei Chang, Kavita Shah, Seshadri Ganguli
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Publication number: 20060075966Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.Type: ApplicationFiled: June 6, 2005Publication date: April 13, 2006Inventors: Chen-An Chen, Avgerinos Gelatos, Michael Yang, Ming Xi, Mark Hytros
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Patent number: 6998014Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.Type: GrantFiled: July 16, 2002Date of Patent: February 14, 2006Assignee: Applied Materials, Inc.Inventors: Chen-An Chen, Avgerinos Gelatos, Michael X. Yang, Ming Xi, Mark M. Hytros
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Publication number: 20050287807Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: ApplicationFiled: August 18, 2005Publication date: December 29, 2005Inventors: Ken Lai, Jeong Byun, Frederick Wu, Ramanujapuran Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok Sinha, Hua Chung, Hongbin Fang, Alfred Mak, Michael Yang, Ming Xi
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Publication number: 20050194374Abstract: A substrate support comprises a ceramic block, ceramic coating, resistance heater, and heater leads. The ceramic block comprises a first ceramic material and has a substrate receiving pocket sized to receive a substrate, a peripheral ledge extending about the substrate receiving pocket, and side surfaces. The ceramic coating comprises a second ceramic material and covers the substrate pocket and peripheral ledge of the ceramic block. In one version, the second ceramic material is composed of a silicon nitride compound. In another version, the second ceramic material is composed of an amorphous Si—H—N—O compound.Type: ApplicationFiled: March 2, 2004Publication date: September 8, 2005Inventors: Avgerinos Gelatos, Olkan Cuvalci, Tong Zhang, Chen-An Chen
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Patent number: 6939804Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: GrantFiled: November 18, 2002Date of Patent: September 6, 2005Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 6827815Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.Type: GrantFiled: January 15, 2002Date of Patent: December 7, 2004Assignee: Applied Materials, Inc.Inventors: Mark M. Hytros, Truc T. Tran, Hongbee Teoh, Lawrence Chung-Lai Lei, Avgerinos Gelatos, Salvador P. Umotoy