Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: A process for treating refractory metal-boron layers deposited by atomic layer deposition resulting in the formation of a ternary amorphous refractory metal-nitrogen-boron film is disclosed. The resulting ternary film remains amorphous following thermal annealing at temperatures up to 800° C. The ternary films are formed following thermal annealing in a reactive nitrogen-containing gas. Subsequent processing does not disrupt the amorphous character of the ternary film. arrangement where a blended solution is supplied to a remote point of use.

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: In one embodiment, a copper interconnect structure is formed by depositing a dielectric layer (28) on a semiconductor substrate (10). The dielectric layer (28) is then patterned to form interconnect openings (29). A layer of copper (34) is then formed within the interconnect openings (29). A portion of the copper layer (34) is then removed to form copper interconnects (39) within the interconnect openings (29). A copper barrier layer (40) is then formed overlying the copper interconnects (39). Adhesion between the copper barrier layer (40) and the copper interconnects (39) is improved by exposing the exposed surface of the copper interconnects (39) to a plasma generated using only ammonia as a source gas.

Abstract: A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided. The metallization structure includes an interface layer (22) intermediate to a dielectric layer (12), and a copper interconnect (30). The interface layer (22) functions to adhere the copper interconnect (30) to a device substrate (10) and to prevent the diffusion of copper into underlying dielectric layers. The interconnect layer (22) is fabricated by depositing a first titanium layer (16) followed by the sequential deposition of a titanium nitride layer (18), and a second titanium layer (20). A copper layer (24) is deposited to overlie the second titanium layer (20) and an annealing step is carried out to form a copper-titanium intermetallic layer (26).

Abstract: A non-silyated, ternary boron nitride film (18, 38) is provided for semiconductor device applications. The non-silyated, ternary boron nitride film is preferably formed by plasma-enhanced chemical vapor deposition using non-silyated compounds of boron, nitrogen, and either oxygen, germanium, germanium oxide, fluorine, or carbon. In one embodiment, boron oxynitride (BNO) is deposited in a plasma-enhanced chemical vapor deposition reactor using ammonia (NH.sub.3), diborane (B.sub.2 H.sub.6), and nitrous oxide (N.sub.2 O). The BNO film has a dielectric constant of about 3.3 and exhibits a negligible removal rate in a commercial polishing apparatus. Because of its low dielectric constant and high hardness, the ternary boron nitride film formed in accordance with the invention can be advantageously used as a polish-stop layer and as a interlevel dielectric layer in a semiconductor device.

Abstract: Metallization having a self-aligned diffusion barrier or seed layer is formed in an integrated circuit. In one embodiment of the invention, a sacrificial material (20) is used to define a seed layer (24). A dielectric layer (26) is then formed and the sacrificial material (20) is subsequently removed to expose the underlying seed layer (24). A conductive layer of material (32), such as copper, is then selectively deposited onto the seed layer (24). Because the diffusion barrier or seed layer is self-aligned the metal to metal spacing in an integrated circuit may be reduced. Therefore, integrated circuits having high device packing densities can be fabricated.

Abstract: In a polish palnarization process using a polishing apparatus and an abrasive slurry, a boron nitride (BN) polish stop layer (18) is provided to increase the polish selectivity. The BN layer deposited in accordance with the invention has a hexagonal-close-pack crystal orientation and is characterized by chemical inertness and high hardness. The BN layer has a negligible polish removal rate yielding extremely high polish selectivity when used as a polish stop for polishing a number of materials commonly used in the fabrication of semiconductor devices. In accordance with the invention, a substrate (12) is provided having an uneven topography including elevated regions and recessed regions. A BN polish stop layer (18) is desposited to overlie the substrate (12) and a fill material (20, 36) which can be dielectric material or a conductive material, is deposited to overlie the BN polish stop (18) and the recessed regions of the substrate.