Abstract: Methods and systems disclosed herein describe a canonical model that sets forth a standardized schema that represents data entities and their relationships as a logical data structure across multiple business units. A schema validator module may validate application-specific schema against the canonical module. Additionally, legacy and/or existing applications may be upgraded, through a transformation module, to comply with the canonical model. The transformation module may transform application-specific data and/or information to the standardized schema, and vice versa, to ensure that legacy and/or existing applications may communicate with applications and/or processing engines that comply with the standardized schema.

Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Abstract: Described are a system, method, and computer program product for segmenting a plurality of accounts. The method includes processing transaction data for a plurality of transactions conducted by a plurality of accounts using a plurality of account identifiers, the transaction data for each transaction including data identifying the transaction as an electronic transaction or a physical transaction, segmenting the plurality of accounts into at least two groups including an active customer group and an inactive customer group based on the transaction data for each transaction conducted by each of the plurality of accounts, determining a third subset of customers from the second subset of customers based on at least one predicative model and a transaction profile of each customer of the second subset of customers, and automatically enrolling the third subset of customers into an automated campaign.

Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.

Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.

Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.

Abstract: Methods and systems disclosed herein describe deploying a plurality of microservices to calculate an insurance rate. The plurality of microservices may operate in parallel to calculate a plurality of partial rates that are combined (e.g., added up) to determine the insurance rate. During the calculating steps, one or more rating factors may be cached and/or stored. The plurality of microservices may reduce the time and/or resources required by a processor to calculate an insurance rate, while the stored rating factors may be displayed to the user to provide greater transparency into how the insurance rate was calculated.

Abstract: A method, system, and apparatus for segmenting users based on transaction activity and propensity for conducting portable financial device transactions. The method includes: determining a subset of transaction data categories from a plurality of transaction data categories; ranking the subset of transaction data categories into at least one order; generating a predictive model for determining user propensity for prospectively increasing a frequency of portable financial device transactions based at least partially on the ranking of the at least one subset of transaction data categories; analyzing transaction data for portable financial device transactions initiated by each user of a plurality of users; generating at least one subset of users of the plurality of users; and automatically initiating a conversion action.

Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

Abstract: A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.

Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

Abstract: A hydroconversion process is disclosed, including contacting of hydrogen and a residuum hydrocarbon with a pre-conditioned and at least partially sulfided hydroconversion catalyst for converting at least a portion of the residuum hydrocarbon into at least one of a hydrotreated product and a hydrocracked product.

Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

Abstract: In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.