Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Abstract: A system that includes a non-volatile memory subsystem having non-volatile memory. The system also includes a plurality of memory modules that are separate from the non-volatile memory subsystem. Each memory module can include a plurality of random access memory packages where each first random access memory package includes a primary data port and a backup data port. Each memory module can include a storage interface circuit coupled to the backup data ports of the random access memory packages. The storage interface circuit offloads data from the memory module in the event of a power loss by receiving data from the backup data ports of the random access memory packages and transmitting the data to the non-volatile memory subsystem.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Abstract: Disclosed are techniques for a power management integrated circuit (PMIC) to support a power-up sequence from a powered-down state to a powered-up state when both a main supply voltage and a backup supply voltage are present or when only the backup supply voltage is present. The PMIC may monitor the two supply voltages to identify the supply voltages that are present. The PMIC may be configured with a power-up initialization mode of operation through an EFUSE/MTP register, including a first bit to control power up of a voltage regulator of the PMIC with the main supply voltage or the backup supply voltage. Another bit may control power up of the voltage regulator with the backup supply voltage in the dual-supply or the single-supply configuration. The PMIC may execute one of four power-up sequences based on the monitored status of the supply voltages and the configured power-up initialization mode of operation.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: A serial presence detect (SPD) device includes nonvolatile memory to store SPD information. Parity information suitable for single error correct and double error detect (SEC-DED) is also stored in association with the SPD information in the nonvolatile memory. The combination of SPD information and parity information is organized into codewords addressable at each memory location. During an initialization period occurring after a power on reset and before the SPD device is accepting I2C commands, the SPD device checks each memory location (codeword) for errors. Each error detected is counted to provide an indicator of device health. Before the initialization period expires, the SPD device writes a corrected codeword back to the nonvolatile memory.

Abstract: A serial presence detect (SPD) device includes a region of nonvolatile memory for SPD data and an additional region for other (e.g., vendor) use. The additional region may be subdivided into write protect regions that can be individually and independently write protected. To configure the write protection, a password key scheme is used to enter a mode whereby the write protection attributes may be configured. Another password key scheme is used to exit the write protection configuration mode.

Abstract: A power-management integrated circuit (PMIC) is installed on a memory module to optimize power use among a collection of memory devices. The PMIC includes external power-supply nodes that receive relatively high and low supply voltages. Depending on availability, the PMIC uses one or both of these supply voltages to generate a managed supply voltage for powering the memory devices. The PMIC selects between operational modes for improved efficiency in dependence upon the availability of one or both externally provided supply voltages.

Abstract: A buffer chip includes a first set of input/output (I/O) pins a second set of I/O pins, and is configurable to operate in one of a first mode or a second mode. The first set of I/O pins and the second set of I/O pins are configured to convey first signals between the buffer chip and one or more volatile memory devices on a memory module when the buffer chip is configured to operate in the first mode. The first set of I/O pins is configured to convey the first signals between the buffer chip and the one or more volatile memory devices and the second set of I/O pins is configured to convey second signals between more non-volatile memory devices on the memory module when the buffer chip is configured to operate in the second mode.

Abstract: A system that includes a non-volatile memory subsystem having non-volatile memory. The system also includes a plurality of memory modules that are separate from the non-volatile memory subsystem. Each memory module can include a plurality of random access memory packages where each first random access memory package includes a primary data port and a backup data port. Each memory module can include a storage interface circuit coupled to the backup data ports of the random access memory packages. The storage interface circuit offloads data from the memory module in the event of a power loss by receiving data from the backup data ports of the random access memory packages and transmitting the data to the non-volatile memory subsystem.

Abstract: A system that includes a non-volatile memory subsystem having non-volatile memory. The system also includes a plurality of memory modules that are separate from the non-volatile memory subsystem. Each memory module can include a plurality of random access memory packages where each first random access memory package includes a primary data port and a backup data port. Each memory module can include a storage interface circuit coupled to the backup data ports of the random access memory packages. The storage interface circuit offloads data from the memory module in the event of a power loss by receiving data from the backup data ports of the random access memory packages and transmitting the data to the non-volatile memory subsystem.

Abstract: Disclosed herein are techniques for implementing hybrid memory modules with improved inter-memory data transmission paths. The claimed embodiments address the problem of implementing a hybrid memory module that exhibits improved transmission latencies and power consumption when transmitting data between DRAM devices and NVM devices (e.g., flash devices) during data backup and data restore operations. Some embodiments are directed to approaches for providing a direct data transmission path coupling a non-volatile memory controller and the DRAM devices to transmit data between the DRAM devices and the flash devices. In one or more embodiments, the DRAM devices can be port switched devices, with a first port coupled to the data buffers and a second port coupled to the direct data transmission path. Further, in one or more embodiments, such data buffers can be disabled when transmitting data between the DRAM devices and the flash devices.

Abstract: Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Abstract: A buffer chip includes a first set of input/output (I/O) pins a second set of I/O pins, and is configurable to operate in one of a first mode or a second mode. The first set of I/O pins and the second set of I/O pins are configured to convey first signals between the buffer chip and one or more volatile memory devices on a memory module when the buffer chip is configured to operate in the first mode. The first set of I/O pins is configured to convey the first signals between the buffer chip and the one or more volatile memory devices and the second set of I/O pins is configured to convey second signals between more non-volatile memory devices on the memory module when the buffer chip is configured to operate in the second mode.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Abstract: In a memory module, encryption information is received from an external source and stored exclusively within a non-persistent storage element such that the encryption information is expunged from the memory module upon power loss. Write data is received and encrypted using the encryption information stored within the non-persistent storage element to produce encrypted data which is stored, in turn, within a nonvolatile storage of the memory module.