Patents by Inventor Aya Anzai
Aya Anzai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10367124Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.Type: GrantFiled: March 13, 2018Date of Patent: July 30, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kaoru Tsuchiya, Aya Anzai, Masayuki Sakakura, Masaharu Nagai, Yutaka Matsuda
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Publication number: 20190221627Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20190221628Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20180315370Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: ApplicationFiled: July 5, 2018Publication date: November 1, 2018Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Patent number: 10062742Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: GrantFiled: December 18, 2017Date of Patent: August 28, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Yoshifumi Tanada, Mitsuaki Osame, Aya Anzai, Ryota Fukumoto
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Publication number: 20180204988Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.Type: ApplicationFiled: March 13, 2018Publication date: July 19, 2018Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kaoru Tsuchiya, Aya Anzai, Masayuki Sakakura, Masaharu Nagai, Yutaka Matsuda
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Patent number: 10019935Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: GrantFiled: June 29, 2017Date of Patent: July 10, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20180190745Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: February 13, 2018Publication date: July 5, 2018Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20180122884Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: ApplicationFiled: December 18, 2017Publication date: May 3, 2018Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Yoshifumi TANADA, Mitsuaki OSAME, Aya ANZAI, Ryota FUKUMOTO
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Patent number: 9923127Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.Type: GrantFiled: May 9, 2014Date of Patent: March 20, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kaoru Tsuchiya, Aya Anzai, Masayuki Sakakura, Masaharu Nagai, Yutaka Matsuda
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Patent number: 9905624Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: February 15, 2017Date of Patent: February 27, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20180026153Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving This are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: August 9, 2017Publication date: January 25, 2018Inventors: Mitsuaki OSAME, Aya ANZAI, Jun KOYAMA, Makoto UDAGAWA, Masahiko HAYAKAWA, Shunpei YAMAZAKI
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Publication number: 20180019292Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: ApplicationFiled: June 29, 2017Publication date: January 18, 2018Inventors: Mitsuaki OSAME, Aya ANZAI, Yu YAMAZAKI, Ryota FUKUMOTO
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Patent number: 9859353Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: GrantFiled: March 18, 2016Date of Patent: January 2, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Yoshifumi Tanada, Mitsuaki Osame, Aya Anzai, Ryota Fukumoto
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Publication number: 20170301285Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: ApplicationFiled: June 29, 2017Publication date: October 19, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20170213505Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame
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Patent number: 9698207Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: GrantFiled: March 28, 2016Date of Patent: July 4, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yu Yamazaki, Ryota Fukumoto
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Patent number: 9697772Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: GrantFiled: September 21, 2016Date of Patent: July 4, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20170162642Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: February 15, 2017Publication date: June 8, 2017Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 9646531Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: GrantFiled: March 21, 2008Date of Patent: May 9, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame