Patents by Inventor Aya Anzai
Aya Anzai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9613565Abstract: An object of the present invention is to provide a light emitting device that is able to suppress power consumption while a balance of white light is kept, without making a configuration of a power source circuit complicated. A power source potential corresponding to each color of a light emitting element is used as a higher electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is a p-channel TFT. Conversely, a power source potential corresponding to each color of a light emitting element is used as a lower electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is an n-channel TFT.Type: GrantFiled: January 3, 2008Date of Patent: April 4, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Ryota Fukumoto
-
Publication number: 20170054934Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.Type: ApplicationFiled: November 9, 2016Publication date: February 23, 2017Inventors: Shunpei YAMAZAKI, Satoshi MURAKAMI, Motomu KURATA, Hiroyuki HATA, Mitsuhiro ICHIJO, Takashi OHTSUKI, Aya ANZAI, Masayuki SAKAKURA
-
Patent number: 9577016Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: June 4, 2015Date of Patent: February 21, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
-
Publication number: 20170011686Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: ApplicationFiled: September 21, 2016Publication date: January 12, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya ANZAI, Yoshifumi TANADA, Keisuke MIYAGAWA, Satoshi SEO, Shunpei YAMAZAKI
-
Patent number: 9520410Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.Type: GrantFiled: July 30, 2014Date of Patent: December 13, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Murakami, Motomu Kurata, Hiroyuki Hata, Mitsuhiro Ichijo, Takashi Ohtsuki, Aya Anzai, Masayuki Sakakura
-
Publication number: 20160284778Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: ApplicationFiled: March 28, 2016Publication date: September 29, 2016Inventors: Mitsuaki OSAME, Aya ANZAI, Yu YAMAZAKI, Ryota FUKUMOTO
-
Patent number: 9454933Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: GrantFiled: March 19, 2015Date of Patent: September 27, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
-
Publication number: 20160204178Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: ApplicationFiled: March 18, 2016Publication date: July 14, 2016Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Yoshifumi TANADA, Mitsuaki OSAME, Aya ANZAI, Ryota FUKUMOTO
-
Patent number: 9300771Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: GrantFiled: February 19, 2014Date of Patent: March 29, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yu Yamazaki, Ryota Fukumoto
-
Patent number: 9293477Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: GrantFiled: February 10, 2015Date of Patent: March 22, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Yoshifumi Tanada, Mitsuaki Osame, Aya Anzai, Ryota Fukumoto
-
Patent number: 9287343Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.Type: GrantFiled: January 29, 2015Date of Patent: March 15, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Keitaro Imai, Aya Anzai, Yasuko Watanabe
-
Patent number: 9208723Abstract: A semiconductor device of the invention includes a data line, a power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, a third transistor, and a light-emitting element. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a first terminal of the third transistor is connected to the light-emitting element; and the memory circuit holds a first potential inputted from the power source line or a second potential inputted from the second scan line, and applies the potential to a gate of the third transistor to control emission/non-emission of the light-emitting element.Type: GrantFiled: April 13, 2011Date of Patent: December 8, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai
-
Patent number: 9147720Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.Type: GrantFiled: June 16, 2014Date of Patent: September 29, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yu Yamazaki
-
Publication number: 20150270322Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: June 4, 2015Publication date: September 24, 2015Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
-
Patent number: 9111842Abstract: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the first transistor and the second transistor are electrically connected to each other. A potential is supplied to the first pixel electrode and the second pixel electrode through a wiring electrically connected to the first transistor and the second transistor.Type: GrantFiled: January 30, 2015Date of Patent: August 18, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Aya Anzai, Mitsuaki Osame, Shunpei Yamazaki
-
Publication number: 20150194095Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: ApplicationFiled: March 19, 2015Publication date: July 9, 2015Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
-
Patent number: 9054199Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: February 5, 2014Date of Patent: June 9, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
-
Publication number: 20150155308Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.Type: ApplicationFiled: February 10, 2015Publication date: June 4, 2015Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Yoshifumi TANADA, Mitsuaki OSAME, Aya ANZAI, Ryota FUKUMOTO
-
Publication number: 20150144973Abstract: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the first transistor and the second transistor are electrically connected to each other. A potential is supplied to the first pixel electrode and the second pixel electrode through a wiring electrically connected to the first transistor and the second transistor.Type: ApplicationFiled: January 30, 2015Publication date: May 28, 2015Inventors: Aya Anzai, Mitsuaki Osame, Shunpei Yamazaki
-
Publication number: 20150137154Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.Type: ApplicationFiled: January 29, 2015Publication date: May 21, 2015Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Keitaro IMAI, Aya ANZAI, Yasuko WATANABE