Patents by Inventor Ayako Sato
Ayako Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7668040Abstract: The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.Type: GrantFiled: February 16, 2007Date of Patent: February 23, 2010Assignee: Fujitsu Microelectronics LimitedInventors: Hitoshi Ikeda, Takahiko Sato, Tatsuya Kanda, Toshiya Uchida, Hiroyuki Kobayashi, Satoru Shirakawa, Tetsuo Miyamoto, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20090027988Abstract: An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals.Type: ApplicationFiled: December 19, 2007Publication date: January 29, 2009Applicant: Toyoda Gosei Co., Ltd.Inventors: Takahiko Sato, Toshiya Uchida, Tatsuya Kanda, Tetsuo Miyamoto, Satoru Shirakawa, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20080189467Abstract: The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.Type: ApplicationFiled: December 18, 2007Publication date: August 7, 2008Inventors: Hitoshi Ikeda, Takahiko Sato, Tatsuya Kanda, Toshiya Uchida, Hiroyuki Kobayashi, Satoru Shirakawa, Tetsuo Miyamoto, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20080181027Abstract: An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals.Type: ApplicationFiled: December 19, 2007Publication date: July 31, 2008Inventors: Takahiro Sato, Toshiya Uchida, Tatsuya Kanda, Tetsuo Miyamoto, Satoru Shirakawa, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20080151670Abstract: Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof.Type: ApplicationFiled: February 23, 2007Publication date: June 26, 2008Inventors: Tomohiro Kawakubo, Syusaku Yamaguchi, Hitoshi Ikeda, Toshiya Uchida, Hiroyuki Kobayashi, Tatsuya Kanda, Yoshinobu Yamamoto, Satoru Shirakawa, Tetsuo Miyamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20080151678Abstract: The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.Type: ApplicationFiled: February 16, 2007Publication date: June 26, 2008Inventors: Hitoshi Ikeda, Takahiko Sato, Tatsuya Kanda, Toshiya Uchida, Hiroyuki Kobayashi, Satoru Shirakawa, Tetsuo Miyamoto, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Publication number: 20080151677Abstract: An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals.Type: ApplicationFiled: January 26, 2007Publication date: June 26, 2008Inventors: Takahiko Sato, Toshiya Uchida, Tatsuya Kanda, Tetsuo Miyamoto, Satoru Shirakawa, Yoshinobu Yamamoto, Tatsushi Otsuka, Hidenaga Takahashi, Masanori Kurita, Shinnosuke Kamata, Ayako Sato
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Patent number: 7297996Abstract: A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.Type: GrantFiled: December 12, 2005Date of Patent: November 20, 2007Assignee: Fujitsu LimitedInventors: Ayako Sato, Masato Matsumiya, Satoshi Eto
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Patent number: 7243274Abstract: An external terminal receives an external signal so as to access the first and second memory chips. The test starting terminal receives a test starting signal activated when the first or second memory chip is tested and inactivated when the first and second memory chips are normally operated. The access signal generator converts the external signal to a memory access signal of the first memory chip. The first selector selects the external signal, which is a test signal, during activation of the test starting signal, selects the memory access signal during the inactivation of the test starting signal. That is, during the test modes, the first memory chip can be directly accessed from the exterior. For this reason, the test program for testing the first memory chip alone can be diverted as the test program following an assembly of the semiconductor device.Type: GrantFiled: August 18, 2005Date of Patent: July 10, 2007Assignee: Fujitsu LimitedInventors: Masafumi Yamazaki, Takaaki Suzuki, Toshikazu Nakamura, Satoshi Eto, Toshiya Miyo, Ayako Sato, Takayuki Yoneda, Noriko Kawamura
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Publication number: 20060294322Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.Type: ApplicationFiled: August 30, 2006Publication date: December 28, 2006Inventors: Yasurou Matsuzaki, Takaaki Suzuki, Masafumi Yamazaki, Kenichi Kawasaki, Shinnosuke Kamata, Ayako Sato, Masato Matsumiya
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Patent number: 7152150Abstract: A semiconductor memory device includes a memory core circuit, a command circuit which receives commands from an exterior of the device at intervals at least as long as a minimum command cycle, a timing generator configured to request a read access to the memory core circuit immediately after inputting of a read command if a command supplied from the exterior to the command circuit is the read command, to perform a read operation on the memory core circuit immediately after the request of the read access if there is no currently performed operation in the memory core circuit, to request a write access to the memory core circuit after data is fixed prior to an end of a command cycle during which a write command corresponding to the write access is entered from the exterior to the command circuit, to perform a write operation on the memory core circuit immediately after the request of the write access if there is no currently performed operation in the memory core circuit, and to control an order of a pluralityType: GrantFiled: July 29, 2002Date of Patent: December 19, 2006Assignee: Fujitsu LimitedInventors: Ayako Sato, Masato Matsumiya
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Patent number: 7120761Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.Type: GrantFiled: October 31, 2002Date of Patent: October 10, 2006Assignee: Fujitsu LimitedInventors: Yasurou Matsuzaki, Takaaki Suzuki, Masafumi Yamazaki, Kenichi Kawasaki, Shinnosuke Kamata, Ayako Sato, Masato Matsumiya
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Publication number: 20060086951Abstract: A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.Type: ApplicationFiled: December 12, 2005Publication date: April 27, 2006Inventors: Ayako Sato, Masato Matsumiya, Satoshi Eto
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Patent number: 7005693Abstract: A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.Type: GrantFiled: September 3, 2003Date of Patent: February 28, 2006Assignee: Fujitsu LimitedInventors: Ayako Sato, Masato Matsumiya, Satoshi Eto
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Publication number: 20060015788Abstract: A logic chip and a memory chip to be accessed by the logic chip are mounted in a single package. A pattern generator of the logic chip operates during a first test mode to generate internal test pattern(s) for the memory chip. A pattern selector selects, during the first test mode, the internal test pattern(s) outputted from the pattern generator, selects, during a second test mode, an external test pattern supplied via a test terminal, and outputs the selected test pattern to the memory chip. The memory chip mounted in the package is tested by use of, in accordance with a mode selecting signal, either the internal test pattern(s) (the first test mode) generated within the logic chip or the external test pattern (the second test mode) supplied from the exterior.Type: ApplicationFiled: August 18, 2005Publication date: January 19, 2006Inventors: Masafumi Yamazaki, Takaaki Suzuki, Toshikazu Nakamura, Satoshi Eto, Toshiya Miyo, Ayako Sato, Takayuki Yoneda, Noriko Kawamura
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Patent number: 6961881Abstract: A logic chip and a memory chip to be accessed by the logic chip are mounted in a single package. A pattern generator of the logic chip operates during a first test mode to generate internal test pattern for the memory chip. A pattern selector selects, during the first test mode, the internal test pattern outputted from the pattern generator, selects, during a second test mode, an external test pattern supplied via a test terminal, and outputs the selected test pattern to the memory chip. The memory chip mounted in the package is tested by use of, in accordance with a mode selecting signal, either the internal test pattern in the first test mode, generated within the logic chip, or the external test pattern in the second test mode, supplied from the exterior.Type: GrantFiled: April 16, 2002Date of Patent: November 1, 2005Assignee: Fujitsu LimitedInventors: Masafumi Yamazaki, Takaaki Suzuki, Toshikazu Nakamura, Satoshi Eto, Toshiya Miyo, Ayako Sato, Takayuki Yoneda, Noriko Kawamura
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Patent number: 6819610Abstract: A semiconductor memory device includes a first bit line connected to a memory cell via a transistor, a transfer gate, a second bit line connected to the first bit line via the transfer gate, a sense amplifier connected to the second bit line, a first precharge circuit for precharging the first bit line, a second precharge circuit for precharging the second bit line, a control circuit which precharges the first bit line by the first precharge circuit after closing the transfer gate, followed by subsequent precharging of the second bit line by the second precharge circuit.Type: GrantFiled: October 10, 2002Date of Patent: November 16, 2004Assignee: Fujitsu LimitedInventors: Toshiya Miyo, Toshikazu Nakamura, Satoshi Eto, Ayako Sato, Masato Matsumiya
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Publication number: 20040061144Abstract: A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.Type: ApplicationFiled: September 3, 2003Publication date: April 1, 2004Applicant: FUJITSU LIMITEDInventors: Ayako Sato, Masato Matsumiya, Satoshi Eto
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Publication number: 20030146950Abstract: A semiconductor memory device includes a first bit line connected to a memory cell via a transistor, a transfer gate, a second bit line connected to the first bit line via the transfer gate, a sense amplifier connected to the second bit line, a first precharge circuit for precharging the first bit line, a second precharge circuit for precharging the second bit line, a control circuit which precharges the first bit line by the first precharge circuit after closing the transfer gate, followed by subsequent precharging of the second bit line by the second precharge circuit.Type: ApplicationFiled: October 10, 2002Publication date: August 7, 2003Applicant: Fujitsu LimitedInventors: Toshiya Miyo, Toshikazu Nakamura, Satoshi Eto, Ayako Sato, Masato Matsumiya
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Publication number: 20030145184Abstract: A semiconductor memory device includes a memory core circuit, a command circuit which receives commands from an exterior of the device at intervals at least as long as a minimum command cycle, a timing generator configured to request a read access to the memory core circuit immediately after inputting of a read command if a command supplied from the exterior to the command circuit is the read command, to perform a read operation on the memory core circuit immediately after the request of the read access if there is no currently performed operation in the memory core circuit, to request a write access to the memory core circuit after data is fixed prior to an end of a command cycle during which a write command corresponding to the write access is entered from the exterior to the command circuit, to perform a write operation on the memory core circuit immediately after the request of the write access if there is no currently performed operation in the memory core circuit, and to control an order of a pluralityType: ApplicationFiled: July 29, 2002Publication date: July 31, 2003Applicant: FUJITSU LIMITEDInventors: Ayako Sato, Masato Matsumiya