Abstract: A microelectronic sensor for non-invasive and label-free chemical detection and biomolecular diagnostics of analytes in a raw sample (without pre-treatment and without purification) is described in the present invention. The sensor comprises a microelectronic chip and a sample collection system attached to said microelectronic chip or incorporating said microelectronic chip. The sample collection system may be a sampling swab attached to the microelectronic chip or a breathalyser tube incorporating the microelectronic chip. The microelectronic chip contains a nanoarray of metamolecules configured to detect and transmit signals through the sample in a THz frequency range, and an integrated circuit for storing and processing signals in a THz frequency domain, and for modulating and demodulating radio-frequency (RF) signals.

Abstract: The present invention relates to an open-gate pseudo-conducting high-electron mobility transistor (PC-HEMT) combined with a bolometric or pyroelectric detector installed in an open gate area of the transistor, for amplifying signals in the frequency range between 30 GHz to 430 THz. The transistor of the present invention further comprises either an asymmetric dual grating gate created on top of a detector layer, or a separately-biased grating gate created on top and in the middle of the detector layer. The grating gate is capable of completely depleting the 2DEG or 2DHG conducting channel locally, while leaving the remaining area under the grating gate to be tuned for resonant plasmon absorption of sub-THz or THz radiation. A microelectronic sensor comprising the PC-HEMT of the present invention is suitable for chemical sensing and biomolecular diagnostics. Non-limiting examples of biological compounds to be tested are human viral pathogens, such as SARS-CoV-2.

Abstract: In some embodiments, the present application provides a swallowable capsule comprising pseudo conductive high-electron-mobility transistors (PC-HEMTs), and its use in an intestinal and gut diagnostics and gut motility monitoring.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non-ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in cardiovascular and pulmonary monitoring, detection and measurements of electrocardiography signals, detection of the primary heart activity signals and measurements of the central venous pressure and heart rate variability, measurements of the right and left atrium pressures, recording a phonocardiogram, detection of the S2-split phenomena, measurements of breath dynamics and lung activity diagnostics, monitoring the brain activity and measuring and monitoring electrical signals associated with an electroencephalogram, and eye pressure diagnostics.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in recording physiological and non-physiological sounds as hypersensitive microphones. Recording the physiological sounds is associated with the S1/S2 heart split phenomena and phonocardiography.

Abstract: In some embodiments, an open-gate pseudo-conductive high-electron mobility transistor (PC-HEMT) includes a multilayer hetero-junction structure made of III-V single-crystalline or polycrystalline semiconductor materials. This structure includes at least one buffer layer and a barrier layer, and is deposited on a substrate layer. The PC-HEMT further includes a two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting channel formed at the interface between the buffer layer and the barrier layer, source and drain contacts, either ohmic or non-ohmic, connected to the 2DEG or 2DHG conducting channel, electrical metallizations for connecting the PC-HEMT to an electric circuit, and an open gate area between the source and drain contacts.

Abstract: The present invention provides a microelectronic device for sorbent, immunosorbent or cell sorbent assay, or flow cytometry, and for measuring biological cell dynamics. The device is based on an open-gate pseudo-conductive high-electron mobility transistor, which is based on a multilayer hetero-junction structure being made of III-V single- or polycrystalline semi-conductor materials and deposited on a substrate layer or placed on a free-standing membrane. Said structure comprising at least one buffer layer and at least one barrier layer, said layers being stacked alternately, wherein the thickness of a top (barrier or buffer) layer in an open gate area of said transistor is 5-9 nanometre (nm), which corresponds to the pseudo-conducting current range between normally-on and normally-off operation mode of the transistor, and the surface of said top layer has a roughness of about 0.2 nm or less.

Abstract: The present invention describes a method for chemical sensing and biomolecular diagnostics with a microelectronic sensor based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a Vivaldi antenna installed in the open gate area of the transistor and operated in the sub-THz and THz frequency range.

Abstract: The present invention describes a microelectronic sensor based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a metamaterial electrode installed in the open gate area of the transistor and operated in the sub-THz and THz frequency range. The sensor can be used in different applications, for example, chemical sensing and biomolecular diagnostics, monitoring glucose levels in blood and biometric authentication of a user.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as GaN/AlGaN. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.

Abstract: A microelectronic sensor for non-invasive monitoring of glucose levels in blood is based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a Vivaldi antenna installed in the open gate area of the transistor. The sensor is capable of sensing sub-THz radiation produced by a body of a user, and comprises a heterojunction structure made of the layers of GaN/AlGaN single- or poly-crystalline semiconductor materials stacked alternately and a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) formed at the interface between the GaN/AlGaN layers. The highest sensitivity of the sensor is achieved when the thickness of the top recessed layer (GaN or AlGaN) in the open gate area between the source and drain contacts is 5-9 nm and the surface roughness of this top layer is about 0.2 nm or less.

Abstract: The present application describes embodiments of a zero-power radio-frequency identification (RFID) sensor chip based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional holegas (2DHG) conducting structure, and its use as an ultrasensitive microphone for material and structure sensing. The SAW RFID sensor contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystalline semiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in hemodynamic wearable devices. The SAW RFID sensor chip contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein the layers are grown from III-V single-crystalline or polycrystalline semi-conductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provides electron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in cardiovascular and pulmonary monitoring, detection and measurements of electrocardiography signals, detection of the primary heart activity signals and measurements of the central venous pressure and heart rate variability, measurements of the right and left atrium pressures, recording a phonocardiogram, detection of the S2-split phenomena, measurements of breath dynamics and lung activity diagnostics, monitoring the brain activity and measuring and monitoring electrical signals associated with an electroencephalogram, and eye pressure diagnostics.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG)conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to theformed channel.

Abstract: The present application describes embodiments of a zero-power radio-frequency identification (RFID) sensor chip based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional holegas (2DHG) conducting structure, and its use as an ultrasensitive microphone for material and structure sensing. The SAW RFID sensor contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystalline semiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer.

Abstract: An electrical circuit element, defined as “pixel”, can include at least one silicon nanowire open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. Some embodiments provide a microelectronic sensor and wearable-patch sensor based on the array of these pixels. Also, some embodiments provide methods for performing DC readout, AC readout and a triple readout combining both DC and AC readouts and temperature sensing.

Abstract: In some embodiments, the present application provides a swallowable capsule comprising pseudo conductive high-electron-mobility transistors (PC-HEMTs), and its use in an intestinal and gut diagnostics and gut motility monitoring.