Patents by Inventor Ayan KAR
Ayan KAR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250261452Abstract: Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a second fin portion that meet at a junction. A plurality of gate structures is over the first fin portion and a second fin portion. A plurality of P-type epitaxial structures and N-type epitaxial structures is between corresponding adjacent ones of the plurality of gate structures. Pairs of the P-type epitaxial structures alternate with pairs of the N-type epitaxial structures.Type: ApplicationFiled: May 1, 2025Publication date: August 14, 2025Inventors: Rui MA, Kalyan KOLLURU, Nicholas THOMSON, Ayan KAR, Benjamin ORR, Nathan JACK, Biswajeet GUHA, Brian GREENE, Chung-Hsun LIN
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Publication number: 20250254993Abstract: Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.Type: ApplicationFiled: April 28, 2025Publication date: August 7, 2025Inventors: Biswajeet GUHA, Brian GREENE, Avyaya JAYANTHINARASIMHAM, Ayan KAR, Benjamin ORR, Chung-Hsun LIN, Curtis TSAI, Kalyan KOLLURU, Kevin FISCHER, Lin HU, Nathan JACK, Nicholas THOMSON, Rishabh MEHANDRU, Rui MA, Sabih OMAR
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Publication number: 20250228012Abstract: Disclosed herein are integrated circuit (IC) structures including backside vias, as well as related methods and devices. In some embodiments, an IC structure may include: a device layer, wherein the device layer includes a plurality of active devices; a first metallization layer over the device layer, wherein the first metallization layer includes a first conductive pathway in conductive contact with at least one of the active devices in the device layer; a second metallization layer under the device layer, wherein the second metallization layer includes a second conductive pathway; and a conductive via in the device layer, wherein the conductive via is in conductive contact with at least one of the active devices in the device layer and also in conductive contact with the second conductive pathway.Type: ApplicationFiled: March 27, 2025Publication date: July 10, 2025Applicant: Intel CorporationInventors: Nicholas A. Thomson, Kalyan C. Kolluru, Adam Clay Faust, Frank Patrick O'Mahony, Ayan Kar, Rui Ma
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Patent number: 12328946Abstract: Embodiments disclosed herein include semiconductor devices with electrostatic discharge (ESD) protection of the transistor devices. In an embodiment, a semiconductor device comprises a semiconductor substrate, where a transistor device is provided on the semiconductor substrate. In an embodiment, the semiconductor device further comprises a stack of routing layers over the semiconductor substrate, and a diode in the stack of routing layers. In an embodiment, the diode is configured to provide electrostatic discharge (ESD) protection to the transistor device.Type: GrantFiled: December 23, 2020Date of Patent: June 10, 2025Assignee: Intel CorporationInventors: Urusa Alaan, Abhishek A. Sharma, Charles C. Kuo, Benjamin Orr, Nicholas Thomson, Ayan Kar, Arnab Sen Gupta, Kaan Oguz, Brian S. Doyle, Prashant Majhi, Van H. Le, Elijah V. Karpov
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Patent number: 12328947Abstract: Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a second fin portion that meet at a junction. A plurality of gate structures is over the first fin portion and a second fin portion. A plurality of P-type epitaxial structures and N-type epitaxial structures is between corresponding adjacent ones of the plurality of gate structures. Pairs of the P-type epitaxial structures alternate with pairs of the N-type epitaxial structures.Type: GrantFiled: June 24, 2021Date of Patent: June 10, 2025Assignee: Intel CorporationInventors: Rui Ma, Kalyan Kolluru, Nicholas Thomson, Ayan Kar, Benjamin Orr, Nathan Jack, Biswajeet Guha, Brian Greene, Chung-Hsun Lin
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Patent number: 12317590Abstract: Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.Type: GrantFiled: September 25, 2020Date of Patent: May 27, 2025Assignee: Intel CorporationInventors: Biswajeet Guha, Brian Greene, Avyaya Jayanthinarasimham, Ayan Kar, Benjamin Orr, Chung-Hsun Lin, Curtis Tsai, Kalyan Kolluru, Kevin Fischer, Lin Hu, Nathan Jack, Nicholas Thomson, Rishabh Mehandru, Rui Ma, Sabih Omar
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Patent number: 12294003Abstract: Disclosed herein are integrated circuit (IC) structures including backside vias, as well as related methods and devices. In some embodiments, an IC structure may include: a device layer, wherein the device layer includes a plurality of active devices; a first metallization layer over the device layer, wherein the first metallization layer includes a first conductive pathway in conductive contact with at least one of the active devices in the device layer; a second metallization layer under the device layer, wherein the second metallization layer includes a second conductive pathway; and a conductive via in the device layer, wherein the conductive via is in conductive contact with at least one of the active devices in the device layer and also in conductive contact with the second conductive pathway.Type: GrantFiled: August 29, 2023Date of Patent: May 6, 2025Assignee: Intel CorporationInventors: Nicholas A. Thomson, Kalyan C. Kolluru, Adam Clay Faust, Frank Patrick O'Mahony, Ayan Kar, Rui Ma
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Patent number: 12288789Abstract: Gate-all-around structures having devices with source/drain-to-substrate electrical contact are described. An integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first fin. A first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures is directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above a second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at first and second ends of the second vertical arrangement of horizontal nanowires. Both of the second pair of epitaxial source or drain structures is electrically isolated from the second fin.Type: GrantFiled: January 9, 2024Date of Patent: April 29, 2025Assignee: Intel CorporationInventors: Biswajeet Guha, William Hsu, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani, Kalyan Kolluru, Nathan Jack, Nicholas Thomson, Ayan Kar, Benjamin Orr
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Publication number: 20240413147Abstract: A two-terminal IC device may be used for ESD protection. The IC device may include a deep N-well may be between a P-type substrate and a group of wells that includes a first P-well, a second P-well, and a N-well. There may be another well between the second P-well and the N-well. A P-type semiconductor structure may be formed in the P-well. Two N-type semiconductor structures may be formed in the second P-well and the N-well, respectively. A contact of the P-type semiconductor structure may be electrically coupled to a contact of the N-type semiconductor structure in the second P-well. The two contacts may constitute the first terminal of the IC device. The contact of the N-type semiconductor structure in the N-well may constitute the second terminal of the IC device. The first P-well may have a greater dimension but lower dopant concentration than the second P-well or the N-well.Type: ApplicationFiled: June 12, 2023Publication date: December 12, 2024Applicant: Intel CorporationInventors: Ayan Kar, Kalyan C. Kolluru
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Publication number: 20240393186Abstract: Embodiments herein relate to a temperature-sensing circuit for a semiconductor device. The circuit has a remote temperature-sensing element (RTSE) including a metal thermistor formed in a metal layer on the front side or backside of a substrate. The metal thermistor may be serpentine or spiral shaped. The RTSE communicates with a separate sense circuit at another location such as on the substrate. The RTSE can further include a thin film resistor (TFR) in an adjacent dielectric layer of the stack or within the sense circuit. The RTSE is driven alternately at opposing ends to cancel out the effects of power supply variations. An output voltage which represents a sensed temperature is obtained from a point between the metal thermistor and the TFR for processing by an analog-to-digital converter.Type: ApplicationFiled: May 26, 2023Publication date: November 28, 2024Inventors: David E. Duarte, Ayan Kar, Sameer Jayanta Joglekar, You Li, James S. Ayers
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Patent number: 11996403Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a semiconductor substrate and a source. The source has a first conductivity type and a first insulator separates the source from the semiconductor substrate. The semiconductor device further comprises a drain. The drain has a second conductivity type that is opposite from the first conductivity type, and a second insulator separates the drain from the semiconductor substrate. In an embodiment, the semiconductor further comprises a semiconductor body between the source and the drain, where the semiconductor body is spaced away from the semiconductor substrate.Type: GrantFiled: December 13, 2019Date of Patent: May 28, 2024Assignee: Intel CorporationInventors: Nidhi Nidhi, Rahul Ramaswamy, Walid M. Hafez, Hsu-Yu Chang, Ting Chang, Babak Fallahazad, Tanuj Trivedi, Jeong Dong Kim, Ayan Kar, Benjamin Orr
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Publication number: 20240170581Abstract: An integrated circuit structure includes a sub-fin having at least a first portion that is doped with a first type of dopant, and a second portion that is doped with a second type of dopant. A PN junction is between the first and second portions of the sub-fin. The first type of dopant is one of a p-type or an n-type dopant, and the second type of dopant is the other of the p-type or the n-type dopant. A first contact and a second contact comprise conductive material. In an example, the first contact and the second contact are respectively in contact with the first portion and the second portion of the sub-fin. A diode is formed based on the PN junction between the first and second portions, where the first contact is an anode contact of the diode, and the second contact is a cathode contact of the diode.Type: ApplicationFiled: November 22, 2022Publication date: May 23, 2024Applicant: Intel CorporationInventors: Cheng-Ying Huang, Ayan Kar, Patrick Morrow, Charles C. Kuo, Nicholas A. Thomson, Benjamin Orr, Kalyan C. Kolluru, Marko Radosavljevic, Jack T. Kavalieros
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Publication number: 20240145471Abstract: Gate-all-around structures having devices with source/drain-to-substrate electrical contact are described. An integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first fin. A first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures is directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above a second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at first and second ends of the second vertical arrangement of horizontal nanowires. Both of the second pair of epitaxial source or drain structures is electrically isolated from the second fin.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Inventors: Biswajeet GUHA, William HSU, Chung-Hsun LIN, Kinyip PHOA, Oleg GOLONZKA, Tahir GHANI, Kalyan KOLLURU, Nathan JACK, Nicholas THOMSON, Ayan KAR, Benjamin ORR
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Patent number: 11961836Abstract: An integrated circuit structure comprises one or more fins extending above a surface of a substrate over an N-type well. A gate is over and in contact with the one or more fins. A second shallow N-type doping is below the gate and above the N-type well.Type: GrantFiled: September 28, 2018Date of Patent: April 16, 2024Assignee: Intel CorporationInventors: Hyung-Jin Lee, Mark Armstrong, Saurabh Morarka, Carlos Nieva-Lozano, Ayan Kar
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Publication number: 20240088134Abstract: An integrated circuit structure includes laterally adjacent first and second devices. The first device has (i) a first diffusion region, (ii) a first body including semiconductor material extending laterally from the first diffusion region, and (iii) a first gate structure on the first body. The first diffusion region has a first lower section that extends below a lower surface of the first gate structure, the first lower section having a first height. The second device has (i) a second diffusion region, (ii) a second body including semiconductor material extending laterally from the second diffusion region, and (iii) a second gate structure on the second body. The second diffusion region has a second lower section that extends below a lower surface of the second gate structure, the second lower section having a second height. In an example, the first height is at least 2 nanometers greater than the second height.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Applicant: Intel CorporationInventors: Nicholas A. Thomson, Ayan Kar, Kalyan C. Kolluru, Mauro J. Kobrinsky
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Publication number: 20240088131Abstract: An integrated circuit structure includes a sub-fin having at least a portion that is doped with a first type of dopant, and a diffusion region doped with a second type of dopant. The diffusion region is in contact with the sub-fin and extends upward from the sub-fin. The first type of dopant is one of a p-type or an n-type dopant, and the second type of dopant is the other of the p-type or the n-type dopant. In an example, a first conductive contact is above and on the diffusion region, and a second conductive contact is in contact with the portion of the sub-fin. In an example, the diffusion region is at least a part of one of an anode or a cathode of a diode, and the portion of the sub-fin is at least a part of the other of the anode or the cathode of the diode.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Applicant: Intel CorporationInventors: Nicholas A. Thomson, Kalyan C. Kolluru, Ayan Kar, Mauro J. Kobrinsky
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Publication number: 20240088136Abstract: An integrated circuit structure includes a sub-fin, a source region in contact with a first portion of the sub-fin, and a drain region in contact with a second portion of the sub-fin. A body including semiconductor material is above the sub-fin, where the body extends laterally between the source region and the drain region. A gate structure is on the body and includes (i) a gate electrode, and (ii) a gate dielectric between the gate electrode and the body. In an example, a first distance between the drain region and the gate electrode is at least two times a second distance between the source region and the gate electrode, where the first and second distances are measured in a same horizontal plane that runs in a direction parallel to the body. In an example, the body is a nanoribbon, a nanosheet, a nanowire, or a fin.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Applicant: Intel CorporationInventors: Ayan Kar, Nicholas A. Thomson, Kalyan C. Kolluru, Benjamin Orr
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Publication number: 20240088132Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Applicant: Intel CorporationInventors: Nicholas A. Thomson, Kalyan C. Kolluru, Ayan Kar, Chu-Hsin Liang, Benjamin Orr, Biswajeet Guha, Brian Greene, Chung-Hsun Lin, Sabih U. Omar, Sameer Jayanta Joglekar
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Publication number: 20240088133Abstract: An integrated circuit structure includes a sub-fin having a first type of dopant, a first diffusion region having the first type of dopant and in contact with the sub-fin, and a second diffusion region and a third diffusion region having a second type of dopant and in contact with the sub-fin. The first type of dopant is one of p-type or n-type dopant, and where the second type of dopant is the other of the p-type or n-type dopant. A first body of semiconductor material extends from the second diffusion region to the third diffusion region, and a second body of semiconductor material extends from the first diffusion region towards the second diffusion region. The first diffusion region is a tap diffusion region contacting the sub-fin. In an example, the first diffusion region facilitates formation of a diode for electrostatic discharge (ESD) protection of the integrated circuit structure.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Inventors: Nicholas A. Thomson, Ayan Kar, Kalyan C. Kolluru, Mauro J. Kobrinksy, Benjamin Orr
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Patent number: 11908856Abstract: Gate-all-around structures having devices with source/drain-to-substrate electrical contact are described. An integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first fin. A first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures is directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above a second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at first and second ends of the second vertical arrangement of horizontal nanowires. Both of the second pair of epitaxial source or drain structures is electrically isolated from the second fin.Type: GrantFiled: December 18, 2019Date of Patent: February 20, 2024Assignee: Intel CorporationInventors: Biswajeet Guha, William Hsu, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani, Kalyan Kolluru, Nathan Jack, Nicholas Thomson, Ayan Kar, Benjamin Orr