Abstract: Selective deposition of a silicon-germanium surface layer on semiconductor surfaces can be employed to provide two types of channel regions for field effect transistors. Anneal of an adjustment oxide material on a stack of a silicon-based gate dielectric and a high dielectric constant (high-k) gate dielectric can be employed to form an interfacial adjustment oxide layer contacting a subset of channel regions. Oxygen deficiency can be induced in portions of the high-k dielectric layer overlying the interfacial adjustment oxide layer by deposition of a first work function metallic material layer and a capping layer and a subsequent anneal. Oxygen deficiency can be selectively removed by physically exposing portions of the high-k dielectric layer. A second work function metallic material layer and a gate conductor layer can be deposited and planarized to form gate electrodes that provide multiple effective work functions.

Abstract: Method, system, and programs for providing identifiers to objects. Input data representing a plurality of objects is received and categorized into a plurality of entity categories. A first graph of entities is generated using the plurality of entity categories. The first graph of entities are matched with a second graph of entities. A comparison of object pairs is then made, in which each object pair includes a first object from the first graph of entities and a corresponding second object from the second graph of entities. Identifiers are assigned to each object based on comparing the object pairs.

Abstract: An example of a method includes determining, electronically, a source location and a destination location in response to an input received through one of a first short message service (SMS) and a general packet radio service (GPRS). The method also includes determining, electronically, a first milestone between the source location and the destination location. Further, the method includes sending directions to reach the first milestone from the source location through a second SMS and an identifier associated with the first milestone. Furthermore, the method includes detecting when to send directions to reach one of a second milestone and the destination location from the first milestone. In addition, the method includes sending directions to reach one of the second milestone and the destination location through a third SMS based on detecting.

Abstract: A method for forming a replacement metal gate structure sharing a single work function metal for both the N-FET and the P-FET gates. The method oppositely dopes a high-k material of the N-FET and P-FET gate, respectively, using a single lithography step. The doping allows use of a single work function metal which in turn provides more space in the metal gate opening so that a bulk fill material may occupy more volume of the opening resulting in a lower resistance gate.

Abstract: Intrinsic channels one or more intrinsic semiconductor materials are provided in a semiconductor substrate. A high dielectric constant (high-k) gate dielectric layer is formed on the intrinsic channels. A patterned diffusion barrier metallic nitride layer is formed. A threshold voltage adjustment oxide layer is formed on the physically exposed portions of the high-k gate dielectric layer and the diffusion barrier metallic nitride layer. An anneal is performed to drive in the material of the threshold voltage adjustment oxide layer to the interface between the intrinsic channel(s) and the high-k gate dielectric layer, resulting in formation of threshold voltage adjustment oxide portions. At least one work function material layer is formed, and is patterned with the high-k gate dielectric layer and the threshold voltage adjustment oxide portions to form multiple types of gate stacks.

Abstract: A high dielectric constant (high-k) gate dielectric layer is formed on semiconductor fins including one or more semiconductor materials. A patterned diffusion barrier metallic nitride layer is formed to overlie at least one channel, while not overlying at least another channel. A threshold voltage adjustment oxide layer is formed on the physically exposed portions of the high-k gate dielectric layer and the diffusion barrier metallic nitride layer. An anneal is performed to drive in the material of the threshold voltage adjustment oxide layer to the interface between the intrinsic channel(s) and the high-k gate dielectric layer, resulting in formation of threshold voltage adjustment oxide portions. At least one workfunction material layer is formed, and is patterned with the high-k gate dielectric layer and the threshold voltage adjustment oxide portions to form multiple types of gate stacks straddling the semiconductor fins.

Abstract: A data processing system employs a pre-processing step to create a simplified view of a received entity graph. During the pre-processing step, only the objects and the attributes of those objects within the graph that are required for data processing are selected. Pruned source and target objects are generated by omitting those attributes that are not required for processing. The pruned objects are included in the simplified view that enhances system performance.

Abstract: Method, system, and programs for providing identifiers to objects. Input data representing a plurality of objects is received and categorized into a plurality of entity categories. A first graph of entities is generated using the plurality of entity categories. The first graph of entities are matched with a second graph of entities. A comparison of object pairs is then made, in which each object pair includes a first object from the first graph of entities and a corresponding second object from the second graph of entities. Identifiers are assigned to each object based on comparing the object pairs.

Abstract: A system includes control circuitry configured to provide one or more control pulses in response to a command signal, the one or more control pulses being communicated from the control circuitry to associated circuitry via a connection. A detector is configured to detect a disturbing signal that mitigates reception of the one or more control pulses via the connection. The command signal is controlled to cause the control circuitry to provide one or more additional control pulses when the disturbing signal is detected by the detector to improve a likelihood of the reception of the one or more control pulses via the connection.

Abstract: An example of a method includes determining, electronically, a source location and a destination location in response to an input received through one of a first short message service (SMS) and a general packet radio service (GPRS). The method also includes determining, electronically, a first milestone between the source location and the destination location. Further, the method includes sending directions to reach the first milestone from the source location through a second SMS and an identifier associated with the first milestone. Furthermore, the method includes detecting when to send directions to reach one of a second milestone and the destination location from the first milestone. In addition, the method includes sending directions to reach one of the second milestone and the destination location through a third SMS based on detecting.

Abstract: A system includes control circuitry configured to provide one or more control pulses in response to a command signal, the one or more control pulses being communicated from the control circuitry to associated circuitry via a connection. A detector is configured to detect a disturbing signal that mitigates reception of the one or more control pulses via the connection. The command signal is controlled to cause the control circuitry to provide one or more additional control pulses when the disturbing signal is detected by the detector to improve a likelihood of the reception of the one or more control pulses via the connection.

Abstract: Methods for forming a high-k dielectric layer that may be utilized to form a metal gate structure in TANOS charge trap flash memories. In one embodiment, the method may include providing a substrate into a chamber, supplying a gas mixture containing an oxygen containing gas and aluminum containing compound into the chamber, wherein the aluminum containing compound has a formula selected from a group consisting of RxAly(OR?)x and Al(NRR?)3, heating the substrate, and depositing an aluminum oxide layer having a dielectric constant greater than 8 on the heated substrate by a chemical vapor deposition process.