Abstract: In an example, a circuit includes a first power switch device coupled between a voltage input and an output terminal, the first power switch device having a control input. A voltage divider circuit includes a first resistor and a second resistor. The first resistor is coupled between the voltage input and a sense node between the first resistor and the second resistor. The second resistor has a first terminal coupled to the sense node and a second terminal. A second switch device is coupled between the second terminal of the second resistor and an electrical ground terminal. A voltage clamp is coupled between the sense node and the electrical ground terminal.

Abstract: Techniques for providing an on-demand development environment are described. A service of a provider network receives a request to launch a development environment, such as a notebook, from an electronic device. The service obtains an identification of a computing cluster hosted by the provider network. The service obtains an identification of a compute instance hosted within the provider network, the compute instance executing a software environment to host one or more development environments. The service causes the compute instance to launch a development environment. The service sends a message to configure the launched development environment to execute a computer program written in the development environment using the computing cluster. The service generates a token to secure communications between the electronic device and the development environment and sends the token to an originator of the request.

Abstract: In an example, a circuit includes a first power switch device coupled between a voltage input and an output terminal, the first power switch device having a control input. A voltage divider circuit includes a first resistor and a second resistor. The first resistor is coupled between the voltage input and a sense node between the first resistor and the second resistor. The second resistor has a first terminal coupled to the sense node and a second terminal. A second switch device is coupled between the second terminal of the second resistor and an electrical ground terminal. A voltage clamp is coupled between the sense node and the electrical ground terminal.

Abstract: Mobile communication devices may use too much power and/or take too much time when camping on a particular mobile communication network. An apparatus may implement functions that may decrease power usage and/or decrease time usage. The apparatus may be a UE configured to measure energy levels for each frequency channel of a set of frequency channels in a frequency band to determine measured energy levels. The apparatus may also be configured to determining whether a first cell that operates using a first RAT is detected on a frequency channel of the set of frequency channels based on the measured energy levels. Additionally, the apparatus may be configured to search for a second cell that operates using a second RAT, when no cell for the first RAT is detected on the set of frequency channels, wherein the UE searches for the second cell using the measured energy levels.

Abstract: In some examples, a circuit includes an input circuit, an output circuit, an auxiliary circuit, and a balancing circuit. The input circuit comprises a primary capacitor coupled to primary windings of a transformer. The output circuit comprises a secondary capacitor coupled to secondary windings of the transformer, wherein the secondary windings are coupled to the primary windings. The auxiliary circuit comprises auxiliary windings coupled to the primary windings. The balancing circuit is coupled to the output circuit, the auxiliary circuit, and the input circuit. The balancing circuit is configured to balance a voltage across the primary capacitor with a voltage across the secondary capacitor.

Abstract: Mobile communication devices may use too much power and/or take too much time when camping on a particular mobile communication network. An apparatus may implement functions that may decrease power usage and/or decrease time usage. The apparatus may be a UE configured to measure energy levels for each frequency channel of a set of frequency channels in a frequency band to determine measured energy levels. The apparatus may also be configured to determining whether a first cell that operates using a first RAT is detected on a frequency channel of the set of frequency channels based on the measured energy levels. Additionally, the apparatus may be configured to search for a second cell that operates using a second RAT, when no cell for the first RAT is detected on the set of frequency channels, wherein the UE searches for the second cell using the measured energy levels.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to replacement metal gate structures and methods of manufacture. The structure includes at least one short channel device including a dielectric material, a workfunction metal, and a capping material, and a long channel device comprising the dielectric material, the workfunction metal and fluorine free gate conductor material.

Abstract: A method of forming a gate structure with an undercut region includes, among other things, forming a plurality of fins above a substrate and an isolation structure above the substrate and between the plurality of fins, forming a placeholder gate structure above the plurality of fins in a first region and above the isolation structure in a second region, selectively removing a portion of the placeholder structure in the second region to define an undercut recess, forming a spacer structure adjacent the sacrificial gate structure, forming a dielectric layer adjacent the spacer structure and in the undercut recess, removing remaining portions of the placeholder gate structure to define a gate cavity, and forming a replacement gate structure in the gate cavity.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A system includes an isolated converter having a power transformer with a primary winding, a secondary winding, and an auxiliary winding. The system also includes: 1) a first switch coupled to the primary winding; 2) a switch controller coupled to the first switch; and 3) a bias power regulator circuit coupled to the auxiliary winding and the switch controller. The bias power regulator circuit includes a second switch. The bias power regulator circuit is configured to provide a bias supply output voltage to the switch controller based on a first set of modes that modulate a switching frequency of the second switch and based on a second mode in which the second switch stays off.

Abstract: A method of forming a gate structure with an undercut region includes, among other things, forming a plurality of fins above a substrate and an isolation structure above the substrate and between the plurality of fins, forming a placeholder gate structure above the plurality of fins in a first region and above the isolation structure in a second region, selectively removing a portion of the placeholder structure in the second region to define an undercut recess, forming a spacer structure adjacent the sacrificial gate structure, forming a dielectric layer adjacent the spacer structure and in the undercut recess, removing remaining portions of the placeholder gate structure to define a gate cavity, and forming a replacement gate structure in the gate cavity.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed for adaptive synchronous rectifier control. An example apparatus includes an adaptive off-time control circuit to determine a first voltage and a second voltage when a drain voltage of a switch satisfies a voltage threshold, the first voltage based on a first off-time of the switch, the second voltage based on the first off-time and a first scaling factor, determine a third voltage based on a second scaling factor and a second off-time of the switch, the second off-time after the first off-time, and determine a third off-time of the switch based on at least one of the second voltage or the third voltage. The example apparatus further includes a driver to turn off the switch for at least the third off-time after the second off-time.

Abstract: Certain aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment may receive extended access barring (EAB) information indicating whether the UE is subject to EAB. The UE may output an indication of whether the UE is subject to EAB based at least in part on receiving the EAB information. Numerous other aspects are provided.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A integrated circuit including an n-doped high-k dielectric layer conformally within a first opening in a dielectric layer such that the n-doped high-k dielectric layer is in direct contact with a portion of a substrate exposed at a bottom of the first opening, a p-doped high-k dielectric layer conformally within a second opening in the dielectric layer such that the p-doped high-k dielectric layer is in direct contact with a portion of the substrate exposed at a bottom of the second opening, a shared work function metal conformally within the first opening and the second opening above and in direct contact with both the p-doped high-k dielectric layer and the n-doped high-k dielectric layer, and a bulk fill material above and in direct contact with the shared work function metal.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: A method for forming a replacement metal gate structure sharing a single work function metal for both the N-FET and the P-FET gates. The method oppositely dopes a high-k material of the N-FET and P-FET gate, respectively, using a single lithography step. The doping allows use of a single work function metal which in turn provides more space in the metal gate opening so that a bulk fill material may occupy more volume of the opening resulting in a lower resistance gate.

Abstract: In an exemplary method, a dielectric layer is deposited on a substrate. A masking layer is formed over a first region and a second region of the dielectric layer. The masking layer is made of an oxide of lanthanum. The masking layer is removed from the second region of the dielectric layer. A work function layer is formed directly on only the second region of the dielectric layer. The work function layer is made of titanium nitride that is formed by using a combination of titanium tetrachloride and ammonia (TiCl4/NH3).

Abstract: A synchronous rectifier controller integrated circuit. The synchronous rectifier controller integrated circuit comprises a continuous current mode (CCM) detection circuit configured to detect CCM operation based on sensing a voltage at a pre-defined point in a rectification cycle; a multiplexer having a first reference voltage signal input, a second reference voltage signal input, an output, and a selector input coupled to the CCM detection circuit; and a gate voltage driver circuit coupled to the output of the multiplexer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.