Patents by Inventor Baochun Cui

Baochun Cui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a lead including aluminum
    Patent number: 5623157
    Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: April 22, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto