Patents by Inventor Baochun Cui
Baochun Cui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8294152Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: February 15, 2011Date of Patent: October 23, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20110133201Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: February 15, 2011Publication date: June 9, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Minoru MIYAZAKI, Akane MURAKAMI, Baochun CUI, Mutsuo YAMAMOTO
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Patent number: 7897972Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: June 2, 2009Date of Patent: March 1, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20090236607Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: June 2, 2009Publication date: September 24, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Minoru MIYAZAKI, Akane MURAKAMI, Baochun CUI, Mutsuo YAMAMOTO
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Patent number: 7547916Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: June 7, 2006Date of Patent: June 16, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20070012923Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: June 7, 2006Publication date: January 18, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 7105898Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: December 28, 2004Date of Patent: September 12, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 7061016Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: August 15, 2003Date of Patent: June 13, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 7045399Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: July 17, 2003Date of Patent: May 16, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20050145847Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 ?, e.g., between 100 and 750 ?. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: December 28, 2004Publication date: July 7, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20040051102Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: August 15, 2003Publication date: March 18, 2004Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20040023445Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: July 17, 2003Publication date: February 5, 2004Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 6608353Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: July 12, 2002Date of Patent: August 19, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Publication number: 20020179969Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: ApplicationFiled: July 12, 2002Publication date: December 5, 2002Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 6448612Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: November 2, 2000Date of Patent: September 10, 2002Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 6166414Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: August 25, 1999Date of Patent: December 26, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 6031290Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: March 13, 1998Date of Patent: February 29, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 5808315Abstract: According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.Type: GrantFiled: December 19, 1996Date of Patent: September 15, 1998Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akane Murakami, Baochun Cui, Minoru Miyazaki
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Patent number: 5804878Abstract: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.Type: GrantFiled: April 24, 1996Date of Patent: September 8, 1998Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Patent number: 5677240Abstract: According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.Type: GrantFiled: May 26, 1995Date of Patent: October 14, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akane Murakami, Baochun Cui, Minoru Miyazaki