Abstract: Structures and processes include a single metallization step for forming a metal nitride liner layer suitable for contact formation. The structure and processes generally includes forming a nitrogen-enriched surface in a deposited metal liner layer or forming a nitrogen-enriched surface in the dielectric material prior to deposition of the metal liner layer. In this manner, nitridization of the metal occurs upon deposition of nitrogen ions into the metal liner layer and/or as a function of additional conventional processing in fabricating the integrated circuit such that the deposited nitrogen ions diffuse into at least a portion of the metal liner layer. As a consequence, only a single metal layer deposition step is needed to form the metal liner layer.

Abstract: Structures and processes include a single metallization step for forming a metal nitride liner layer suitable for contact formation. The structure and processes generally includes forming a nitrogen-enriched surface in a deposited metal liner layer or forming a nitrogen-enriched surface in the dielectric material prior to deposition of the metal liner layer. In this manner, nitridization of the metal occurs upon deposition of nitrogen ions into the metal liner layer and/or as a function of additional conventional processing in fabricating the integrated circuit such that the deposited nitrogen ions diffuse into at least a portion of the metal liner layer. As a consequence, only a single metal layer deposition step is needed to form the metal liner layer.

Abstract: Disclosed are methods for improving integrated circuit (IC) chip reliability. IC chips are manufactured and sorted into groups corresponding to process windows within a process distribution for the design. Group fail rates are set for each group based on failure mechanism fail rates, which are set for multiple failure mechanisms. An overall fail rate is determined for the full process distribution based on the group fail rates. First contribution amounts of the groups to the overall fail rate and second contribution amounts of the failure mechanisms to the group fail rate of each group are determined. Based on an analysis of the contribution amounts, at least one specific failure mechanism is selected and targeted for improvement (i.e., changes directed to the specific failure mechanism(s) are proposed and implemented). Optionally, proposed change(s) are only implemented if they will be sufficient to meet a reliability requirement and/or will not be cost-prohibitive.

Abstract: Aspects of the present disclosure include a computer-implemented method for identifying an operating temperature of an integrated circuit (IC), the method including using a computing device for: applying a test voltage to a test circuit embedded within the IC, the test circuit including a phase shift memory (PSM) element therein, wherein the PSM element crystallizes at a crystallization temperature from an amorphous phase having a first electrical resistance into a crystalline phase having a second electrical resistance, the second electrical resistance being less than the first electrical resistance; and identifying the IC as having operated above the crystallization temperature in response to a resistance of the test circuit at the test voltage being outside of the target operating range.

Abstract: In the systems and methods, an identifier is generated for a printed circuit board (PCB), chips are connected to the PCB, and corresponding sets of programmable bits on the chips are programmed to match specific sections of the identifier. Due to the generation of the identifier and the programming of the corresponding sets of programmable bits on the chips to match specific sections of the identifier, the validity of the chips can be verified at any time during product life. For example, for each chip, its set of programmable bits can be read and, then, a determination can be made as to whether that set of programmable bits is indeed programmed to match a specific section of the identifier. Operation of the PCB can be allowed when all the chips are determined to be valid and prohibited when any of the chips are determined to be invalid (e.g., previously used).

Abstract: A method of tailoring BEOL RC parametrics to improve chip performance. According to the method, an integrated circuit design on an integrated circuit chip is analyzed. The analysis comprises calculating Vmax for vias and metal lines in the integrated circuit design over a range of sizes for the vias and the metal lines. Predicted use voltage for applications on the integrated circuit chip is determined. The size or the location of at least one of the vias and the metal lines is tailored based on performance parameters of the integrated circuit chip.

Abstract: A dual damascene structure with an embedded liner and methods of manufacture are disclosed. The method includes forming a dual damascene structure in a substrate. The method further includes reflowing a seed layer such that material of the seed layer flows into a via of the dual damascene structure. The method further includes forming a liner material on the material over or within the via of the dual damascene structure. The method further includes filling any remaining portions of the via and a trench of the dual damascene structure with additional material.

Abstract: An interconnect structure includes a dielectric layer with one or more trenches extending therein, one or more interconnect lines, and one or more first liner layers. Each interconnect line is positioned within a trench. At least one first liner layer is affixed between the trench bottom surface and the interconnect bottom surface. The interconnect structure further includes one or more second liner layers. At least one of the second liner layers is affixed directly to the interconnect top surface and at least one interconnect side surface. The interconnect structure further includes at least one air gap. Each air gap is positioned between the trench side surface and the interconnect side surface. A corresponding method of manufacture and product of a method of manufacture are also disclosed.

Abstract: An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.

Abstract: Optimized metal wires for resistance or electromigration, methods of manufacturing thereof and design methodologies are disclosed. The method includes depositing metal material within openings and on a surface of dielectric material resulting in metal filled openings and a topography of recessed areas aligned with the metal filled openings. The method further includes depositing an alloying material over the metal material, including within the recessed areas. The method further includes planarizing the metal material, leaving the alloying material within the recessed areas. The method further includes diffusing the alloying material into the metal material forming alloyed regions self-aligned with the metal filled openings.

Abstract: Disclosed is a method for performing reliability qualification of manufactured integrated circuit (IC) chips. In the method, IC chips are manufactured according to a design and sorted into groups, which correspond to different process windows within a process distribution for the design. Group fail rates are determined for the groups. Reliability qualification of the manufactured IC chips is performed. Specifically, a sample of the IC chips is stress tested and the manufactured IC chips are qualified if the actual fail rate of the sample is no greater than an expected fail rate. The expected fail rate used is not, however, the expected overall fail rate for all the manufactured IC chips. Instead it is a unique expected fail rate for the specific sample itself and it is determined considering fail rate contributions from only those specific groups of IC chips from which the IC chips in the sample were selected.

Abstract: Optimized metal wires for resistance or electromigration, methods of manufacturing thereof and design methodologies are disclosed. The method includes depositing metal material within openings and on a surface of dielectric material resulting in metal filled openings and a topography of recessed areas aligned with the metal filled openings. The method further includes depositing an alloying material over the metal material, including within the recessed areas. The method further includes planarizing the metal material, leaving the alloying material within the recessed areas. The method further includes diffusing the alloying material into the metal material forming alloyed regions self-aligned with the metal filled openings.

Abstract: Disclosed are methods for improving integrated circuit (IC) chip reliability. IC chips are manufactured and sorted into groups corresponding to process windows within a process distribution for the design. Group fail rates are set for each group based on failure mechanism fail rates, which are set for multiple failure mechanisms. An overall fail rate is determined for the full process distribution based on the group fail rates. First contribution amounts of the groups to the overall fail rate and second contribution amounts of the failure mechanisms to the group fail rate of each group are determined. Based on an analysis of the contribution amounts, at least one specific failure mechanism is selected and targeted for improvement (i.e., changes directed to the specific failure mechanism(s) are proposed and implemented). Optionally, proposed change(s) are only implemented if they will be sufficient to meet a reliability requirement and/or will not be cost-prohibitive.

Abstract: Methods and test structures for testing the reliability of a dielectric material. The test structure may include a first row of contacts and a line comprised of a conductor. The line is laterally spaced in a direction at a minimum distance from the first row of contacts. The test structure further includes a second row of contacts laterally spaced in the direction from the first row of contacts by a distance equal to two times a minimum pitch. The line is laterally positioned between the first row of contacts and the second row of contacts.

Abstract: An interconnect structure includes a dielectric layer with one or more trenches extending therein, one or more interconnect lines, and one or more first liner layers. Each interconnect line is positioned within a trench. At least one first liner layer is affixed between the trench bottom surface and the interconnect bottom surface. The interconnect structure further includes one or more second liner layers. At least one of the second liner layers is affixed directly to the interconnect top surface and at least one interconnect side surface. The interconnect structure further includes at least one air gap. Each air gap is positioned between the trench side surface and the interconnect side surface. A corresponding method of manufacture and product of a method of manufacture are also disclosed.

Abstract: Disclosed is a method for improving integrated circuit (IC) chip reliability. In the method, IC chips, which are manufactured according to a given IC chip design, are sorted into multiple different groups associated with different process windows in the process distribution for the design. Different operating voltages are assigned to the different groups, respectively, in order to optimize overall reliability of IC chips across the process distribution. That is, each group is associated with a specific process window, comprises a specific portion of the IC chips and is assigned a group-specific operating voltage that minimizes the fail rate of the specific portion of the IC chips and that, thereby optimizes the reliability of the specific portion of the IC chips. The group-specific operating voltage will be within minimum and maximum voltages associated with either the process distribution or the specific process window (e.g., following power-optimized selective voltage binning).

Abstract: Disclosed is an integrated circuit (IC) chip having an on-chip usable life depletion meter. This meter incorporates programmable bits, which represent units of usable life. These programmable bits are sequentially ordered from an initial programmable bit to a last programmable bit and are automatically programmed in order, as the expected usable life of the IC chip is depleted. These programmable bits are readable to determine the remaining usable life of the IC chip. Also disclosed is a method that uses the on-chip usable life depletion meter. In the method, the remaining usable life of an IC chip, once known, is used either as the basis for allowing re-use of the IC chip (e.g., for a non-critical application and when the remaining usable life is sufficient) or as the basis for preventing re-use of the IC chip (e.g., for a critical application or when the remaining usable life is insufficient).

Abstract: An electromigration test structure is provided for evaluation of interconnect liner integrity in a semiconductor interconnect structure. The electromigration test structure includes a feeding line; a stress line overlying the feeding line; a first via interconnecting the feeding line and the stress line, wherein the first via comprises a bottom barrier; a first cathode sense and a second cathode sense interconnected to the feeding line; and a first anode sense and a second anode sense interconnected to the feeding line.

Abstract: Aspects of the present disclosure include a computer-implemented method for identifying an operating temperature of an integrated circuit (IC), the method including using a computing device for: applying a test voltage to a test circuit embedded within the IC, the test circuit including a phase shift memory (PSM) element therein, wherein the PSM element crystallizes at a crystallization temperature from an amorphous phase having a first electrical resistance into a crystalline phase having a second electrical resistance, the second electrical resistance being less than the first electrical resistance; and identifying the IC as having operated above the crystallization temperature in response to a resistance of the test circuit at the test voltage being outside of the target operating range.

Abstract: In the systems and methods, an identifier is generated for a printed circuit board (PCB), chips are connected to the PCB, and corresponding sets of programmable bits on the chips are programmed to match specific sections of the identifier. Due to the generation of the identifier and the programming of the corresponding sets of programmable bits on the chips to match specific sections of the identifier, the validity of the chips can be verified at any time during product life. For example, for each chip, its set of programmable bits can be read and, then, a determination can be made as to whether that set of programmable bits is indeed programmed to match a specific section of the identifier. Operation of the PCB can be allowed when all the chips are determined to be valid and prohibited when any of the chips are determined to be invalid (e.g., previously used).