Patents by Inventor Barbara Foley Barenburg

Barbara Foley Barenburg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6965128
    Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: November 15, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Paige M. Holm, Barbara Foley Barenburg, Joyce K. Yamamoto, Fred V. Richard
  • Publication number: 20040150043
    Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate.
    Type: Application
    Filed: February 3, 2003
    Publication date: August 5, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Paige M. Holm, Barbara Foley Barenburg, Joyce K. Yamamoto, Fred V. Richard
  • Publication number: 20040043479
    Abstract: The invention relates generally to methods and apparatus for conducting analyses, particularly microfluidic devices. In preferred aspects, the devices are fabricated using ceramic multilayer technology to form devices in which parallel, independently controlled molecular reactions, such as nucleic acid amplification reactions including the polymerase chain reaction (PCR) can be performed. Additionally, the devices can include and comprise micro-gas chromatographs similarly fabricated from ceramics.
    Type: Application
    Filed: November 14, 2002
    Publication date: March 4, 2004
    Inventors: Cynthia G. Briscoe, Jeremy W. Burdon, Tony Chan, Barbara Foley Barenburg, Piotr Grodzinski, George Hawkins, Rong-Fong Huang, Peter Kahn, Robert Marcero, Mark W. McGarry, Todd Tuggle, Huinan Yu
  • Patent number: 6605454
    Abstract: A microwave device has a monolithic microwave integrated circuit (MMIC) disposed therein for applying microwave radiation to a microfluidic structure, such as a chamber, defined in the device. The microwave radiation from the MMIC is useful for heating samples introduced into the microfluidic structure and for effecting lysis of cells in the samples. Microfabrication techniques allow the fabrication of MMICs that perform heating and cell lysing of samples having volumes in the microliter to picoliter range.
    Type: Grant
    Filed: March 22, 2001
    Date of Patent: August 12, 2003
    Assignee: Motorola, Inc.
    Inventors: Barbara Foley Barenburg, Jeremy Burdon, Yuk-Tong Chan, Xunhu Dai, Sean Gallagher, Piotr Grodzinski, Robert Marrero, Vijay Nair, David Rhine, Thomas Smekal
  • Patent number: 6594414
    Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: July 15, 2003
    Assignee: Motorola, Inc.
    Inventors: Aroon Tungare, Keryn Lian, Robert Lempkowski, Barbara Foley Barenburg
  • Publication number: 20030034535
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Jonathan F. Gorrell, Kenneth D. Cornett
  • Publication number: 20030034551
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicone oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Timothy Brophy
  • Publication number: 20030034538
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Timothy J. Brophy, Barbara Foley Barenburg, Amarildo Vieira, Kerry I. Litvin
  • Publication number: 20030030062
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: August 9, 2001
    Publication date: February 13, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Paige M. Holm, Barbara Foley Barenburg, Fred Richard, Joyce Yamamoto
  • Publication number: 20030026515
    Abstract: The present invention provides a wavelength-tunable optical device structure which monolithically integrates both active and passive device components on a single substrate. Monolithically-integrated active and passive optical device components may be fabricated by growing high-quality active optical devices, such as optical emitters and optical detectors, on a single substrate and using electro-optical crystalline oxide materials to tune optical devices, such as directional couplers, to transmit radiation having selected wavelengths. In this manner, cost-effective, monolithically-integrated, tunable wavelength multiplexers and/or demultiplexers may be formed.
    Type: Application
    Filed: August 1, 2001
    Publication date: February 6, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Joyce Yamamoto
  • Publication number: 20030025116
    Abstract: A semiconductor laminate configured for dividing into predetermined parts has a lateral expanse and includes: (a) a monocrystalline substrate substantially coterminous with the lateral expanse; (b) at least one layer including a monocrystalline compound semiconductor material; and (c) at least one intermediate layer substantially separating the substrate and the compound semiconductor material. The at least one compound semiconductor material layer is arrayed to present intervals substantially devoid of the monocrystalline compound semiconductor material that generally establish lateral limits of the predetermined parts.
    Type: Application
    Filed: August 1, 2001
    Publication date: February 6, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Robert J. Higgins, Barbara Foley Barenburg, Joseph P. Heck, Jonathan F. Gorrell
  • Publication number: 20030026311
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: August 6, 2001
    Publication date: February 6, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Fred Richard, Joyce Yamamoto
  • Publication number: 20030021014
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. The compliant substrate includes an optical laser array configured as a linear optical amplifier.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Fred V. Richard
  • Publication number: 20030022520
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Light-assisted deposition techniques are used to form the accommodating buffer layer (24).
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Alexander A. Demkov, Zhiyi Yu, Barbara Foley Barenburg
  • Publication number: 20030022414
    Abstract: A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Keryn Lian, Marc Chason, Daniel Gamota, Barbara Foley Barenburg
  • Publication number: 20030020078
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical processing layers can be placed on monocrystalline layers to process photons produced in the monocrystalline layers.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Tomasz Klosowiak, Kevin Jelley, George Valliath, Barbara Foley Barenburg, Daniel Gamota
  • Publication number: 20030021571
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Keryn Lian, Aroon V. Tungare, Barbara Foley Barenburg
  • Publication number: 20030021520
    Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Aroon Tungare, Keryn Lian, Robert Lempkowski, Barbara Foley Barenburg
  • Publication number: 20030017640
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 23, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Joyce Yamamoto
  • Publication number: 20030008527
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing laser irradiation in conjunction with molecular beam epitaxy growth techniques.
    Type: Application
    Filed: July 3, 2001
    Publication date: January 9, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Barbara Foley Barenburg, Lyndee L. Hilt