Patents by Inventor Barry A. Hoberman
Barry A. Hoberman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9722605Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: April 25, 2016Date of Patent: August 1, 2017Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20160315615Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: April 25, 2016Publication date: October 27, 2016Applicant: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 9350349Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: September 8, 2014Date of Patent: May 24, 2016Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20140375354Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: September 8, 2014Publication date: December 25, 2014Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 8854077Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: August 8, 2012Date of Patent: October 7, 2014Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20130027125Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: August 8, 2012Publication date: January 31, 2013Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 8253438Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: March 29, 2011Date of Patent: August 28, 2012Assignee: Mosaid Technologies IncorporatedInventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20110260785Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: March 29, 2011Publication date: October 27, 2011Applicant: MOSAID Technologies IncorporatedInventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 7940081Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: August 17, 2009Date of Patent: May 10, 2011Assignee: MOSAID Technologies IncorporatedInventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20100060319Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: August 17, 2009Publication date: March 11, 2010Applicant: MOSAID Technologies CorporationInventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 7592837Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: September 19, 2008Date of Patent: September 22, 2009Assignee: MOSAID Technologies CorporationInventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20090027080Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: September 19, 2008Publication date: January 29, 2009Applicant: Mosaid Technologies, Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 7443197Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: November 30, 2007Date of Patent: October 28, 2008Assignee: Mosaid Technologies, Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 7348804Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: April 2, 2007Date of Patent: March 25, 2008Assignee: MOSAID Delaware, Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 7227383Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: January 20, 2005Date of Patent: June 5, 2007Assignee: Mosaid Delaware, Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 5490257Abstract: A method for detecting a half-full condition of a first-in, first-out memory array. The method of the invention includes the steps of a) moving a write pointer through the array to write data to alternating rows of the memory array; b) moving a read pointer through the array to read data from the alternating rows of the memory array in first-in, first-out order; and c) providing a half-full indication when the read pointer and the write pointer point to adjacent rows in the memory array. This method eliminates the need to route lines across the array to detect a half-full condition, thereby reducing die and power requirements and offering an increase in speed.Type: GrantFiled: February 24, 1992Date of Patent: February 6, 1996Assignee: Advanced Micro Devices, Inc.Inventors: Barry A. Hoberman, Stuart T. Auvinen, Patrick Wang, David Wang
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Patent number: 4954987Abstract: An interleaved sensing system for decreasing the read access time in a sequential memory includes a sequential memory array formed of a plurality of memory cells for storing data. The memory cells are arranged in a plurality of odd columns and a plurality of even columns. Sensing means are provided for interleaving the stored data in the memory cells in the odd columns with the stored data in the memory cells in the even columns. An output buffer is coupled to the sensing means for generating data output representing alternately the stored data in the odd and even columns during alternate read cycles.Type: GrantFiled: July 17, 1989Date of Patent: September 4, 1990Assignee: Advanced Micro Devices, Inc.Inventors: Stuart T. Auvinen, Barry A. Hoberman
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Patent number: 4947060Abstract: A novel output stage is disclosed which includes first and second output transistors for providing complementary output signals at inverting and noninverting output terminals in response to receipt of an input signal, wherein the output stage includes a single source of current and a pair of current steering transistors which are controlled by circuit means coupled between the input terminal and the control terminals of the current steering transistors to turn on the one of the current steering transistors which is coupled to the one of the inverting and noninverting output terminals which is undergoing a high voltage to low voltage transition and to turn off the other of the current steering transistors in response to the change of state of the input signal received at an input terminal.Type: GrantFiled: March 17, 1989Date of Patent: August 7, 1990Assignee: Advanced Micro Devices, Inc.Inventors: Barry A. Hoberman, William E. Moss
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Patent number: 4864165Abstract: A novel ECL Programmable Logic Array (PLA) is provided which operates as an ECL PLA, having ECL voltage level compatible input and output leads, thereby providing a high-speed PLA. A unique programming means is provided which allows the ECL PLA to be programmed using TTL-compatible programming voltage levels, such as are provided by common and inexpensive prior art TTL PLA programmers. In another embodiment higher speed is achieved by the design of each sense amplifier using emitter function logic such that the sense transistor and load functions a cascode amplifier. In another embodiment a lower power PLA device is achieved by utilizing a switched current source pull down means for pulling down the rows of the PLA array. In another embodiment low power and user convenience is achieved by allowing each pair of output terminals to share a predefined set of product terms.Type: GrantFiled: January 5, 1988Date of Patent: September 5, 1989Assignee: Advanced Micro Devices, Inc.Inventors: Barry A. Hoberman, William E. Moss
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Patent number: 4862419Abstract: A FIFO memory system organizes a memory with N word storage locations into M pointer-based random access memories, each containing N/M storage locations. A sequence of data words is written into and read out of the M RAMs in a cyclical fashion. An M fold increase in write rate is obtained by an input control logic which causes all M RAMs to be in a different stage of the shift-in cycle at the same time. Similarly, an M fold increase in read rate is obtained by an output control logic which causes all M RAMs to be simultaneously in a different stage of the shift-out cycle. The output signals of the RAMs being read are multiplexed to generate the original sequence.Type: GrantFiled: September 16, 1986Date of Patent: August 29, 1989Assignee: Advanced Micro Devices, Inc.Inventor: Barry A. Hoberman