Patents by Inventor Barry A. Hoberman
Barry A. Hoberman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10424393Abstract: Dynamic redundancy buffers for use with a device are disclosed. The dynamic redundancy buffers allow a memory array of the device to be operated with high write error rate (WER). A first level redundancy buffer (e1 buffer) is couple to the memory array. The e1 buffer may store data words that have failed verification or have not been verified. The e1 buffer may transfer data words to another dynamic redundancy buffer (e2 buffer). The e1 buffer may transfer data words that have failed to write to a memory array after a predetermined number of re-write attempts. The e1 buffer may also transfer data words upon power down.Type: GrantFiled: December 20, 2017Date of Patent: September 24, 2019Assignee: SPIN MEMORY, INC.Inventors: Mourad El Baraji, Neal Berger, Benjamin Stanley Louie, Lester M. Crudele, Daniel L. Hillman, Barry Hoberman
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Patent number: 10366775Abstract: Dynamic redundancy buffers for use with a device are disclosed. The dynamic redundancy buffers allow a memory array of the device to be operated with high write error rate (WER). A first level redundancy buffer (e1 buffer) is couple to the memory array. The e1 buffer may store data words that have failed verification or have not been verified. The e1 buffer may transfer data words to another dynamic redundancy buffer (e2 buffer). The e1 buffer may transfer data words that have failed to write to a memory array after a predetermined number of re-write attempts. The e1 buffer may also transfer data words upon power down.Type: GrantFiled: December 20, 2017Date of Patent: July 30, 2019Assignee: SPIN MEMORY, INC.Inventors: Mourad El-Baraji, Neal Berger, Benjamin Stanley Louie, Lester M Crudele, Daniel L Hillman, Barry Hoberman
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Patent number: 10366774Abstract: Dynamic redundancy registers for use with a device are disclosed. The dynamic redundancy registers allow a memory bank of the device to be operated with high write error rate (WER). A first level redundancy register (e1 register) is couple to the memory bank. The e1 register may store data words that have failed verification or have not been verified. The e1 register may transfer data words to another dynamic redundancy register (e2 register). The e1 register may transfer data words that have failed to write to a memory bank after a predetermined number of re-write attempts. The e1 register may also transfer data words upon power down.Type: GrantFiled: September 27, 2016Date of Patent: July 30, 2019Assignee: Spin Memory, Inc.Inventors: Mourad El Baraji, Neal Berger, Benjamin Stanley Louie, Lester M. Crudele, Daniel L. Hillman, Barry Hoberman
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Publication number: 20180114590Abstract: Dynamic redundancy buffers for use with a device are disclosed. The dynamic redundancy buffers allow a memory array of the device to be operated with high write error rate (WER). A first level redundancy buffer (e1 buffer) is couple to the memory array. The e1 buffer may store data words that have failed verification or have not been verified. The e1 buffer may transfer data words to another dynamic redundancy buffer (e2 buffer). The e1 buffer may transfer data words that have failed to write to a memory array after a predetermined number of re-write attempts. The e1 buffer may also transfer data words upon power down.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Inventors: Mourad EL-BARAJI, Neal BERGER, Benjamin Stanley LOUIE, Lester M CRUDELE, Daniel L HILLMAN, Barry HOBERMAN
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Publication number: 20180114589Abstract: Dynamic redundancy buffers for use with a device are disclosed. The dynamic redundancy buffers allow a memory array of the device to be operated with high write error rate (WER). A first level redundancy buffer (e1 buffer) is couple to the memory array. The e1 buffer may store data words that have failed verification or have not been verified. The e1 buffer may transfer data words to another dynamic redundancy buffer (e2 buffer). The e1 buffer may transfer data words that have failed to write to a memory array after a predetermined number of re-write attempts. The e1 buffer may also transfer data words upon power down.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Inventors: Mourad EL-BARAJI, Neal BERGER, Benjamin Stanley LOUIE, Lester M. CRUDELE, Daniel L. HILLMAN, Barry HOBERMAN
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Publication number: 20180090226Abstract: Dynamic redundancy registers for use with a device are disclosed. The dynamic redundancy registers allow a memory bank of the device to be operated with high write error rate (WER). A first level redundancy register (e1 register) is couple to the memory bank. The e1 register may store data words that have failed verification or have not been verified. The e1 register may transfer data words to another dynamic redundancy register (e2 register). The e1 register may transfer data words that have failed to write to a memory bank after a predetermined number of re-write attempts. The e1 register may also transfer data words upon power down.Type: ApplicationFiled: September 27, 2016Publication date: March 29, 2018Inventors: Mourad EL BARAJI, Neal BERGER, Benjamin Stanley LOUIE, Lester M. CRUDELE, Daniel L. HILLMAN, Barry Hoberman
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Patent number: 9722605Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: April 25, 2016Date of Patent: August 1, 2017Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Publication number: 20160315615Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: April 25, 2016Publication date: October 27, 2016Applicant: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 9395210Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: GrantFiled: November 24, 2014Date of Patent: July 19, 2016Assignee: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Patent number: 9395209Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: GrantFiled: November 24, 2014Date of Patent: July 19, 2016Assignee: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Patent number: 9350349Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: September 8, 2014Date of Patent: May 24, 2016Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 9310223Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: GrantFiled: November 24, 2014Date of Patent: April 12, 2016Assignee: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Patent number: 9267816Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: GrantFiled: November 24, 2014Date of Patent: February 23, 2016Assignee: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Patent number: 9228855Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: GrantFiled: March 6, 2013Date of Patent: January 5, 2016Assignee: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Publication number: 20150077097Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: ApplicationFiled: November 24, 2014Publication date: March 19, 2015Applicant: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Publication number: 20150077098Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: ApplicationFiled: November 24, 2014Publication date: March 19, 2015Applicant: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Publication number: 20150077096Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: ApplicationFiled: November 24, 2014Publication date: March 19, 2015Applicant: Crocus Technology Inc.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Publication number: 20150077095Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.Type: ApplicationFiled: November 24, 2014Publication date: March 19, 2015Applicant: CROCUS TECHNOLOGY INC.Inventors: Bertrand F. Cambou, Douglas J. Lee, Ken Mackay, Barry Hoberman
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Publication number: 20140375354Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: ApplicationFiled: September 8, 2014Publication date: December 25, 2014Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole
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Patent number: 8854077Abstract: An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.Type: GrantFiled: August 8, 2012Date of Patent: October 7, 2014Assignee: Conversant Intellectual Property Management Inc.Inventors: Barry A. Hoberman, Daniel L. Hillman, William G. Walker, John M. Callahan, Michael A. Zampaglione, Andrew Cole