Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Abstract: A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Abstract: Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.

Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Abstract: Large ring silacrown ethers having at least fourteen ring atoms with at least one lipophilic or hydrophobic substituent on the ring and/or on the silicon atom are provided. Pharmaceutical compositions containing these silacrown ethers and the use of these materials as therapeutic agents are also described.

Abstract: A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (RfCH2)nSnX(4-n)??(I).

Abstract: Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): in which R is a substituted or unsubstituted organic group and R? is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Abstract: A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described.

Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Abstract: Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.

Abstract: A thin film deposition process is provided. The process includes, in a single cycle, providing a precursor in the vapor phase with or without a carrier gas to a reaction zone containing a substrate, such that a monolayer of the precursor is adsorbed to a surface of the substrate and the adsorbed monolayer subsequently undergoes conversion to a discrete atomic or molecular layer of a thin film, without any intervening pulse of or exposure to other chemical species or co-reactants.

Abstract: Silicon-based cannabidiol derivatives and methods for their synthesis are provided, in which the derivatives contain a cannabidiol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in cosmetic and topical compositions, have potential beneficial topical properties, and enhance solubility and compatibility in cosmetic formulations containing the silicon-based materials. Silicone elastomers infused with compositions containing the silicon-based cannabidiol derivatives and trisiloxanes are also provided.

Abstract: A new class of cyclotrisiloxanes having hydridosiloxanylalkyl substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures.

Abstract: A new class of cyclotrisiloxanes having alkyl ether substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures. A new class of hydridosilylethylcyclotrisiloxanes is also described.