Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Abstract: A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.

Abstract: Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative ? substituent and at least one organofunctional silane or at least one metal alkoxide.

Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Abstract: A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Abstract: A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Abstract: Fluorinated alkyltin compounds having formula (I) and formula (IV) are described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, R? is a primary or secondary monofluoroalkyl group having about 2 to about 10 carbon atoms and R is a primary, secondary, or tertiary alkyl group having about 1 to about 4 carbon atoms. (RfCH2)nSnX(4-n)??(I) R?Sn(NR2)3??(IV) A method for forming a fluorinated oxostannate film from the fluorinated alkyl tin compounds is also provided.

Abstract: Silacrown ethers having at least eleven ring atoms and containing at least one substituted or unsubstituted unsaturated hydrocarbon, peptide, or peptoid substituent on the ring and/or on the silicon atom are provided. Azasilacrown ethers having at least eleven ring atoms and containing at least one substituted or unsubstituted, saturated or unsaturated hydrocarbon, peptide, or peptoid substituent on the ring and/or on the silicon atom are also described.

Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Abstract: Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.

Abstract: A method of protecting hair from damage by applying a long-chain unhydrolyzed alkyltrialkoxysilane to hair shafts and then hydrolyzing and polymerizing the alkyltrialkoxysilane to form a non-penetrating outer layer on the hair shaft by utilizing pH adjusted water followed by the application of heat. Alternatively, the alkyltrialkoxysilane may be applied to the hair in combination with an alkyl or alkenyl succinic anhydride prior to the application of heat.

Abstract: A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.

Abstract: Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.

Abstract: A method for producing a contact lens having a water contact angle below about 90° involves preparing a molding resin comprising a polyether modified polyolefin; forming the molding resin into a mold; preparing a contact lens composition; filling the contact lens composition into the mold; and polymerizing the contact lens composition to form a contact lens. A method of inducing water contact angle below 90° and improved surface wettability of a contact lens involves cast polymerizing a mixture of monomers in a mold formed from a molding resin containing a polyether modified polyolefin to form a contact lens having a water contact angle of less than about 90°. Single-use molds for contact lens manufacture are also provided.

Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.