Patents by Inventor Barry C. Arkles

Barry C. Arkles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220098732
    Abstract: A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.
    Type: Application
    Filed: September 27, 2021
    Publication date: March 31, 2022
    Inventors: Barry C. ARKLES, Alain E. KALOYEROS
  • Publication number: 20220073543
    Abstract: Large ring silacrown ethers having at least fourteen ring atoms with at least one lipophilic or hydrophobic substituent on the ring and/or on the silicon atom are provided. Pharmaceutical compositions containing these silacrown ethers and the use of these materials as therapeutic agents are also described.
    Type: Application
    Filed: September 1, 2021
    Publication date: March 10, 2022
    Inventors: Barry C. ARKLES, Jeffrey S. ARKLES
  • Patent number: 11248291
    Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: February 15, 2022
    Assignee: GELEST, INC.
    Inventors: Barry C. Arkles, Alain E. Kaloyeros
  • Patent number: 11236200
    Abstract: A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: February 1, 2022
    Assignee: GELEST, INC.
    Inventors: Barry C. Arkles, Jonathan D. Goff, Ferdinand Gonzaga
  • Publication number: 20210371981
    Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 2, 2021
    Inventors: Alain E. KALOYEROS, Barry C. ARKLES
  • Publication number: 20210309806
    Abstract: Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative ? substituent and at least one organofunctional silane or at least one metal alkoxide.
    Type: Application
    Filed: April 1, 2021
    Publication date: October 7, 2021
    Inventors: Barry C. ARKLES, Kerry Campbell DEMELLA, Jonathan D. GOFF
  • Publication number: 20210206786
    Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
    Type: Application
    Filed: March 24, 2021
    Publication date: July 8, 2021
    Inventors: Barry C. ARKLES, Youlin PAN, Fernando JOVE
  • Publication number: 20210140036
    Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.
    Type: Application
    Filed: January 19, 2021
    Publication date: May 13, 2021
    Inventors: Barry C. ARKLES, Alain E. KALOYEROS
  • Patent number: 11001599
    Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: May 11, 2021
    Assignee: GELEST TECHNOLOGIES, INC.
    Inventors: Barry C. Arkles, Youlin Pan, Fernando Jove
  • Patent number: 10995244
    Abstract: Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: May 4, 2021
    Assignee: GELEST TECHNOLOGIES, INC.
    Inventors: Barry C. Arkles, Youlin Pan
  • Patent number: 10961624
    Abstract: A thin film deposition process is provided. The process includes, in a single cycle, providing a precursor in the vapor phase with or without a carrier gas to a reaction zone containing a substrate, such that a monolayer of the precursor is adsorbed to a surface of the substrate and the adsorbed monolayer subsequently undergoes conversion to a discrete atomic or molecular layer of a thin film, without any intervening pulse of or exposure to other chemical species or co-reactants.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: March 30, 2021
    Assignee: GELEST TECHNOLOGIES, INC.
    Inventors: Barry C. Arkles, Alain E. Kaloyeros
  • Patent number: 10933008
    Abstract: Silicon-based cannabidiol derivatives and methods for their synthesis are provided, in which the derivatives contain a cannabidiol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in cosmetic and topical compositions, have potential beneficial topical properties, and enhance solubility and compatibility in cosmetic formulations containing the silicon-based materials. Silicone elastomers infused with compositions containing the silicon-based cannabidiol derivatives and trisiloxanes are also provided.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: March 2, 2021
    Assignee: GELEST TECHNOLOGIES, INC.
    Inventors: Barry C. Arkles, Jonathan D. Goff, Taewoo Min, Youlin Pan, Tatyana Abel-Roberman
  • Patent number: 10875968
    Abstract: A new class of cyclotrisiloxanes having hydridosiloxanylalkyl substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: December 29, 2020
    Assignee: GELEST TECHNOLOGIES, INC.
    Inventors: Jonathan D. Goff, Barry C. Arkles
  • Publication number: 20200337983
    Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.
    Type: Application
    Filed: March 9, 2020
    Publication date: October 29, 2020
    Inventors: Barry C. ARKLES, Jonathan D. GOFF, Alison Ane PHILLIPS, Kerry Campbell DEMELLA
  • Publication number: 20200317699
    Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.
    Type: Application
    Filed: March 23, 2020
    Publication date: October 8, 2020
    Inventors: Barry C. ARKLES, Richard J. LIBERATORE, Youlin PAN
  • Publication number: 20200318236
    Abstract: A thin film deposition process is provided. The process includes, in a single cycle, providing a precursor in the vapor phase with or without a carrier gas to a reaction zone containing a substrate, such that a monolayer of the precursor is adsorbed to a surface of the substrate and the adsorbed monolayer subsequently undergoes conversion to a discrete atomic or molecular layer of a thin film, without any intervening pulse of or exposure to other chemical species or co-reactants.
    Type: Application
    Filed: January 9, 2020
    Publication date: October 8, 2020
    Inventors: Barry C. ARKLES, Alain E. KALOYEROS
  • Patent number: 10669294
    Abstract: A new class of cyclotrisiloxanes having alkyl ether substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures. A new class of hydridosilylethylcyclotrisiloxanes is also described.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: June 2, 2020
    Assignee: Gelest Technologies, Inc.
    Inventors: Jonathan D. Goff, Barry C. Arkles
  • Publication number: 20200115498
    Abstract: A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Barry C. ARKLES, Jonathan D. GOFF, Ferdinand GONZAGA
  • Publication number: 20200010488
    Abstract: Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): in which R is a substituted or unsubstituted organic group and R? is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Barry C. ARKLES, Youlin PAN, Fernando JOVE
  • Publication number: 20200002583
    Abstract: Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.
    Type: Application
    Filed: September 6, 2019
    Publication date: January 2, 2020
    Inventors: Barry C. ARKLES, Youlin PAN