Abstract: A method for suppressing dark current in multi-phase CCD pixels of a CCD imaging device by transferring a charge packet at a first phase thereof at which surface depletion has occurred to a second phase thereof, while providing an inversion at the surface of the first phase. The transfer and inversion operations are performed before a dark current begins to be generated at the first phase. The charge packet at the second phase is then re-transferred back to the first phase and a surface inversion is produced at the second phase before a dark current begins to be generated at the second phase. Such transfer and inversion operations are repeated a number of times during the integration period of the imaging device so as to prevent dark current from being generated at any phase of the pixel.

Abstract: A charge domain digital-analog multiplier device. The device has one analog input, M-parallel digital inputs, and one analog output. An M-bit digital word signal is applied to the digital inputs and an analog signal is applied to the analog input. The output is a charge packet which is proportional to the product of the analog input signal and the digital word.

Abstract: A solid state device capable of providing long-term storage of analog signals which in a particular embodiment utilizes a plurality of MNOS storage elements. An input analog signal is applied to a plurality of temporary storage means each associated with an MNOS storage element for temporarily storing a charge proportional to the amplitude of the portion of the input analog signal applied thereto. Storage control means are used to transfer the temporarily stored charges to the long-term MNOS storage elements so that controlled amounts of carrier charges are stored in the nitride layers thereof, such controlled amounts being substantially linearly proportional to the temporarily stored charges associated therewith. In a particular embodiment the input analog signal may be supplied via a surface acoustic wave (SAW) device and coupled to the MNOS device directly or it may be coupled to a charge-coupled device (CCD) and thence coupled to the MNOS device.

Abstract: A solid state device combining the use of a surface-acoustic-wave (SAW) device and a charge-coupled device (CCD) which utilizes an interface means therebetween comprising a plurality of conductive fingers responsive to an acoustic wave on the SAW device. The conductive fingers are electrically connected at at least one end to the CCD substrate and a plurality of temporary storage means are used for temporarily storing a charge proportional to the voltage potential on the associated conductive finger. The temporary stored charges can be transferred to the storage wells of the CCD for storing a replica of the acoustic wave. The SAW-CCD combination is adapted for use as a buffer memory, an accumulating correlator, or as a matched filter device.