Abstract: A motor driven actuator device includes an actuator motor; a controller; an input for receiving an external power supply; and a battery pack electrically connected to selectively drive the actuator motor, and electrically connectable to the external power supply for charging. During charging of the battery pack, the controller is configured to compare a measured charge level with a pre-determined charge level required to complete at least two battery shutdown events under battery power alone. During subsequent actuator device operation, the controller is configured to: determine if the external power supply is invalid, instruct a battery shutdown event causing the battery to be discharged, with enough charge in the battery to complete at least one further battery shutdown event; and, subsequently detect when the external power supply becomes valid, and resume actuator device operation under the external power supply, while simultaneously recharging the battery pack to at least the pre-determined charge level.

Abstract: An integrated circuit device is disclosed including core circuitry and interface circuitry. The core circuitry outputs in parallel a set of data bits, while the interface circuitry couples to the core circuitry. The interface circuitry receives in parallel a first number of data bits among the set of data bits from the core circuitry and outputs in parallel a second number of data bits. The ratio of the first number to the second number is a non-power-of-2 value.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: The present disclosure provides pyrrolopyrimidine nucleoside analogs of the Formula I, Formula IA, Formula IB, or Formula II and phospholipid conjugates and pharmaceutical compositions thereof wherein Rc and A are defined herein. Also presented are methods of treating and/or preventing viral infection and/or viral infection-associated disease or disorder with one or more compounds of Formula I, Formula IA, Formula IB, or Formula II.

Abstract: Disclosed is a memory system including a memory component having at least one tag row and at least one data row and multiple ways to hold a data group as a cache-line or cache-block. The memory system includes a memory controller that is connectable to the memory component to implement a cache and operable with the memory controller and the memory component in each of a plurality of operating modes including a first and second operating mode having differing addressing and timing requirements for accessing the data group. The first operating mode having placement of each of at least two ways of a data group in differing rows in the memory component, with tag access and data access not overlapped. The second operating mode having placement of all ways of a data group in a same row in the memory component, with tag access and data access overlapped.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

Abstract: A monolithic integrated circuit that supports multiple industrial Ethernet protocols, fieldbus protocols, and industrial application processing, thereby providing a single hardware platform that may be used to build various automation devices/equipment implemented in an industrial network, such as controllers, field devices, network communication nodes, etc.

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: The present disclosure concerns hyperthermic devices for treating vascular involvements related to cancer therapies, such as surgery. In specific embodiments, the device is configured to provide therapeutic heating to destroy vessel-encasing tumors while still protecting the vessel itself. In particular embodiments, the devices utilize two opposing semi-cylindrical shells that encase the vessel in need of treatment of a tumor thereon. In other devices, a flexible substrate is guided under and around the vessel and tumor thereon.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: An integrated circuit including a plurality of processing components to process image data of a plurality of image frames, wherein each image frame includes a plurality of stages. Each processing component includes a plurality of execution pipelines, wherein each pipeline includes a plurality of multiplier-accumulator circuits configurable to perform multiply and accumulate operations using image data and filter weights, wherein: (i) a first processing component is configurable to process all of the data associated with a first plurality of stages of each image frame, and (ii) a second processing component of the plurality of processing components is configurable to process all of the data associated with a second plurality of stages of each image frame. The first and second processing component processes data associated with the first and second plurality of stages, respectively, of a first image frame concurrently.

Abstract: A memory controller component of a memory system stores memory access requests within a transaction queue until serviced so that, over time, the transaction queue alternates between occupied and empty states. The memory controller transitions the memory system to a low power mode in response to detecting the transaction queue is has remained in the empty state for a predetermined time. In the transition to the low power mode, the memory controller disables oscillation of one or more timing signals required to time data signaling operations within synchronous communication circuits of one or more attached memory devices and also disables one or more power consuming circuits within the synchronous communication circuits of the one or more memory devices.

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

Abstract: A system and/or an integrated circuit including a multiplier-accumulator execution pipeline which includes a plurality of MACs to implement a plurality of multiply and accumulate operations. A first memory stores filter weights having a Gaussian floating point (“GFP”) data format and a first bit length. A data format conversion circuitry includes circuitry to convert the filter weights from the GFP data format and the first bit length to filter weights having the data format and bit length that are different from the GFP data format and the first bit length. The converted filter weights are output to the MACs, wherein in operation, the MACs are configured to perform the plurality of multiply operations using (a) the input data and (b) the filter weights having the data format and bit length that are different from the GFP data format and the first bit length, respectively.

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Abstract: The disclosed embodiments relate to a memory system that generates a multiplied timing signal from a reference timing signal. During operation, the system receives a reference timing signal. Next, the system produces a multiplied timing signal from the reference timing signal by generating a burst comprising multiple timing events for each timing event in the reference timing signal, wherein consecutive timing events in each burst of timing events are separated by a bit time. Then, as the reference clock frequency changes, the interval between bursts of timing events changes while the bit time remains substantially constant.

Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.

Abstract: A lateral transfer path within an adjustable-width signaling interface of an integrated circuit component is formed by a chain of logic segments that may be intercoupled in different groups to effect the lateral data transfer required in different interface width configurations, avoiding the need for a dedicated transfer path per width configuration and thereby substantially reducing number of interconnects (and thus the area) required to implement the lateral transfer structure.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory controller is disclosed. The IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. Receiver circuitry receives the first and second read data via a first data link interface and the third and fourth read data via the second data link interface. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio.