Abstract: A memory controller includes logic circuitry to generate a first data address identifying a location in a first external memory array for storing first data, a first tag address identifying a location in a second external memory array for storing a first tag, a second data address identifying a location in the second external memory array for storing second data, and a second tag address identifying a location in the first external memory array for storing a second tag. The memory controller includes an interface that transfers the first data address and the first tag address for a first set of memory operations in the first and the second external memory arrays. The interface transfers the second data address and the second tag address for a second set of memory operations in the first and the second external memory arrays.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

Abstract: The purpose of this invention is to provide a method of constructing a building structure inside and above a swimming pool or, man-made lagoon pool to produce the tropical, exotic resort experience of being surrounded by water in a building. This invention is new because of the use of the invention method of constructing over inside and above a pool or man-made lagoon/body of water pool, instead of an ocean, lake, or other natural body of water. The method of constructing in a pool is the innovation.

Abstract: The present disclosure provides a compound of Formula (I?): or a pharmaceutically acceptable salt, hydrate, solvate, prodrug, stereoisomer, or tautomer thereof, wherein Ra, Rb, Rx, R1, R2, X2, and q are as defined herein, and methods of making and using same.

Abstract: A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N?1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.

Abstract: An automated guided vehicle (AGV) management system including a battery recharge management module, a task management module, and an AGV path planning module is provided. The battery recharge management module manages the AGVs to be recharged by at least one wireless charging unit in a parking area. The AGV leaving the parking area has a battery charge higher than a charge threshold. The task management module receives tasks and assigns the tasks to the AGVs. The task includes information including at least one pick-up location, at least one drop-off location, and a due time. The AGV path planning module plans paths for the AGVs, respectively, according to the information of the assigned tasks. The task management module delays assigning the task to the AGV if the AGV is expected to complete the task earlier than the due time of the task.

Abstract: Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

Abstract: A first serializing stage is provided with a stream of data words composed of sub-words that each have values that associate each of the sub-words with the same error detection code value. For example, the values selected for each sub-word may each be associated with even parity. One or more serializing stages time-multiplex the sub-words into a stream of sub-word sized data. At the serializing stage that receives sub-word sized data stream, the data is checked to determine whether any of the sub-words is no longer associated with the error detection code value. Serializing/deserializing stages are selectively controlled to replace one or more data bits from a word being serialized/deserialized with an error detecting code value (e.g., parity). A subsequent serializing/deserializing stage is enabled to use the inserted error detecting code values and the data in the received words to determine whether an error has occurred.

Abstract: A micro-threaded memory device. A plurality of storage banks are provided, each including a plurality of rows of storage cells and having an access restriction in that at least a minimum access time interval must transpire between successive accesses to a given row of the storage cells. Transfer control circuitry is provided to transfer a first amount of data between the plurality of storage banks and an external signal path in response to a first memory access request, the first amount of data being less than a product of the external signal path bandwidth and the minimum access time interval.

Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: Systems, methods, and processor readable media for distributing digital data and electrical power to a plurality of devices over high-impedance cables are disclosed. Certain embodiments include a gateway device connected to a power source, a first device connected to the gateway device by a cable, the cable being a high-impedance cable having at least two conductive paths, and wherein the first device receives electrical power and digital data from the gateway device via the cable over the same conductive path of the cable, a second device connected to the gateway device by the cable wherein the second device receives power and digital data from the gateway device via the cable over the same conductive path, and wherein the power source provides power to the first and second devices via the cable, and wherein the second device is connected to the gateway device through the first device via a daisy-chain topology.

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

Abstract: An integrated circuit device includes broadcast data paths, a weighting-value memory, multiply-accumulate (MAC) units, and shared shift-out circuitry. The MAC units are coupled in common to each of the broadcast data paths and coupled to receive respective weighting values from the weighting-value memory via respective weighting-value paths. Each of the MAC units includes MAC circuits that each receive an input data value via a respective one of the broadcast data paths and a shared one of the weighting values via a shared one of the respective weighting-value paths; generate a sequence of multiplication products by multiplying the input data value with the shared one of the weighting values; accumulate a sum of the multiplication products; and output the sum of the multiplication products to a respective one of a plurality of serially coupled storage elements within the shared shift-out path.

Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.

Abstract: A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.

Abstract: A hybrid volatile/non-volatile memory module employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). A module controller prioritizes accesses to the DRAM cache for improved speed performance and to minimize programming cycles to the NVM. Data is first written to the DRAM cache where it can be accessed (written to and read from) without the aid of the NVM. Data is only written to the NVM when that data is evicted from the DRAM cache to make room for additional data. Mapping tables relating NVM addresses to physical addresses are distributed throughout the DRAM cache using cache line bits that are not used for data.