Abstract: A voltage generator includes a temperature-dependent voltage generator and a reference voltage node. The temperature-dependent voltage generator generates a voltage that increases with temperature and includes a first transistor stack and a second transistor stack, each of which has a first source/drain terminal and a gate terminal connected to each other at a temperature-dependent voltage generator node. The reference voltage node is connected to the temperature-dependent voltage generator and provides a reference voltage substantially independent of temperature. A method for generating the temperature-independent reference voltage is also disclosed.

Abstract: A bandgap voltage reference circuit is provided. In one example, a cell includes a first device including a first plurality of MOSFETs connected in series The cell further includes a second device including a second plurality of MOSFETs connected in series. The second device connects in series with the first device. The second plurality of MOSFETs has a second Vt that is higher than the first Vt. The cell further includes a reference node connected between the first stack gate device and the second stack gate device.

Abstract: An integrated circuit includes a first FET and a second FET in a first temperature-sensitive device, a third FET in a second temperature-sensitive device, and a fourth FET which has a gate terminal connected to a first terminal of the first FET. The second FET has a first terminal connected to a first current source and has a second terminal connected to the first terminal of the first FET. The third FET has a first terminal connected to a second current source and has a second terminal connected to the first terminal of the first FET. In the integrated circuit, an output terminal is configured to generate a reference voltage which is a summation of a first voltage from the first temperature-sensitive device and a second voltage from the second temperature-sensitive device.

Abstract: A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to generate a pulse signal, and a counter that obtains a number of pulse signals generated by the pulse signal generator, that permits the pulse signal generator to generate a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is less than a predetermined threshold value, and that inhibits the pulse signal generator from generating a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is equal to the predetermined threshold value. A method for monitoring a temperature of the semiconductor device is also disclosed.

Abstract: An integrated circuit includes a first temperature-sensitive device having a first stacked gate device formed and a second stacked gate device, and a second temperature-sensitive device having a third stacked gate device. The first temperature-sensitive device is configured to generate a first voltage which monotonically increases with an absolute temperature. The second temperature-sensitive device is configured to generate a second voltage which monotonically decreases with the absolute temperature. The integrated circuit also includes an output terminal configured to generate a reference voltage which is based on the first voltage from the first temperature-sensitive device and the second voltage from the second temperature-sensitive device. Each of the first stacked gate device, the second stacked gate device, and the third stacked gate device is formed with a first group of field-effect transistors stacked together.

Abstract: A voltage regulator circuit is provided, which includes an input stage, a transconductance compensation stage, a driving stage, and a feedback circuit. The input stage is configured to compare a reference voltage and a feedback voltage to generate a first voltage at a first output terminal of the input stage. The transconductance compensation stage is configured to change an overall transconductance of the input stage in response to a change in the feedback voltage. The driving stage is coupled between the first output terminal and a second output terminal of the voltage regulator circuit, and is configured to provide a driving current to the second output terminal which is coupled to a load. The feedback circuit is coupled to the second output terminal, and is configured to generate the feedback voltage based on an output voltage of the voltage regulator circuit.

Abstract: An integrated circuit is provided, which includes a first voltage source, a second voltage source, a first trimming circuit, and a second trimming circuit. The first voltage source is configured to generate a first voltage which monotonically decreases with an absolute temperature of the integrated circuit. The second voltage source is configured to generate a second voltage which monotonically increases with the absolute temperature. The first and second voltages are compensated to generate a reference voltage. The first trimming circuit includes trimming devices arranged in parallel to the first voltage source, and adjusts the first voltage using the trimming devices to reduce a temperature coefficient of the reference voltage. The second trimming circuit is configured to multiply the reference voltage by a predetermined multiplication ratio to adjust an offset of the reference voltage to generate an output reference voltage at an output terminal of the integrated circuit.

Abstract: An integrated circuit includes a first temperature-sensitive device configured to generate a first voltage, a second temperature-sensitive device configured to generate a second voltage, and an output terminal configured to generate a reference voltage which is a summation of the first voltage and the second voltage. The first voltage monotonically increases with an absolute temperature. The second voltage monotonically decreases with the absolute temperature. In the integrated circuit, a low-dropout regulator has a first input connected to the output terminal and an output connected to the gate of a power regulating transistor. The channel of the power regulating transistor is connected between a first terminal configured to receive a first supply voltage and a second terminal configured to generate a second supply voltage.

Abstract: An integrated circuit includes a first and second temperature-sensitive device, and a trimming circuit. The first temperature-sensitive device is configured to set a first bias current which monotonically increases in accordance with an absolute temperature of the integrated circuit, and to generate a first voltage based on the first bias current. The second temperature-sensitive device is configured to generate a second voltage, and to set a reference voltage at an output terminal of the integrated circuit. The trimming circuit is coupled to the second temperature-sensitive device, and configured to receive a trimming code signal. The second voltage monotonically decreases in accordance with the absolute temperature of the integrated circuit. The reference voltage is equal to a sum of the first voltage and the second voltage.

Abstract: A voltage generator includes a temperature-dependent voltage generator and a reference voltage node. The temperature-dependent voltage generator generates a voltage that increases with temperature and includes a first transistor stack and a second transistor stack, each of which has a first source/drain terminal and a gate terminal connected to each other at a temperature-dependent voltage generator node. The reference voltage node is connected to the temperature-dependent voltage generator and provides a reference voltage substantially independent of temperature. A method for generating the temperature-independent reference voltage is also disclosed.

Abstract: A bandgap voltage reference circuit is provided. In one example, a cell includes a first device including a first plurality of MOSFETs connected in series The cell further includes a second device including a second plurality of MOSFETs connected in series. The second device connects in series with the first device. The second plurality of MOSFETs has a second Vt that is higher than the first Vt. The cell further includes a reference node connected between the first stack gate device and the second stack gate device.

Abstract: An IC includes: a first device including na transistors in series and having a first common gate, and coupled between a first node and ground; a second device including nb transistors in series and having a second common gate, nb?2 and na>nb, the second device coupled between a second node and the ground; a resistor having a terminal coupled to an output node and a terminal coupled to the first node; a first current source coupled between a power and the output node; and a second current source coupled between the power and the second device, wherein: gate terminals of the first and second current sources are commonly connected to the second node and a fourth node between the second current source and the second device, the first common gate connection is coupled to the output node, and the second common gate is coupled to the first node.

Abstract: An integrated circuit includes a first temperature-sensitive device and a second temperature-sensitive device. The first temperature-sensitive device generates a first voltage which monotonically increases with an absolute temperature. The second temperature-sensitive device generates a second voltage which monotonically decreases with the absolute temperature. The second temperature-sensitive device has multiple stacked gate devices connected in parallel. An output terminal is configured to generate a reference voltage which is a summation of the first voltage and the second voltage.

Abstract: A voltage generator includes a temperature-dependent voltage generator and a reference voltage node. The temperature-dependent voltage generator generates a voltage that increases with temperature and includes a first transistor stack and a second transistor stack. Each of the first transistor stack and the second transistor stack has a predetermined number of transistors. The number of the transistors of the second transistor stack is greater than the number of the transistors of the first transistor stack. The reference voltage node is connected to the temperature-dependent voltage generator and provides a reference voltage substantially independent of temperature. A method for generating the temperature-independent reference voltage is also disclosed.

Abstract: A temperature sensor circuit, a control circuit, and a control method are provided. The temperature sensor circuit comprises a temperature sensor and a control circuit. The control circuit is coupled to the temperature sensor and comprises a current source, a sampling circuit, and a computing circuit. The current source is configured to provide a first current and a second current to the temperature sensor in different time periods. The sampling circuit is coupled to the temperature sensor and configured to obtain and store a first voltage information and a second voltage information from the temperature sensor when the first current and second current are respectively provided. The computing circuit is coupled to the sampling circuit and configured to generate a sensing result corresponding to a difference of subtracting the second voltage information from the first voltage information.

Abstract: A temperature sensor circuit, a control circuit, and a control method are provided. The temperature sensor circuit comprises a temperature sensor and a control circuit. The control circuit is coupled to the temperature sensor and comprises a current source, a sampling circuit, and a computing circuit. The current source is configured to provide a first current and a second current to the temperature sensor in different time periods. The sampling circuit is coupled to the temperature sensor and configured to obtain and store a first voltage information and a second voltage information from the temperature sensor when the first current and second current are respectively provided. The computing circuit is coupled to the sampling circuit and configured to generate a sensing result corresponding to a difference of subtracting the second voltage information from the first voltage information.

Abstract: An integrated circuit is provided, which includes a first temperature-sensitive device and a second temperature-sensitive device. The first temperature-sensitive device is configured to generate a first bias current which monotonically increases in accordance with an absolute temperature, and generate a first voltage based on the first bias current. The second temperature-sensitive device is configured to generate a second voltage across the second temperature-sensitive device, and output a reference voltage at an output terminal of the integrated circuit. The second voltage monotonically decreases in accordance with the absolute temperature. The reference voltage equals the first voltage plus the second voltage.

Abstract: An integrated circuit is provided, which includes a first temperature-sensitive device and a second temperature-sensitive device. The first temperature-sensitive device is configured to generate a reference voltage at an output terminal of the integrated circuit. The second temperature-sensitive device is coupled to the output terminal of the integrated circuit through a resistor, and configured to operate in conjunction with the first temperature-sensitive device to generate a first bias current flowing from the output terminal of the integrated circuit to a ground node through the resistor and the first temperature-sensitive device. The first bias current monotonically increases as an absolute temperature of the integrated circuit increases.

Abstract: Systems and methods are provided for a circuit comprising an operating voltage node, a current mirror circuit, and a dynamic element matching (DEM) circuit. The current mirror circuit is coupled to the operating voltage node and comprises a plurality of resistive devices. The current mirror circuit is configured to generate a bias current over the plurality of resistive devices. The DEM circuit comprises a plurality of DEM transistors coupled to the current mirror circuit. The DEM circuit is configured to switch the bias current through one or more of the plurality of DEM transistors. The DEM circuit includes a leakage reduction circuit configured to reduce a gate current of the one or more of the plurality of DEM transistors and is configured to generate a DEM output current based on the bias current and the gate current.

Abstract: A device includes a first resistor, a first switch, a second switch, a comparator and a counter. The first resistor is configured to sense a temperature. The first switch is coupled in series with the first resistor between a first node and a second node. The second switch is coupled in parallel with the first switch. The comparator is coupled between the first node and the second node, and generates a first clock signal when the first switch is turned on, and generates a second clock signal when the second switch is turned on. The counter generates a first digital signal according to the first clock signal, and generates a second digital signal according to the second clock signal. A value of the temperature is calculated at least according to the first digital signal and the second digital signal.