Abstract: A method and a system for qualifying an integrated circuit according to a parasitic supply peak detector that it contains, including: supply of the integrated circuit to be tested under at least a first voltage; checking of a starting of the circuit; application of at least one first noise peak on the circuit power supply, while respecting an amplitude and time gauge; and comparison of average currents consumed by the circuit before and after the peak.

Abstract: An electronic circuit (CE) is provided with an oscillator (OSC—1) outputting a signal (S1) with a frequency (F1) varying as a function of the temperature (Tc) of this circuit, and receiving or outputting a signal (S2) with a fixed and known frequency (F2). This circuit includes a measurement module (MSR) outputting a measurement signal (?1) representative of the variable frequency (F1) evaluated using the fixed frequency signal (S2) used as a reference or standard, and a conversion module (CVRS) applying a transfer function (u?1, v?1, or w?1) that is the inverse of the function for the variation of the frequency of the first signal (S1) as a function of the temperature, to the measurement signal (?1), in order to output a signal (?c) representative of the circuit temperature (Tc).

Abstract: A circuit for detecting noise peaks on the power supply of an electronic circuit, including at least a first transistor having its control terminal connected to a terminal of application of a first potential of a supply voltage of the circuit and having a first conduction terminal connected to a terminal of application of a second potential via at least one first resistive element, the second conduction terminal of the first transistor providing the result of the detection.

Abstract: A device includes a serial port for connecting as a slave to a master device through a serial link. The device further includes a detection circuit for detecting the presence of an impedance of the master device, linked to a terminal of the serial port. The device can be used with microprocessor cards comprising a USB port.

Abstract: An electronic circuit (CE) is provided with an oscillator (OSC—1) outputting a signal (S1) with a frequency (F1) varying as a function of the temperature (Tc) of this circuit, and receiving or outputting a signal (S2) with a fixed and known frequency (F2). This circuit includes a measurement module (MSR) outputting a measurement signal (?1) representative of the variable frequency (F1) evaluated using the fixed frequency signal (S2) used as a reference or standard, and a conversion module (CVRS) applying a transfer function (u?1, v?1, or w?1) that is the inverse of the function for the variation of the frequency of the first signal (S1) as a function of the temperature, to the measurement signal (?1), in order to output a signal (?c) representative of the circuit temperature (Tc).

Abstract: An integrated temperature sensor delivers threshold detection signals when temperature thresholds have been exceeded. The temperature sensor includes a circuit for detecting a first temperature threshold having a first detection threshold, and for detecting a second temperature threshold having a second detection threshold. The circuit also detects a third temperature threshold between the first and second temperature thresholds, and detects a fourth temperature threshold between the first and second temperature thresholds. The third temperature threshold has a third detection threshold linked with the first detection threshold so that a deviation of the first detection threshold causes a corresponding deviation of the third detection threshold. Similarly, the fourth temperature has a fourth detection threshold linked with the second detection threshold so that a deviation of the second detection threshold causes a corresponding deviation of the fourth detection threshold.

Abstract: An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.

Abstract: A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.

Abstract: A current generator for the production of a reference current includes a first P type transistor, a source of which is connected to a first pole of a resistor and a gate of which is connected to a second pole of the resistor. The reference current flows in the resistor with a value that is a function of a threshold voltage of the first transistor. The current generator further includes a second N type transistor whose drain, gate and source are connected respectively to the second pole of the resistor, the first pole of the resistor and the drain of the first resistor. The second transistor is configured to operate in saturation mode.

Abstract: An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.

Abstract: A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.

Abstract: An integrated temperature sensor delivers threshold detection signals when temperature thresholds have been exceeded. The temperature sensor includes a circuit for detecting a first temperature threshold having a first detection threshold, and for detecting a second temperature threshold having a second detection threshold. The circuit also detects a third temperature threshold between the first and second temperature thresholds, and detects a fourth temperature threshold between the first and second temperature thresholds. The third temperature threshold has a third detection threshold linked with the first detection threshold so that a deviation of the first detection threshold causes a corresponding deviation of the third detection threshold. Similarly, the fourth temperature has a fourth detection threshold linked with the second detection threshold so that a deviation of the second detection threshold causes a corresponding deviation of the fourth detection threshold.

Abstract: A current generator for the production of a reference current includes a first P type transistor, a source of which is connected to a first pole of a resistor and a gate of which is connected to a second pole of the resistor. The reference current flows in the resistor with a value that is a function of a threshold voltage of the first transistor. The current generator further includes a second N type transistor whose drain, gate and source are connected respectively to the second pole of the resistor, the first pole of the resistor and the drain of the first resistor. The second transistor is configured to operate in saturation mode.