Abstract: The embodiments of the present disclosure identify a target chip from among multiple chips coupled to a shared bus and customize an optimization parameter for the particular chip. Stated differently, in a communication system where only one chip (or a subset of chips) on a shared bus is the intended target, the system can customize an optimization parameter for the specific location of the target chip on the bus. As new data is received that is intended for a different chip—i.e., the target chip changes—the system can dynamically change the parameter based on the location of the new target chip on the bus.

Abstract: The embodiments of the present disclosure identify a target chip from among multiple chips coupled to a shared bus and customize an optimization parameter for the particular chip. Stated differently, in a communication system where only one chip (or a subset of chips) on a shared bus is the intended target, the system can customize an optimization parameter for the specific location of the target chip on the bus. As new data is received that is intended for a different chip—i.e., the target chip changes—the system can dynamically change the parameter based on the location of the new target chip on the bus.

Abstract: The embodiments of the present disclosure identify a target chip from among multiple chips coupled to a shared bus and customize an optimization parameter for the particular chip. Stated differently, in a communication system where only one chip (or a subset of chips) on a shared bus is the intended target, the system can customize an optimization parameter for the specific location of the target chip on the bus. As new data is received that is intended for a different chip—i.e., the target chip changes—the system can dynamically change the parameter based on the location of the new target chip on the bus.

Abstract: The embodiments of the present disclosure identify a target chip from among multiple chips coupled to a shared bus and customize an optimization parameter for the particular chip. Stated differently, in a communication system where only one chip (or a subset of chips) on a shared bus is the intended target, the system can customize an optimization parameter for the specific location of the target chip on the bus. As new data is received that is intended for a different chip—i.e., the target chip changes—the system can dynamically change the parameter based on the location of the new target chip on the bus.

Abstract: Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.

Abstract: Systems and methods to set a voltage value associated with a communication bus that includes memory controller coupled to a memory device are disclosed. A particular method may include performing a first calibration operation associated with first data written from a memory controller to a memory device. A second calibration operation may be associated with second data read at the memory controller from the memory device. The operating parameter may be set based on a result of at least one of the first and the second calibration operations at the memory device or the memory controller.

Abstract: A semiconductor wafer comprises a first chip and a second chip, each chip comprising a core, link layer and physical layer. A kerf area physically connects the two chips on the wafer, and a kerf area interconnect selectively couples the link layers of the two chips while the two physical layers are disabled.

Abstract: A method for calibrating resistors on an integrated circuit chip via a daisy chain scheme. The method comprises the step of configuring one or more links of the daisy chain scheme, wherein each of the one or more links comprises one or more master resistors and one or more slave resistors. The method further comprises the steps of calibrating at least one on-chip reference resistor, the one or more master resistors, and the one or more slave resistors via the daisy chain scheme. The method using the daisy chain scheme enables resistance of at least one off-chip reference resistor to be duplicated to multiple distant locations while maintaining a low mismatch error.

Abstract: A method, system and computer program product for preventing execution of pirated software. A file is loaded on an end user's computer containing a binary image that is generated by removing one or more code bits from an executable code. A request is sent to a remote server to return a software key required for execution of the executable code from the binary image. The software key is downloaded to the end user's computer on which the binary image is loaded. One or more bits from the software key is inserted into the appropriate location of the binary image to regenerate the executable code. The executable code is enabled for execution on the end user's computer only following the embedding of the one or more bits.

Abstract: A structure and method for fabricating a light emitting diode and a light detecting diode on a silicon-on-insulator (SOI) wafer is provided. Specifically, the structure and method involves forming a light emitting diode and light detecting diode on the SOI wafer's backside and utilizing a deep trench formed in the wafer as an alignment marker. The alignment marker can be detected by x-ray diffraction, reflectivity, or diffraction grating techniques. Moreover, the alignment marker can be utilized to pattern openings and perform ion implantation to create p-n junctions for the light emitting diode and light detecting diode. By utilizing the SOI wafer's backside, the structure and method increases the number of light emitting diodes and light detecting diodes that can be formed on a SOI wafer, enables an increase in overall device density for an integrated circuit, and reduces attenuation of light signals being emitted and detected by the diodes.

Abstract: A structure and method for fabricating a light emitting diode and a light detecting diode on a silicon-on-insulator (SOI) wafer is provided. Specifically, the structure and method involves forming a light emitting diode and light detecting diode on the SOI wafer's backside and utilizing a deep trench formed in the wafer as an alignment marker. The alignment marker can be detected by x-ray diffraction, reflectivity, or diffraction grating techniques. Moreover, the alignment marker can be utilized to pattern openings and perform ion implantation to create p-n junctions for the light emitting diode and light detecting diode. By utilizing the SOI wafer's backside, the structure and method increases the number of light emitting diodes and light detecting diodes that can be formed on a SOI wafer, enables an increase in overall device density for an integrated circuit, and reduces attenuation of light signals being emitted and detected by the diodes.

Abstract: Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.

Abstract: Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction minor arrays on the substrate, each diffraction minor array of the set of at least three diffraction minor arrays comprising a single row of minors, all mirrors in any particular diffraction minor array spaced apart a same distance, minors in different diffraction minor arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

Abstract: A DRAM and memory controller are coupled during driver training to reduce mismatches. The impedances of the system are controlled through a termination at the controller to yield improvements in timing margins. The coupling of the components on a shared electrical bus through adjustment of the termination values during training removes known offset issues.

Abstract: A memory device is connected through an interface to a memory controller. The controller's reference voltage is set based on a driver's impendence of the memory device during driver training. The voltage is applied to a reference resistor pair at the controller and changed until the voltage level switches. The voltage is then set at the reference resistor pair of the controller.

Abstract: Systems and methods to set a voltage value associated with a communication bus that includes memory controller coupled to a memory device are disclosed. A particular method may include performing a first calibration operation associated with first data written from a memory controller to a memory device. A second calibration operation may be associated with second data read at the memory controller from the memory device. The operating parameter may be set based on a result of at least one of the first and the second calibration operations at the memory device or the memory controller.

Abstract: Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.

Abstract: A semiconductor wafer comprises a first chip and a second chip, each chip comprising a core, link layer and physical layer. A kerf area physically connects the two chips on the wafer, and a kerf area interconnect selectively couples the link layers of the two chips while the two physical layers are disabled.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction minor arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.