Patents by Inventor Benjamin Riordon

Benjamin Riordon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120183199
    Abstract: A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
    Type: Application
    Filed: January 14, 2011
    Publication date: July 19, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin Riordon, Russell Low
  • Patent number: 8216923
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: July 10, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas Bateman, Kevin Daniels, Atul Gupta, Russell Low, Benjamin Riordon, Robert Mitchell, Steven Anella
  • Publication number: 20120083102
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas Bateman, Kevin Daniels, Atul Gupta, Russell Low, Benjamin Riordon, Robert Mitchell, Steven Anella
  • Publication number: 20120064661
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created, and imaging is used to determine the appropriate metallization layer.
    Type: Application
    Filed: November 18, 2011
    Publication date: March 15, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin Riordon, Russel Low, Atul Gupta, William Weaver
  • Publication number: 20120064662
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
    Type: Application
    Filed: November 18, 2011
    Publication date: March 15, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventor: Benjamin Riordon
  • Publication number: 20110320030
    Abstract: An improved method of processing substrates, such as to create solar cells, is disclosed. The use of shadow masks may cause alignment errors associated with the differing thermal expansion characteristics of the shadow mask and the substrate. To counteract this error, mechanisms are used to insure that the thermal expansion of the shadow mask and the substrate are equal or substantially equal. In some embodiments, the shadow mask is produced with a type and quantity of material so that its thermal expansion matches that of the substrate. In other embodiments, heating and cooling mechanisms are applied to the shadow mask so that its thermal expansion matches that of the substrate. In other embodiments, heating and cooling mechanisms are applied to the substrate so that its thermal expansion matches that of the shadow mask. Furthermore, both the mask and substrate can be heated and/or cooled simultaneously.
    Type: Application
    Filed: June 25, 2010
    Publication date: December 29, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin Riordon, Steven Anella
  • Patent number: 8084293
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: December 27, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin Riordon, Russell Low, Atul Gupta, William Weaver
  • Publication number: 20110244625
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
    Type: Application
    Filed: April 6, 2010
    Publication date: October 6, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin Riordon, Russell Low, Atul Gupta, William Weaver
  • Publication number: 20090242046
    Abstract: A system for pressurizing and exhausting a vented chamber is disclosed. The present disclosure includes a unitary module having two integrated valves for each supported chamber, a single inlet port for each chamber, a single vent exhaust port and a single pressurized port. In addition, a number of pressure gauge ports are provided to allow the pressure at various points to be monitored. In addition, the unitary module optionally includes a leak check port. Using this port, the operator can test the integrity of all valves within the module.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Inventor: Benjamin Riordon
  • Publication number: 20070081880
    Abstract: The invention provides a wafer-handling method, system, and apparatus. In one embodiment, the invention provides a wafer-handling apparatus comprising: a clamping surface for securing a wafer; and a load lock sealing surface for forming an airtight seal with a load lock wall.
    Type: Application
    Filed: September 29, 2005
    Publication date: April 12, 2007
    Inventors: Benjamin Riordon, Lawrence Ficarra, James Buonodono
  • Publication number: 20050121627
    Abstract: An ion implantation apparatus is provided for workpiece handling. The apparatus includes a plurality of scan systems for scanning workpieces in an ion implanting beam, a plurality of exchangers for moving the workpieces to and from the scan systems, and a system controller for positioning one of the workpieces for scanning in the ion implanting beam by one of the scan systems, sensing completion of the ion beam scanning for the one workpiece and simultaneously positioning another of the workpieces for scanning in the ion implanting beam by another of the scan systems so that the workpieces are continuously presented to the ion implanting beam. The apparatus provides continuous implantation relative to the beam, thus enabling wafer exchange to occur in parallel with the implantation process. As a result, significant system productivity improvement and wafer throughput will be realized.
    Type: Application
    Filed: December 8, 2004
    Publication date: June 9, 2005
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alan Sheng, Benjamin Riordon, Lawrence Ficarra