Abstract: A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.

Abstract: A method for selective deposition of semiconductor materials in semiconductor processing is disclosed. In some embodiments, the method includes providing a patterned substrate comprising a first region and a second region, where the first region comprises an exposed first semiconductor material and the second region comprise an exposed insulator material. The method further includes selectively providing a film of the second semiconductor material on the first semiconductor material of the first region by providing a precursor of a second semiconductor material, a carrier gas that is not reactive with chlorine compounds, and tin-tetrachloride (SnCl4). The tin-tetrachloride inhibits the deposition of the second semiconductor material on the insulator material of the second region.

Abstract: The present disclosure is related to a method for the deposition of a continuous layer of germanium on a substrate by chemical vapor deposition. According to the disclosure, a mixture of a non-reactive carrier gas and a higher order germanium precursor gas, i.e. of higher order than germane (GeH4), is applied. In an example embodiment, the deposition is done under application of a deposition temperature between 275° C. and 500° C., with the partial pressure of the precursor gas within the mixture being at least 20 mTorr for temperatures between 275° C. and 285° C., and at least 10 mTorr for temperatures between 285° and 500° C.

Abstract: A system and method for providing mixed-initiative curation of information within a shared repository is provided. Static content is retrieved from a shared storage associated with a shared information management client. Dynamic content including one or more information items satisfying a similarity threshold with the static content is identified as similar dynamic content. An interactive visualization is generated within the shared information management client from information extracted from the static content and the similar dynamic content. The interactive visualization of the information is linked with the static content and the similar dynamic content. A selection of the information of the similar dynamic content is received from within the visualization. The static content in the shared storage is updated with the similar dynamic content linked with the selected information.

Abstract: A system and method for supporting targeted sharing and early curation of information is provided. A digital data item selection by a user within a personal information management client is identified. One or more documents in a shared information repository similar to the digital data item are recommended including selecting recommendation criteria. The recommendation criteria are applied to the digital data item and the one or more documents. The one or more documents satisfying the recommendation criteria are identified as the similar documents. The similar documents are displayed visually proximate to the digital data item in the personal information client. A selection of one of the similar documents is received and the selected similar document in the shared information repository is updated with the digital data item.

Abstract: A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGex layer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si1-xGex layer. The resulting stack of silicon, Si1-xGex and silicon oxide layers is etched up to the buried insulating layer leaving an island of the stack, or up to the superficial layer leaving a zone of silicon and an island of the stack. A mask is formed to protect against oxidation on the etched structure, wherein the protective mask only leaves visible the silicon oxide layer of the island. The germanium of the Si1-xGex layer is condensed on the island to obtain an island comprising a layer that is enriched in germanium, or even a layer of germanium, on the insulating layer, with a silicon oxide layer on top of it.

Abstract: A three-dimensional CMOS circuit having at least a first N-conductivity field-effect transistor and a second P-conductivity field-effect transistor respectively formed on first and second crystalline substrates. The first field-effect transistor is oriented, in the first substrate, with a first secondary crystallographic orientation. The second field-effect transistor is oriented, in the second substrate, with a second secondary crystallographic orientation. The orientations of the first and second transistors form a different angle from the angle formed, in one of the substrates, by the first and second secondary crystallographic directions. The first and second substrates are assembled vertically.

Abstract: A method for the realization of a microelectronic device which includes at least one semi-conductor zone which rests on a support and which exhibits a Germanium concentration gradient in a direction parallel to the principal plane of the support, where the method involves steps for: a) The formation, on a support, of at least one oxidation masking layer which includes one or more holes, where the holes reveal at least one first semi-conductor zone which includes inclined flanks and which is based on Si, b) The formation of at least one second semi-conductor zone based on Si1-xGex (where 0<x) on said first semi-conductor zone based on Si, c) Thermal oxidation of said first semi-conductor zone and of the second semi-conductor zone through said masking layer.

Abstract: The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer.

Abstract: A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.

Abstract: The invention relates to a manufacturing method of a semi-conductor on insulator substrate from an SOI substrate comprising a surface layer of silicon on an electrically insulating layer, called buried insulating layer, wherein a layer of Si1-xGex is formed on the superficial layer of silicon.