Abstract: A bench for mechanical characterisation of a battery cell by applying a compression force includes a frame having a first compression plate, a movable element having a second compression plate opposite the first compression plate, a compression spring for applying a compression force to the cell between the first and second compression plates, a force sensor inserted between the movable element and the spring, and movement sensors measuring the movement between the first and second compression plates. The first compression plate includes a projecting compression zone with an area equal to a portion of interest of the cell and the frame includes a recess surrounding a thicker frame in the frame forming a pedestal supporting the first compression plate.

Abstract: A bench for mechanically characterising a battery cell by applying a compressive force includes a frame carrying a bottom compression assembly and a top compression assembly, means for applying a compressive force to the cell between the compression assemblies, and a force sensor. Each compression assembly includes a compression part and a mounting surrounding the compression part. The compression part and the mounting are at least partly mechanically dissociated. The mounting of the top compression assembly carries movement sensors that measure the movement between the two mountings.

Abstract: A supply system for supplying a rocket engine with at least one propellant, the supply system comprising at least one supply circuit able to circulate the propellant, and at least one reservoir in fluid communication with the supply circuit via at least one communication pipe, so that a fluid contained in the reservoir can flow from the latter up to the supply circuit, and vice versa, via said at least one communication pipe, the reservoir being able to contain a volume of gas, and heating means able to vary the volume of gas in the reservoir, the heating means being configured to vaporize the propellant in the reservoir.

Abstract: A pogo effect corrector system for a liquid propellant feed system of a rocket engine includes a liquid propellant feed pipe portion, and a hydraulic accumulator including a tank connected firstly to the feed pipe portion firstly via at least one take-off passage opening out into a take-off segment of the feed pipe portion, and secondly via at least one rejection passage opening out into the tank at an intermediate level lying between the at least one take-off passage and the top of the tank, wherein the feed pipe portion possesses a constriction segment where the flow section of the feed pipeline portion is less than the flow section of the take-off segment, and wherein at least one rejection passage opens out into the feed pipeline portion in the constriction segment.

Abstract: A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, Tglass transition, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature Tepitaxy, such that Tepitaxy?k1×Tglass transition, with k1 being 0.8.

Abstract: A pogo effect corrector system for a liquid propellant feed system of a rocket engine includes a liquid propellant feed pipe portion, and a hydraulic accumulator including a tank connected firstly to the feed pipe portion firstly via at least one take-off passage opening out into a take-off segment of the feed pipe portion, and secondly via at least one rejection passage opening out into the tank at an intermediate level lying between the at least one take-off passage and the top of the tank, wherein the feed pipe portion possesses a constriction segment where the flow section of the feed pipeline portion is less than the flow section of the take-off segment, and wherein at least one rejection passage opens out into the feed pipeline portion in the constriction segment.

Abstract: A supply system for supplying a rocket engine with at least one propellant, the supply system comprising at least one supply circuit able to circulate the propellant, and at least one reservoir in fluid communication with the supply circuit via at least one communication pipe, so that a fluid contained in the reservoir can flow from the latter up to the supply circuit, and vice versa, via said at least one communication pipe, the reservoir being able to contain a volume of gas, and heating means able to vary the volume of gas in the reservoir, the heating means being configured to vaporize the propellant in the reservoir.

Abstract: Method for producing a device provided with FinFET transistors, comprising the following steps: a) making amorphous and doping a first portion of a semiconductor in via a tilted beam oriented toward a first lateral face of the fin, while retaining a first crystalline semiconductor block against a second lateral face of the fin, then b) carrying out at least one recrystallization annealing of said first portion, then c) making amorphous and doping a second portion via a tilted beam oriented toward the second lateral face of the fin, while retaining a second crystalline semiconductor block against said first lateral face of the fin, then d) carrying out at least one recrystallization annealing of the second portion.

Abstract: Some embodiments of the invention provide a method of determining a material characteristic of material in a sample by iterative tomographic reconstruction. The method conducts one or more X-ray tomography scans of a sample, and then determines one or more estimated material characteristics, such as atomic number and density, for multiple volume elements in the sample using a tomographic reconstruction algorithm. These estimated material characteristics are then modified by reference to stored known material characteristic data. Preferably, determining the composition of the sample volume during reconstruction includes segmenting the sample into regions of common composition, the segmenting being performed during iterative reconstruction instead of being based on the voxel characteristics determined upon the completion of iterative reconstruction.

Abstract: Method for producing a device provided with FinFET transistors, comprising the following steps: a) making amorphous and doping a first portion of a semiconductor in via a tilted beam oriented toward a first lateral face of the fin, while retaining a first crystalline semiconductor block against a second lateral face of the fin, then b) carrying out at least one recrystallization annealing of said first portion, then c) making amorphous and doping a second portion via a tilted beam oriented toward the second lateral face of the fin, while retaining a second crystalline semiconductor block against said first lateral face of the fin, then d) carrying out at least one recrystallization annealing of the second portion.

Abstract: A method of straining a transistor channel zone is provided, including a) forming a plurality of stress blocks based on a material having an intrinsic stress, around a zone based on a semiconducting material in which a transistor channel will be made and on which a transistor gate will be formed, the stress blocks inducing a stress in the zone; b) forming a gate block on the zone, the gate block being disposed between the stress blocks; and c) at least partially removing the stress blocks without removing the gate block, wherein the gate block has a Young's modulus and a thickness such that the stress blocks are at least partially removed in step c) and the induced stress is at least partially maintained in the zone after the stress blocks are at least partially removed.

Abstract: Method for fabricating transistors for an integrated 3D circuit, comprising: a) forming, on a given level of transistors made in a first semiconductor layer: a stack comprising a first region of a second semiconductor zone suitable for an N-type transistor channel and a second region of the second semiconductor zone suitable for a P-type transistor channel of a higher level, the stack moreover comprising a ground plane continuous layer (40), as well as an insulating layer between the ground plane and the second semiconductor layer, then b) exposing source and drain zones of the circuit to a laser (L), so as to carry out at least one thermal activation annealing, where the exposed source and drain zones are located next to an upper surface of the ground plane continuous layer, where the ground plane continuous layer is configured so as to protect at least a part of the circuit located on the side of a lower face of the ground plane continuous layer from the laser, then c) carrying out cutting up of the grou

Abstract: The present invention relates to tetrahydroisoquinoline derivatives according to formula (I), which are Positive Allosteric Modulators of D1 and accordingly of benefit as pharmaceutical agents for the treatment of diseases in which D1 receptors play a role.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants.

Abstract: Method for fabricating transistors for an integrated 3D circuit, comprising: a) forming, on a given level of transistors made in a first semiconductor layer: a stack comprising a first region of a second semiconductor zone suitable for an N-type transistor channel and a second region of the second semiconductor zone suitable for a P-type transistor channel of a higher level, the stack moreover comprising a ground plane continuous layer (40), as well as an insulating layer between the ground plane and the second semiconductor layer, then b) exposing source and drain zones of the circuit to a laser (L), so as to carry out at least one thermal activation annealing, where the exposed source and drain zones are located next to an upper surface of the ground plane continuous layer, where the ground plane continuous layer is configured so as to protect at least a part of the circuit located on the side of a lower face of the ground plane continuous layer from the laser, then c) carrying out cutting up of the grou

Abstract: The present invention relates to isoindoline derivatives according to formula (I), which are Positive Allosteric Modulators of D1 and accordingly of benefit as pharmaceutical agents for the treatment of diseases in which D1 receptors play a role.

Abstract: Some embodiments of the invention provide a method of determining a material characteristic of material in a sample by iterative tomographic reconstruction. The method conducts one or more X-ray tomography scans of a sample, and then determines one or more estimated material characteristics, such as atomic number and density, for multiple volume elements in the sample using a tomographic reconstruction algorithm. These estimated material characteristics are then modified by reference to stored known material characteristic data. Preferably, determining the composition of the sample volume during reconstruction includes segmenting the sample into regions of common composition, the segmenting being performed during iterative reconstruction instead of being based on the voxel characteristics determined upon the completion of iterative reconstruction.

Abstract: A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants.

Abstract: The present invention relates to isoindoline derivatives according to formula (I), which are Positive Allosteric Modulators of D1 and accordingly of benefit as pharmaceutical agents for the treatment of diseases in which D1 receptors play a role.