Abstract: A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants.

Abstract: The present invention relates to isoindoline derivatives according to formula (I), which are Positive Allosteric Modulators of D1 and accordingly of benefit as pharmaceutical agents for the treatment of diseases in which D1 receptors play a role.

Abstract: The present invention relates to tetrahydroisoquinoline derivatives according to formula (I), which are Positive Allosteric Modulators of D1 and accordingly of benefit as pharmaceutical agents for the treatment of diseases in which D1 receptors play a role.

Abstract: This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part.

Abstract: This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part.

Abstract: A Method for modifying the strain state of a semiconducting structure, comprising steps to: a) provide at least one first semiconducting structure on a substrate, formed from a semiconducting stack comprising an alternation of elements based on the first semiconducting material and elements based on the second semiconducting material, then b) remove portions of the second semiconducting material from the first structure so as to form empty spaces, c) fill in the empty spaces with a dielectric material, d) form a straining zone on the first structure, based on a first strained material, e) perform appropriate thermal annealing so as to make the dielectric material creep or relax, and cause a change in the strain state of elements based on the first semiconducting material in the structure.

Abstract: Method of straining a transistor channel zone comprising the following steps: a) formation of stress blocks (30b, 30c) arranged so as to induce a given stress in a semiconducting zone (12a), b) form a gate stack on this semiconducting zone (12a) comprising a dielectric material with a high Young's modulus deposited on and in contact with the semiconducting material, c) at least partially remove the stress block(s).

Abstract: The present invention relates to compounds of formula (1) and salts, stereoisomeric forms, racemic mixtures, prodrugs, esters and metabolites thereof. R1 is a glycosyl moiety, hydroxyl-protected acetate derivatives thereof or amino derivatives thereof; R2, R3 and R4 are, each independently, selected from hydrogen, C1-6alkyl, C2-20alkenyl, C6-20arylalkyl, C3-7cycloalkyl, C3-7cycloalkylC1-6alkyl, C6-20aryl aralkyl, akylcarbonyloxy, arylcarbonyloxy, alkyloxy, alklylthio, alkylamino, alkyloxyalkyl, alkanoyl, alkylcarbonylalkyl, optionally substituted by one or more substituents independently selected from alkyl, aralkyl, aryl, cycloalkyl, alkyloxycarbonyl, carboxyl, aminocarbonyl, hydroxy, cyano, halogen or amino optionally mono- or disubstituted wherein the substituents are independently selected from alkyl, aryl, aralkyl, aryloxy, arylamino, aryloxyalkyl, arylaminoalkyl, aralkoxy, and alkoxy.