Abstract: Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate.

Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

Abstract: A mobile terminal and multimedia contents controlling method thereof are disclosed, by which a contents list configured according to a selection made by a user is generated and by which the generated contents list is operable as a broadcast organization list of a user customized channel. The present invention includes being provided with relevant information on the multimedia contents, enabling at least one multimedia content to be selected using the provided relevant information, generating a contents list including the selected at least one multimedia content, receiving a random one of the at least one multimedia content included in the generated contents list at a specific timing point, and performing at least one of a playback operation and a storage operation of the received multimedia content.

Abstract: A mobile terminal and broadcast controlling method thereof are disclosed. The present invention includes receiving a broadcast control information on a broadcast content from an external terminal, identifying the broadcast content corresponding to the received broadcast control information using a broadcast relevant information, setting the received broadcast control information on the identified broadcast content, and controlling an output operation of the identified broadcast content according to the set broadcast control information.

Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.

Abstract: Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.

Abstract: A thin film conductor having improved adhesion and superior conductivity, a method for fabricating the same, a thin film transistor (TFT) plate including the thin film conductor, and a method for fabricating the TFT plate are provided. The thin film conductor includes an adhesive layer containing an oxidation-reactive metal or silicidation-reactive metal and silver, a silver conductive layer formed on the adhesive layer, and a protection layer formed on the silver conductive layer and containing an oxidation-reactive metal and silver.

Abstract: The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.

Abstract: A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current (“Ion”) for turning on the TFT and increasing the off-current (“Ioff”) for turning off the TFT due to the oxidation-blocking layer.

Abstract: Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

Abstract: The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: A mobile terminal and method of controlling a broadcast therein are provided by which a broadcast signal can be received and outputted in a manner of setting a frequency band corresponding to a visited country in case of international roaming of the mobile terminal. A memory may store per-country broadcast relevant information and a controller may search the memory for broadcast relevant information corresponding to a visited country in case of detecting international migration. The controller may set the searched broadcast relevant information when the search for the broadcast relevant information corresponding to the visited country is successful.

Abstract: Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer disposed on a lower structure, a copper conductive layer comprising copper or copper alloy disposed on the barrier layer, an intermediate layer comprising copper nitride disposed on the copper conductive layer, and a capping layer disposed on the intermediate layer.

Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: A mobile terminal includes a wireless communication unit configured to search for at least one broadcast service provider based upon frequencies assigned to the at least one broadcast service provider and a controller configured to automatically select a first broadcast service provider from the at least one broadcast service provider and to output broadcast content provided by the selected first broadcast service provider.

Abstract: A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr.

Abstract: A mobile terminal including a user input unit configured to select a first broadcast channel, and a controller configured to buffer broadcast data relevant to at least one second broadcast channel different than the first broadcast channel for a predetermined time if the first broadcast channel is selected and to stop buffering the broadcast data relevant to the at least one second broadcast channel when the predetermined time expires.

Abstract: Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer disposed on a lower structure, a copper conductive layer comprising copper or copper alloy disposed on the barrier layer, an intermediate layer comprising copper nitride disposed on the copper conductive layer, and a capping layer disposed on the intermediate layer.

Abstract: Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.