Abstract: Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer. Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.

Abstract: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

Abstract: The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

Abstract: A mobile terminal and a method for controlling a broadcast displays information on an interactive service associated with a broadcast program, the information provided prior to displaying the associated broadcast program. The present invention includes a wireless communication unit receiving interactive service information, an input unit selecting an interactive service using the received interactive service information, and a controller scheduling the execution of the selected interactive service.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.

Abstract: A mobile terminal including an input unit configured to enter a broadcast mode so as to display a broadcast program on a first broadcast channel, a buffering unit configured to buffer a broadcast program on a second broadcast channel different than the first broadcast channel, and a display unit configured to display the buffered broadcast program on the second broadcast channel when a channel change command is entered on the input unit for changing the first broadcast channel to the second broadcast channel.

Abstract: A method for controlling viewing a broadcast in a terminal. A terminal having a broadcast control function includes a first replaceable identity device attached to a portion of the terminal and a controller for setting a broadcast viewing level when a second identity device replaces the first identity device, wherein the broadcast viewing level was previously set by the first identity device.

Abstract: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

Abstract: Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

Abstract: A terminal, a computer program product and a method of providing broadcasts thereto by which a single SIM card call receive broadcasts provided by a plurality of broadcast providers in a manner of deactivating a function of receiving broadcasts provided by a first broadcast provider. A function of only receiving a broadcast provided by a first broadcast provider is deactivated, broadcasts of a plurality of broadcast providers in a current area are searched, and information for the searched broadcasts are displayed.

Abstract: A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr.

Abstract: The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

Abstract: A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire include triple layers of an adhesion layer, a Ag containing layer and a protection layer. The adhesion layer includes one of Cr, Cr alloy, Ti, Ti alloy, Mo, Mo alloy, Ta and Ta alloy, the Ag containing layer includes Ag or Ag alloy, and the protection layer includes one of IZO, Mo, Mo alloy, Cr and Cr alloy.

Abstract: The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.

Abstract: A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr.

Abstract: The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.

Abstract: The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

Abstract: There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TET substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 ? to about 5,000 ?. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.

Abstract: A multi-layer wiring for use with thin film transistors (TFTs), methods of manufacturing the multi-layer wiring, and TFTs employing the multi-layer wiring are provided. In one embodiment, the multi-layer wiring includes a main wiring and a sub-wiring on the main wiring. The main wiring includes a first metal and the sub-wiring includes an alloy wherein a majority of the alloy is the first metal. The multi-layer wiring can exhibit decreased electrical resistance and a reduced tendency to develop malfunctions such as hillocks or spiking. The multi-layer wiring can also exhibit improved contact characteristics with other conductive elements of TFT display devices.

Abstract: There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 ? to about 5,000 ?. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.